Processing method for improving light exitance rate of light-exiting window of light-emitting chip

Abstract

The invention relates to a processing method for improving the light exitance rate of a light-exiting window of a light-emitting chip. The processing method comprises the step of etching a passivation layer on the light-exiting window and is characterized in that a layer of material layer grows at a time after the growth of a material layer which grows at the first time and the first step of an etching working procedure are finished and before the etching working procedure is finished everytime, wherein the material layer that grows at the first time and the material layers that grow later are defined as overlapped structures of one or a plurality of materials of the material layers; the first-step etching of all isotropic and the first-step etching of all anisotropic etchings are both carried out when the growth of the material layer that grows at the first time is finished, photoresist is coated for exposuring and developing, and the photoresist to be developed is eliminated; a layer of material layer grows on the obtained material layer again, and the secondary etching is carried out; and a layer of material layer grows on the basis of the obtained material layer for the third time. The surface processing technology of the light-exitance window adopted in the invention can increase the light-exitance rate of the light-emitting chip up to 20-30 percent under the condition of not reducing the known performance quality of a semiconductor light-emitting chip and further enhances the light-emitting brightness.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor light-emitting chip die processing, and specifically is a processing method for improving the light exit rate of the light-emitting window of the light-emitting chip. The method can improve semiconductor light-emitting chips prepared based on semiconductor epitaxial technology such as LED devices or semiconductor lasers.的光出率。 Light extraction rate. Background technique [0002] Since the American Hewlett-Packard (HP) company first realized mass production of LED products in the late 1960s, the LED industry has experienced more than 40 years of development. With the continuous improvement of LED performance, the application market has also expanded rapidly, such as traffic lights, automobile brake lights, tail lights, third brake lights, etc., especially high luminous efficiency LEDs and white LEDs that are promising to replace traditional lighting. It has been developed over the years, and the fu...

AI Technical Summary

Problems solved by technology

The disadvantage is that it is not easy to obtain high-quality crystals or form a rough semiconductor surface. Due to poor crystal quality, the electro-optical conversion efficiency is not high or the change of surface morphology reduces the contact performance of the device, resulting in the deterioration of the electrical characteristics of the device. Causes changes in current distribution and uniformity of light emission, and affects device efficiency, reliability and lifetime

[0009] 3. Application number: 200610101519.4, name: Light-emitting diode and its manufacturing method. The characteristic of this invention patent is that the n-GaN layer grown on the substrate has a structure with multiple protrusions to improve luminous efficiency and achieve better light output performance , is a special structure obtained by controlling the growth process of semiconductor materials. Growing the active layer material of the light-emitting structure on the surface of the uneven pattern will reduce the quality of material growth, thereby reducing the performance of the device.

[0010] 4. Application number: 200610101519.4, name: Light-emitting diode and its manufacturing method, the feature of this invention patent is that the n-GaN layer grown on the substrate has a structure with multiple protrusions to improve luminous efficiency and achieve better light output performance , is a special structure obtained by controlling the growth process of semiconductor materials. Growing the active layer material of the light-emitting structure on the surface of the uneven pattern will reduce the quality of material growth, thereby reducing the performance of the device.

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