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Self-air-suction vacuum plating method

A vacuum coating and self-breathing technology, which is applied in vacuum evaporation coating, sputtering coating, ion implantation coating, etc., can solve the problems of not considering the activity of coating materials, the vacuum system is not universal, and the materials are not the same. , to achieve strong universality, speed up the process of vacuuming, and improve the effect of purity

Inactive Publication Date: 2009-07-29
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

[0009](1) The suction device has a special structure, most of which are placed inside the vacuum chamber, which is equivalent to a built-in suction pump. It can only be used after matching in connection and other aspects, so the portability is poor, and it is not universal for vacuum systems
[0010](2) There are limitations in the use of getter materials. The getter materials and coating materials are separated, that is, the two materials are different, and the use of coating materials is not considered. The activity of the material itself for gettering

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0030] Figure 4 It is a schematic flow chart of the self-absorbing vacuum coating process of the present invention, and the operation steps shown are as follows (1) evacuate the vacuum chamber to a preset value P1; (2) pre-deposit a layer of thin film under the shielded state of the substrate; (3) ) stop the thin film deposition, continue vacuuming to the preset value P2, P2 < P1; (4) keep the substrate in an unshielded state, and formally deposit the thin film on the substrate. The method is used for evaporation coating method or sputtering coating method or ion coating method or ion beam assisted deposition method or ionization group beam coating method. Suitable for active metals or alloy films containing active metals, including magnesium, aluminum, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, rubidium, stronti...

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Abstract

The invention discloses a self suction vacuum coating method. In the method, a membrane is deposited in advance when the vacuum degree does not meet the preset value before formal membrane deposition, then deposition is stopped and vacuumizing is continued. After the gas pressure is rapidly decreased to the preset value by making use of the self suction action of the membrane, the formal membrane deposition is carried out. The method can greatly shorten the period of vacuumizing, reduce active gas composition in the residual gas, increase the purity of the membrane, and is applicable to preparing active metal or alloy membrane thereof by using physical vapor deposition method. The method has the characteristics of simple operation and strong universality without changing the original coating equipment.

Description

technical field [0001] The invention relates to the technical field of physical vapor deposition of thin films, in particular to a self-absorbing vacuum coating method. Background technique [0002] Physical vapor deposition of thin films includes methods such as evaporation, sputtering, ion plating, ion beam assisted deposition, and ionized cluster beam plating. Almost all of these methods need to be carried out under high vacuum or even ultra-high vacuum conditions to improve the thin film Purity, reduce the residual gas in the vacuum chamber, especially the pollution of the film by active gases such as oxygen and water vapor. However, vacuuming will consume a lot of time, which seriously restricts the production efficiency of thin film materials and devices. [0003] Using the principle of material suction to vacuum is a widely used method, such as titanium sublimation pump and sputtering ion pump, which belong to ultra-high vacuum pumps. The basic principle is to evapor...

Claims

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Application Information

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IPC IPC(8): C23C14/22C23C14/24C23C14/34C23C14/46
Inventor 杜晓松靖红军蒋亚东
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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