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Method for recovering dichloro-dihydro silicon from off-gas generated from the production of polycrystalline silicon

A technology of dichlorodihydrosilane and polysilicon, applied in separation methods, chemical instruments and methods, silicon, etc., can solve problems such as serious environmental pollution, waste of energy, backward technology, etc., to solve environmental pollution problems, improve product quality, The effect of saving project investment

Active Publication Date: 2009-02-04
CHINA ENFI ENGINEERING CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] my country's polysilicon industry started in the 1950s, realized industrialization in the mid-1960s, and developed blindly in the early 1970s. There were more than 20 production plants, all using traditional Siemens technology, backward technology, serious environmental pollution, and material consumption. Large, high production costs, most enterprises lose money and stop production or change production one after another
[0005] The outstanding feature of the traditional polysilicon production process is the tail gas wet recovery technology, that is, the tail gas in the reduction furnace is initially pressurized to separate chlorosilane and then rinsed with water to recover hydrogen, but it does not recycle dichlorodihydrogen silicon, etc. At the same time, due to During the water leaching process, impurity gases such as oxygen and carbon dioxide in the water will contaminate the hydrogen to be recovered, so a large amount of recovered hydrogen needs to be purified again. In addition, after the chlorosilane is hydrolyzed during the leaching process, a large amount of sewage will be generated, which needs further treatment , will also lead to environmental pollution and material consumption
Moreover, the dichlorodihydrogen silicon produced in the production has not been fully utilized, which has not only wasted energy, but also caused environmental pollution.

Method used

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  • Method for recovering dichloro-dihydro silicon from off-gas generated from the production of polycrystalline silicon

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Embodiment 1

[0023] refer to figure 1 , which shows a flow diagram of the industrial production of polysilicon that can be applied according to the dichlorodihydrogen silicon recovery method of the embodiment of the present invention. In the prior art, there are multiple methods to carry out the production of industrialized polysilicon. The polysilicon of the present invention is applied The production process uses industrial silicon and hydrogen chloride (HCl) as the main raw materials, and generates trichlorosilane (SiHCl) by controlling the reaction conditions. 3 )-based mixture of chlorosilane and hydrogen, and then trichlorosilane (SiHCl 3 ) after being purified, sent to the reduction furnace to make trichlorosilane (SiHCl 3 ) and auxiliary material hydrogen (H 2 ) reaction, reduction to generate polysilicon.

[0024] In the process of the above-mentioned industrial production of polysilicon, the tail gas produced mainly includes hydrogen (H 2 ), hydrogen chloride (HCl), and chlor...

Embodiment 2

[0039] Refer below image 3 A method for recovering dichlorodihydrogensilane from tail gas produced in the production of polysilicon according to the second embodiment of the present invention will be described. image 3 Shown is the flowchart according to the second embodiment of the present invention, and the main difference between this embodiment and the above-mentioned first embodiment is that it also includes liquid silicon tetrachloride (SiCl 4 ) a step of rinsing the tail gas.

[0040] In the traditional wet tail gas treatment process, the tail gas is usually rinsed with water. The purpose is to wash the hydrogen chloride (HCl) in the tail gas into the water, and part of the unrecovered chlorosilane is hydrolyzed into Hydrogen chloride and silicon dioxide hydrate, such sewage needs to be treated separately, resulting in large material consumption and serious environmental pollution. At the same time, a large amount of hydrogen chloride that can be used as raw material...

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Abstract

A method for recovering dichlordihydrosilicate from tail gas generated from polysilicon production comprises the following steps: the tail gas is leached at low temperature, pressurized and cooled for gas-liquid separation; gaseous hydrogen, hydrogen chloride and the dichlordihydrosilicate pass through a liquid absorbent to cause the gaseous hydrogen chloride and the dichlordihydrosilicate to be dissolved in the liquid absorbent, and the hydrogen is separated from the hydrogen chloride and the dichlordihydrosilicate; the hydrogen chloride and the dichlordihydrosilicate dissolved in the liquid absorbent are desorbed by increasing the temperature; the gas-liquid separation is carried out on the desorbed gaseous hydrogen chloride and the dichlordihydrosilicate by controlling the pressure and / or the temperature, therefore, the hydrogen chloride becomes gaseous and the dichlordihydrosilicate becomes liquid, and then the dichlordihydrosilicate is recovered. By adopting dry processing, the dichlordihydrosilicate in the tail gas is recovered and can be reused in the polysilicon production, therefore, the method has the advantages of adequate utilization of raw materials, reducing pollutants, solving the problem of environmental pollution, improving product quality and lowering cost.

Description

technical field [0001] The invention relates to a method for recovering and treating tail gas produced by industrial production of polysilicon, more specifically, to a method for recovering dichlorodihydrogen silicon from the tail gas produced by producing polysilicon. Background technique [0002] Polycrystalline silicon is the raw material for preparing monocrystalline silicon, which is ultimately used in the production of integrated circuits and electronic devices. It is one of the basic raw materials with the largest consumption and the highest purity requirements in the information industry. It is also a product and industry that the country encourages the development of. [0003] The world's advanced polysilicon production technology has always been monopolized by companies from the United States, Japan, and Germany. Each company has its own technical secrets and technical characteristics. After continuous research and development, it has formed its own production proce...

Claims

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Application Information

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IPC IPC(8): B01D53/00C01B33/107C01B33/03
Inventor 沈祖祥严大洲汤传斌肖荣晖毋克力
Owner CHINA ENFI ENGINEERING CORPORATION
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