Bismuth telluride bulk nanometer material and preparation method thereof

A bulk material, bismuth telluride technology, applied in the direction of binary selenium/tellurium compounds, etc., can solve the problem of difficulty in preparing nanocrystalline bulk materials with controllable grain size, etc., and achieves low pressure and low sintering temperature. , the effect of simple process

Inactive Publication Date: 2009-12-09
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Traditional nanocrystalline bulk material preparation methods, such as electrochemical deposition, severe plastic deformation, amorphous, mec

Method used

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  • Bismuth telluride bulk nanometer material and preparation method thereof
  • Bismuth telluride bulk nanometer material and preparation method thereof
  • Bismuth telluride bulk nanometer material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) DC arc evaporation and condensation equipment is used, with the single mass of Te as the anode and metal tungsten as the cathode, in an atmosphere with an argon pressure of 0.1MPa, the reaction current is 40A, the voltage between the anode and the cathode is 50V, and the reaction time is 20min. Obtain Te nanopowder of 10-40nm;

[0023] 2) Using direct current arc evaporation and condensation equipment, using the single mass of Bi as the anode and metal tungsten as the cathode, in an atmosphere with an argon pressure of 0.1MPa, the reaction current is 40A, the voltage between the anode and the cathode is 50V, and the reaction time is 20min. Obtain Bi nanopowder of 10-30nm;

[0024] 3) Put Te nanopowder and Bi nanopowder in an argon atmosphere with an oxygen content of 0.05ppm in a molar ratio of 3:2, grind and mix them and put them into a graphite mold with a diameter of 20mm;

[0025] 4) Place the mold in the SPS sintering cavity, apply an axial pressure of 30MPa, s...

Embodiment 2

[0028] 1) DC arc evaporation and condensation equipment is used, with the single mass of Te as the anode and metal tungsten as the cathode, in an atmosphere with an argon pressure of 0.05MPa, the reaction current is 60A, the voltage between the anode and the cathode is 30V, and the reaction time is 30min. Obtain Te nanopowder of 10-40nm;

[0029] 2) Using direct current arc evaporation and condensation equipment, using the simple mass of Bi as the anode and metal tungsten as the cathode, in an atmosphere with an argon pressure of 0.05MPa, the reaction current is 60A, the voltage between the anode and the cathode is 30V, and the reaction time is 30min. Obtain Bi nanopowder of 10-40nm;

[0030] 3) Put Te nanopowder and Bi nanopowder in an argon atmosphere with an oxygen content of 0.05ppm in a molar ratio of 3:2, grind and mix them and put them into a graphite mold with a diameter of 20mm;

[0031] 4) Place the mold in the SPS sintering cavity, apply an axial pressure of 40MPa,...

Embodiment 3

[0034] 1) DC arc evaporation and condensation equipment is adopted, with the single mass of Te as the anode and metal tungsten as the cathode, in an atmosphere with an argon pressure of 0.05MPa, the reaction current is 100A, the voltage between the anode and the cathode is 40V, and the reaction time is 40min. Obtain Te nanopowder of 20-50nm;

[0035] 2) Using direct current arc evaporation and condensation equipment, using the simple mass of Bi as the anode and metal tungsten as the cathode, in an atmosphere with an argon pressure of 0.05MPa, the reaction current is 80A, the voltage between the anode and the cathode is 40V, and the reaction time is 40min. Prepare 20-50nm Bi nanopowder;

[0036] 3) Te nano-powder and Bi nano-powder are put into a graphite mold with a diameter of 20 mm after being ground and mixed in an argon atmosphere with an oxygen content of 0.1 ppm in a molar ratio of 3:2;

[0037] 4) Place the mold in the SPS sintering cavity, apply an axial pressure of 5...

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Abstract

The invention provides a bismuth telluride bulk nanometer material and a preparation method thereof, belonging to the field of nanometer material preparation. The material of the invention is characterized in that the chemical composition thereof is Bi2Te3 and the grain size thereof is 30nm to 100nm. The preparation method provided by the invention is characterized by comprising the following steps: preparing the nanometer powder of tellurium (Te) and bismuth (Bi) with the grain size thereof being 10nm to 50nm at the argon atmosphere with the pressure of argon being 0.05 to 0.1 MPa by the DC (direct current) arc evaporation condensation method using the simple substance bulks of Te and Bi as the anode and the metal tungsten (W) as the cathode respectively; grinding and mixing the nanometer powder of Te and Bi in the molar ratio of 3:2 at the argon atmosphere, and loading the nanometer powder into a graphite mould; placing the graphite mould in an SPS (Spark Plasma Sintering) cavity for sintering under the conditions that the axial pressure of 30 to 50 MPa is applied, and the atmosphere adopts argon, or the vacuum degree is 5 to 8 Pa; furnace-cooling to the room temperature to obtain the bismuth telluride bulk nanometer material. The preparation method of the invention has the advantages that the process is simple, the purity of the prepared bismuth telluride bulk is high and the grain size is controllable.

Description

technical field [0001] The invention belongs to the technical field of nano-material preparation, and in particular relates to a bismuth telluride nano-crystal bulk material and a preparation method thereof. Background technique [0002] Bismuth telluride thermoelectric material is the thermoelectric material with the best performance at room temperature, and it is also one of the earliest and most mature thermoelectric materials studied. Currently, most refrigeration components use this type of thermoelectric material. However, its maximum dimensionless thermoelectric figure of merit is still hovering around 1. If the electrical properties of bismuth telluride-based thermoelectric materials can be further optimized, its application scope and fields will be expanded. After years of research, it has been found that modifying its energy band structure through alloying and changing its transport properties through nanonization are two possible ways to further improve the perfor...

Claims

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Application Information

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IPC IPC(8): C01B19/04
Inventor 张忻马旭颐
Owner BEIJING UNIV OF TECH
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