Method and ink for etching amorphous silicon solar battery aluminum membrana

A technology for solar cells and amorphous silicon thin films, applied in circuits, electrical components, climate sustainability, etc., can solve the problems of unsuitability for large-scale production, low production efficiency, and many etching processes, and achieve the benefits of large-scale continuous The effect of optimizing production, improving production efficiency and reducing production cost

Inactive Publication Date: 2008-10-01
李毅
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The applicant's method of etching the aluminum film of an amorphous silicon solar cell in the early stage is to etch with ferric chloride-copper sulfate ink (patent applied for, application number: 200610156980.X). This etching ink and its etching method can Effectively etch the aluminum film of solar cells and form various complex patterns; however, the residues of copper and iron metal conductive substances produced after etching by this method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and ink for etching amorphous silicon solar battery aluminum membrana
  • Method and ink for etching amorphous silicon solar battery aluminum membrana
  • Method and ink for etching amorphous silicon solar battery aluminum membrana

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] image 3 It is the schematic diagram of this embodiment, and the specification is 70mm×70mm solar cells. in SnO 2 On the conductive glass, use a laser to scribe the transparent conductive film to form an electrode pattern, and use an automatic continuous cleaning machine to clean the transparent conductive glass with the electrode pattern formed. Put the cleaned transparent conductive glass into a special fixture, send it into an oven, and preheat it at a temperature of 250°C, and place it on the SnO 2 An amorphous silicon thin film layer is deposited on the conductive film. Use laser to scribe amorphous silicon to form amorphous silicon thin film battery pattern. On the amorphous silicon thin film layer, an aluminum back electrode layer is prepared by vacuum evaporation, and an aluminum back electrode pattern is formed through a mask frame. After aluminum plating, the UV-ink made of polymer materials is used to screen-print the back paint protection layer. After be...

Embodiment 2

[0027] The manufacturing process of the cell sheet with a size of 50mm×50mm is the same as Example 1, the difference is the preparation of alkaline etching ink. Take 1790 grams of water, add 190 grams of KOH, stir to dissolve, add 155 grams of WT-115 thickener, stir to thicken, add 11 grams of water-based defoamer W-090 and 36 grams of water-based leveling agent Leaslip455, and stir Evenly, alkaline etching ink is prepared.

Embodiment 3

[0029] The manufacturing process of the cell sheet with a size of 70mm×70mm is the same as Example 1, the difference is the preparation of alkaline etching ink. Take 1790 grams of water, add 100 grams of NaOH, stir to dissolve, add 150 grams of WT-115 thickener, stir to thicken, add 11 grams of water-based defoamer W-090 and 36 grams of water-based leveling agent Leaslip455, and stir Evenly, alkaline etching ink is prepared.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an etching ink and a method for etching amorphous silicon solar energy battery aluminum film, alkaline etching slurry is used to silk-screen and etch isolation trough for preventing short circuit on the back electrode aluminum film around the amorphous silicon unit battery, the alkaline etching slurry is an ink which is silk-screened on the aluminum film electrode, the proportions of raw materials are that: alkali: 2.7-0.1% (W/W), water, 81-86% (W/W), thickening agent: 5.4-7.3% (W/W), water defoaming agent: 0.3-0.7and (W/W), water flow agent: 1.5-1.8% (W/W). Manufacturing the solar energy battery by adopting the method provided by the invention not only can efficiently prevent circumference of the unit battery from the short circuit, but also has low cost, convenience for cleaning after etching, thus improving production efficiency and being beneficial to large-scale continuous production.

Description

technical field [0001] The invention relates to an etching technology for an aluminum film of an amorphous silicon solar cell, which is an etchant and an etching method for producing an amorphous silicon solar cell and an aluminum back electrode pattern. Background technique [0002] The structure of amorphous silicon solar cells is to deposit a layer of SnO on a glass plate 2 (or ITO) conductive film, a layer of amorphous silicon is deposited on the conductive film by chemical vapor deposition, and a back electrode aluminum film is deposited on the amorphous silicon. The applicant's method of etching the aluminum film of an amorphous silicon solar cell in the early stage is to etch with ferric chloride-copper sulfate ink (patent applied for, application number: 200610156980.X). This etching ink and its etching method can Effectively etch the aluminum film of solar cells and form various complex patterns; however, the residues of copper and iron metal conductive substances ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/84H01L21/3213H01L31/20C23F1/36
CPCY02P70/50
Inventor 李毅熊正根
Owner 李毅
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap