Method and ink for etching amorphous silicon solar battery aluminum membrana

Abstract

The invention relates to an etching ink and a method for etching amorphous silicon solar energy battery aluminum film, alkaline etching slurry is used to silk-screen and etch isolation trough for preventing short circuit on the back electrode aluminum film around the amorphous silicon unit battery, the alkaline etching slurry is an ink which is silk-screened on the aluminum film electrode, the proportions of raw materials are that: alkali: 2.7-0.1% (W / W), water, 81-86% (W / W), thickening agent: 5.4-7.3% (W / W), water defoaming agent: 0.3-0.7and (W / W), water flow agent: 1.5-1.8% (W / W). Manufacturing the solar energy battery by adopting the method provided by the invention not only can efficiently prevent circumference of the unit battery from the short circuit, but also has low cost, convenience for cleaning after etching, thus improving production efficiency and being beneficial to large-scale continuous production.

Description

technical field [0001] The invention relates to an etching technology for an aluminum film of an amorphous silicon solar cell, which is an etchant and an etching method for producing an amorphous silicon solar cell and an aluminum back electrode pattern. Background technique [0002] The structure of amorphous silicon solar cells is to deposit a layer of SnO on a glass plate 2 (or ITO) conductive film, a layer of amorphous silicon is deposited on the conductive film by chemical vapor deposition, and a back electrode aluminum film is deposited on the amorphous silicon. The applicant's method of etching the aluminum film of an amorphous silicon solar cell in the early stage is to etch with ferric chloride-copper sulfate ink (patent applied for, application number: 200610156980.X). This etching ink and its etching method can Effectively etch the aluminum film of solar cells and form various complex patterns; however, the residues of copper and iron metal conductive substances ...

AI Technical Summary

Problems solved by technology

The applicant's method of etching the aluminum film of an amorphous silicon solar cell in the early stage is to etch with ferric chloride-copper sulfate ink (patent applied for, application number: 200610156980.X). This etching ink and its etching method can Effectively etch the aluminum film of solar cells and form various complex patterns; however, the residues of copper and iron metal conductive substances produced after etching by this method are attached to the amorphous silicon, which is difficult to clean and low in production efficiency, so it is not suitable for large-scale mass production

Chinese patent 200410038200.2 "Method of Etching Aluminum Layer Using Amorphous Silicon Carbon Mask", uses amorphous silicon to form a carbon mask for protection, and then uses plasma to etch the aluminum layer. This method requires expensive plasma equipment and many etching processes ,high cost

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