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A kind of preparation method of au-zno two-dimensional photonic crystal structure

A two-dimensional photonic crystal and crystal structure technology, applied in the field of semiconductor materials and devices, optoelectronic materials, can solve the problems of environmental pollution, low processing efficiency and high cost, and achieve the effects of good repeatability, low cost and reduced equipment requirements.

Inactive Publication Date: 2011-12-28
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photolithography technology in micro-nano processing technology has problems such as high cost, low processing efficiency and pollution to the environment.

Method used

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  • A kind of preparation method of au-zno two-dimensional photonic crystal structure
  • A kind of preparation method of au-zno two-dimensional photonic crystal structure
  • A kind of preparation method of au-zno two-dimensional photonic crystal structure

Examples

Experimental program
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Effect test

Embodiment 1

[0019] a), making a single-layer polystyrene ball template

[0020] Clean the silicon wafer, put it vertically into the suspension of polystyrene beads with a mass fraction of 0.1% after being ultrasonicated for 3 hours, and put it into an electric constant temperature blast drying oven for 3 days at a temperature of 50°C to obtain a template;

[0021] b), making patterned Au catalyst

[0022] Put the template obtained in step a into a small ion sputtering apparatus, spray Au on it, control the power at 2W, and take 200s; then put the template in a quartz boat, and put the quartz boat into a level that has been heated to 500°C in advance In the tubular growth furnace, keep at 500°C for 1 hour, take out the quartz boat, and take out the template;

[0023] c), growing Au-ZnO two-dimensional photonic crystal structure

[0024] Grind ZnO and carbon powder evenly with a mass ratio of 1:2, put them in a quartz boat as an evaporation source, then insert the template obtained in st...

Embodiment 2

[0026] a), making a single-layer polystyrene ball template

[0027] Clean the silicon wafer, put it vertically into the suspension of polystyrene beads with a mass fraction of 0.2% after being ultrasonicated for 5 hours, and put it into an electric constant temperature blast drying oven for 4 days at a temperature of 30°C to obtain a template;

[0028] b), making patterned Au catalyst

[0029] Put the template obtained in step a into a small ion sputtering apparatus, spray Au on it, control the power at 3W, and put the template into a quartz boat, and put the quartz boat into a level that has been heated to 450°C in advance In the tubular growth furnace, keep at 450°C for 1.5 hours, take out the quartz boat, and take out the template;

[0030] c), growing Au-ZnO two-dimensional photonic crystal structure

[0031] Grind ZnO and carbon powder evenly with a mass ratio of 2:3, put them in a quartz boat as an evaporation source, then insert the template obtained in step b vertic...

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Abstract

The invention discloses an Au-ZnO two-dimensional photonic crystal structure and a preparation method thereof. The crystal structure is formed by hexahedral quantum dots grown on a silicon chip arranged in a hexagonal array. The preparation method is to use a single Au-ZnO two-dimensional photonic crystals with hexagonal arrangement were grown on silicon wafers by thermal evaporation method. The invention can grow this structure in a large area on a silicon chip, and its unique structure has a great effect on improving ZnO photoluminescence and other characteristics.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials, semiconductor materials and devices, and in particular relates to an Au-ZnO two-dimensional photonic crystal structure and a preparation method thereof. Background technique [0002] ZnO is a wide bandgap semiconductor with large exciton binding energy, which has great application prospects in optoelectronic devices, and because of its special properties such as thermal stability, high mechanical strength and chemical stability, it has attracted much attention. There is interest in the study of photoluminescent properties of its nanostructures. The low-dimensional ZnO array material can restrict the movement of excitons and enhance the transition strength of excitons. Its unique optical and electrical properties make it of great application value in optoelectronic devices such as solar cells and piezoelectric materials. Now, people can prepare two-dimensional ZnO array materials...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B29/60B01J13/02
Inventor 吴玮朱自强郁可张正犁白丹张志
Owner EAST CHINA NORMAL UNIV