High-pressure sintering preparation method of high-densification high-performance nano crystal block thermoelectric material
A thermoelectric material, high-pressure sintering technology, applied in the manufacture/processing of thermoelectric devices, junction lead-out materials of thermoelectric devices, nanotechnology and other directions, can solve the problems of high thermoelectric figure of merit, low thermal conductivity, etc. High density, short time effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0052] Embodiment 1: high performance binary Bi 2 Te 3 Preparation method of alloy N-type nanocrystalline bulk material 1
[0053] (1) Using elemental Bi (99.999%) and Te (99.999%) as raw materials, according to Bi 2 Te 3 Weigh 20g of the stoichiometric ratio, put it into a tungsten carbide ball mill jar, and use alcohol as a process control agent to prepare nanocrystalline Bi by ball milling under the protection of argon. 2 Te 3 alloy powder. The ball mill was a Pulveristte 4 planetary high-energy ball mill from FRITSCH, Germany, and the relevant parameters were as follows: ball-to-material ratio: 20:1, the rotation speed of the large disk was 300 rpm, the rotation speed of the small disk was 900 rpm, and the ball milling time was 100 hours. The average grain size was estimated to be about 10 nm using X-ray diffraction spectroscopy.
[0054] (2) The prepared nanopowder is vacuum-dried in the transition chamber of the glove box. And in the glove box, use a mold with a d...
Embodiment 2
[0057] Embodiment 2: high performance binary Bi 2 Te 3 Preparation method of alloy N-type nanocrystalline bulk material 2
[0058] (1) Using elemental Bi (99.999%) and Te (99.999%) as raw materials, according to Bi 2 Te 3 Weigh 20g of the stoichiometric ratio and seal it in a quartz tube under vacuum. Put the quartz tube into the electric furnace to melt Bi 2 Te 3 Alloy material, heating rate: 20°C / min; melting temperature: 750°C; holding time: 15 hours; cooling rate: 2°C / min. The melted Bi 2 Te 3 After the alloy material is pulverized, it is put into a tungsten carbide ball mill tank, and alcohol is used as a process control agent, and the nanocrystalline Bi is prepared by ball milling under the protection of argon. 2 Te 3 alloy powder. The ball mill was a Pulveristte 4 planetary high-energy ball mill from FRITSCH, Germany, and the relevant parameters were as follows: ball-to-material ratio: 20:1, the rotation speed of the large disk was 300 rpm, the rotation speed ...
Embodiment 3
[0062] Embodiment 3: high performance ternary Bi 0.5 Sb 1.5 Te3 Preparation of Alloy P-type Nanocrystalline Bulk Materials
[0063] (1) Using elemental Bi (99.999%), Sb (99.999%) and Te (99.999%) as raw materials, according to Bi 0.5 Sb 1.5 Te 3 Weigh 20g of the stoichiometric ratio, put it into a tungsten carbide ball mill jar, and use alcohol as a process control agent to prepare nanocrystalline Bi by ball milling under the protection of argon. 0.5 Sb 1.5 Te 3 alloy powder. The ball mill was a Pulveristte 4 planetary high-energy ball mill from FRITSCH, Germany, and the relevant parameters were as follows: ball-to-material ratio: 20:1, the rotation speed of the large disk was 300 rpm, the rotation speed of the small disk was 900 rpm, and the ball milling time was 100 hours. The average grain size was estimated to be about 17 nm using X-ray diffraction spectroscopy.
[0064] (2) The prepared nanopowder is vacuum-dried in the transition chamber of the glove box. And in...
PUM
Property | Measurement | Unit |
---|---|---|
particle size | aaaaa | aaaaa |
particle size | aaaaa | aaaaa |
particle size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com