Device and method for manufacturing solar grade polysilicon

A solar-grade and device-manufacturing technology, which is applied in the field of manufacturing solar-grade polysilicon devices and solar-grade polysilicon devices, can solve the problems of numerous process steps, low production efficiency, expensive equipment, and the like, so as to reduce energy consumption and increase Improved surface area and purification efficiency

Inactive Publication Date: 2009-03-04
上海太阳能工程技术研究中心有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the shortcomings of the prior art, such as numerous process steps, expensive equipment, high energy consumption, low production efficiency, and high cost, the purpose of the present invention is to provide a device for manufacturing solar-grade polysilicon; Plasma smelting, suspension smelting and directional solidification processes can continuously, quickly and efficiently produce low-cost solar-grade polysilicon

Method used

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  • Device and method for manufacturing solar grade polysilicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Adjust the directional solidification mechanism 8 to raise the water-cooled chassis 6 to the bottom of the suspension melting crucible 2, and add 3 kg of industrial silicon material 11 into the suspension melting crucible 2. Turn on the vacuum system 9 to evacuate the vacuum chamber 1 to 10 -2 Pa. Turn on the induction plasma generator 4 and the induction coil 5, adjust the power of the induction plasma generator 4 to 60 kilowatts, and adjust the power of the induction coil 5 to 150 kilowatts. First, the silicon material is gradually melted into a silicon liquid under the high temperature of the plasma, and then the induced magnetic field generates an induced current in the silicon liquid. After the industrial silicon material is completely melted and suspended, water vapor (flow rate: 50 psig) is introduced. Add silicon material into the crucible at a rate of 100 g / min until the total melting amount reaches 10 kg. Then upwardly lift the water-cooled chassis 6 until ...

Embodiment 2

[0028] Adjust the directional solidification mechanism 8 to raise the water-cooled chassis 6 to the bottom of the suspension melting crucible 2, and add 2 kg of industrial silicon material 11 into the suspension melting crucible 2. Turn on the vacuum system 9 to evacuate the vacuum chamber 1 to 10 -2 Pa. Turn on the induction plasma generator 4 and the induction coil 5, adjust the power of the induction plasma generator 4 to 50 kilowatts, and adjust the power of the induction coil 5 to 120 kilowatts. First, the silicon material is gradually melted into a silicon liquid under the high temperature of the plasma, and then the induced magnetic field generates an induced current in the silicon liquid. After the industrial silicon material is completely melted and completely suspended, liquid water (flow rate: 10ml / min) is introduced. Add silicon material into the crucible at a rate of 100 g / min until the total melting amount reaches 10 kg. Then then upwardly lift the water-coole...

Embodiment 3

[0030] Adjust the directional solidification mechanism 8 to lift the water-cooled chassis 6 to the bottom of the suspension melting crucible 2, and add 5 kg of industrial silicon material 11 into the suspension melting crucible 2. Turn on the vacuum system 9 to evacuate the vacuum chamber 1 to 10 -2 Pa. Turn on the induction plasma generator 4 and the induction coil 5, adjust the power of the induction plasma generator 4 to 80 kilowatts, and adjust the power of the induction coil 5 to 170 kilowatts. First, the silicon material is gradually melted into a silicon liquid under the high temperature of the plasma, and then the induced magnetic field generates an induced current in the silicon liquid. After the industrial silicon material is completely melted and completely suspended, HCl gas (flow rate: 50 psig) is introduced. Add silicon material into the crucible at a rate of 150 g / min until the total melting amount reaches 10 kg. Then then upwardly lift the water-cooled chass...

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Abstract

The invention discloses a device used to prepare solar grade polysilicon, which comprises a vacuum chamber [1]; a feeder [3] is arranged above the vacuum chamber [1]; the vacuum chamber [1] is provided with a suspension smelting crucible [2]. A sensitive coil [5] is wound around the suspension smelting crucible [2]; a sensitive plasma generator [4] is arranged above the suspension smelting crucible [2], and a water-cooled chassis [6] and a lifting device thereof which are controlled by an oriented solidifying mechanism [8] are arranged below the suspension smelting crucible [2]. A graphite heating cover [7] is arranged around the pull-down stroke of the water-cooled chassis [6]. The invention also discloses a preparation method of the solar grade polysilicon, which comprises the following steps: 1. raw material selection; 2. melting; 3. suspension smelting; 4. plasma impurity removal; 5. oriented solidification and shaping; 6. continuous feeding. In the invention, plasma smelting, suspension smelting and oriented solidification process are realized in a device, and the beneficial effect of continuously and quickly producing low-cost solar grade polysilicon with high efficiency can be achieved.

Description

technical field [0001] The invention relates to the manufacture of semiconductor devices, in particular to a device for manufacturing solar-grade polysilicon; the invention also relates to a method for manufacturing the solar-grade polysilicon device. Background technique [0002] At present, about 95% of photovoltaic products in the world use monocrystalline silicon, amorphous silicon and thin film silicon. The quality and cost of silicon raw materials play a decisive role in the photovoltaic industry. [0003] The vast majority of manufacturers in the world use HCl gas treatment technology to produce polysilicon. During the Siemens process, the silicon obtained by chemical deposition is deposited on the wire, and the production efficiency and tail gas recovery rate are low. The Ethyl's company in the United States Using the fluidized bed technology to reduce silane with H2, a high-purity silicon product with a diameter of 700 μm is obtained, which improves the recovery ra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/00C01B33/037
Inventor 张泰生李红波陈鸣波
Owner 上海太阳能工程技术研究中心有限公司
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