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Growth method of carbon nano-tube array

A technology of carbon nanotube array and growth method, which is applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problems of inaccurate temperature control, low energy utilization rate, slow temperature change, etc., and achieve temperature rise And the effect of fast cooling speed, improved energy utilization rate and fast growth rate

Active Publication Date: 2011-03-23
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In traditional chemical vapor deposition, tube furnace is the most commonly used heating method, but based on the characteristics of tube furnace design, there are some shortcomings that are difficult to overcome, such as large power consumption (mostly 2000W), energy Low utilization rate, large heat capacity, slow temperature change, and low product efficiency; the center temperature is affected by various factors such as vacuum degree and gas flow rate, and the temperature control is inaccurate, and the temperature gradually decreases from the center to both ends
This is not compatible with the trend of environmental protection, precision, and high energy utilization in current synthesis experiments, especially for chemical vapor deposition experimental systems that require rapid temperature changes and precise temperature control, which is the Achilles heel of tube furnaces

Method used

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  • Growth method of carbon nano-tube array
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  • Growth method of carbon nano-tube array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1) Using a silicon wafer as the substrate, first sputter 10nm aluminum oxide on its smooth surface, and then sputter a 2nm elemental iron layer on it;

[0027] 2) placing the iron-plated substrate on the heating sheet of the micro-zone heater;

[0028] 3) Start the micro-zone heating control power supply, use the silicon wafer as the heating plate, and set the temperature to 750°C;

[0029] 4) Pass argon, hydrogen and acetylene, the gas flow rate is 560sccm, 200sccm and 30sccm respectively;

[0030] 5) After reacting for 15 minutes, turn off the power supply of the micro-zone heating controller, take out the substrate, obtain samples and test them.

[0031] From figure 1 and 2 It can be seen that the grown carbon nanotube arrays are relatively uniform, with a length of 3.5 mm, good quality, few impurities, straight tubes, and close relationship between tubes and tubes. After 10 min of ethanol ultrasound, they are still arranged in bundles ( see image 3 ), the tube...

Embodiment 2

[0033] 1) Using a silicon wafer as a substrate, first sputter 10nm aluminum oxide on its smooth surface, and then sputter a 1nm elemental iron layer on it;

[0034] 2) placing the iron-plated substrate on the heating sheet of the micro-zone heater;

[0035] 3) Start the micro-zone heating control power supply, use the silicon wafer as the heating plate, and set the temperature to 750°C;

[0036] 4) Pass argon, hydrogen and acetylene, the gas flow rate is 560sccm, 200sccm and 30sccm respectively;

[0037] 5) After reacting for 15 minutes, turn off the power supply of the micro-zone heating controller, take out the substrate, obtain samples and test them.

Embodiment 3

[0039] 1) Using a silicon wafer as a substrate, first sputter 10nm aluminum oxide on its smooth surface, and then sputter a layer of 0.5nm elemental iron layer on it;

[0040] 2) placing the iron-plated substrate on the heating sheet of the micro-zone heater;

[0041] 3) Start the micro-zone heating control power supply, use the silicon wafer as the heating plate, and set the temperature to 750°C;

[0042] 4) Pass argon, hydrogen and acetylene, the gas flow rate is 560sccm, 200sccm and 30sccm respectively;

[0043] 5) After reacting for 15 minutes, turn off the power supply of the micro-zone heating controller, take out the substrate, obtain samples and test them.

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Abstract

A method for growing a carbon nanotube array relates to a carbon nanotube, in particular to a furnace-free method for growing a very long carbon nanotube array with low energy consumption. The invention provides a method for growing a carbon nanotube array. A substrate is provided, a buffer layer and a catalyst layer are sputtered successively on the surface of the substrate to obtain the substrate with the top surface sputtered with the buffer layer and the catalyst layer; the substrate with the top surface spurted with the buffer layer and the catalyst layer is put on a heating element; a micro-area heating control power supply is switched on, the heating element is directly taken as a heating device to heat the substrate; a carrier gas and a carbon source gas are filled in; then the micro-area heating control power supply is switched off, the substrate is taken out to obtain a sample.

Description

technical field [0001] The invention relates to a carbon nanotube, in particular to a method for growing an ultra-long (mm level) carbon nanotube array with low energy consumption and without a furnace. Background technique [0002] Carbon nanotubes are a new type of one-dimensional nanomaterials discovered in the early 1990s. The special structure of carbon nanotubes determines their special properties, such as high tensile strength and high thermal stability. With the change of the helical mode of carbon nanotubes, carbon nanotubes can exhibit metallic or semiconducting properties. Because carbon nanotubes have an ideal one-dimensional structure and excellent properties in the fields of mechanics, electricity, and heat, they have shown broad application prospects in interdisciplinary fields such as material science, chemistry, and physics, including field emission flat panel displays, Single electron devices, atomic force microscope tips, thermal sensors and filters, etc....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/02C23C14/34C23C14/06
Inventor 谢素原马春印林水潮江智渊黄荣彬郑兰荪
Owner XIAMEN UNIV
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