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Laterally inclined LED chip and preparation method thereof

A technology of light-emitting diodes and chips, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light-emitting efficiency of light-emitting diode chips, and achieve the effects of improving light-emitting efficiency, reducing stress, and improving thinning

Inactive Publication Date: 2009-12-16
HC SEMITEK CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The object of the present invention is to aim at the low light extraction efficiency of the existing light-emitting diode chip and improve other problems caused by it, to provide a light-emitting diode chip with an inclined side and a preparation method thereof. Parallel surface) made into a light-emitting diode on a surface inclined to the light-emitting functional layer, which can improve the light-emitting efficiency of the light-emitting diode chip

Method used

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  • Laterally inclined LED chip and preparation method thereof
  • Laterally inclined LED chip and preparation method thereof
  • Laterally inclined LED chip and preparation method thereof

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Embodiment

[0037] Embodiment: Take a gallium nitride-based light-emitting diode with sapphire as the substrate 1 as an example.

[0038]A buffer layer 2, a gallium nitride N-type layer 3, a multiple quantum well layer 4 and a gallium nitride P-type layer 5 are epitaxially grown on the sapphire substrate 1. Isolation photolithography and dry etching are performed to form an N-type gallium nitride mesa; a nickel / gold transparent conductive layer 6 is evaporated (the thickness of the nickel layer is 10-50 The thickness of the gold layer is 30~100 ); Making N electrode 8; Making P electrode 9; Evaporating silicon dioxide passivation layer 7. See the following steps Figure 6 , The pattern window is lithographically and etched on the silicon dioxide passivation layer 7; fused phosphoric acid and ICP dry etching are used together to etch the epitaxial part at the position of the pattern window, through the temperature, light, time, and etching gas group Conditions such as separation and etchin...

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Abstract

The invention provides a laterally inclined LED chip and a preparation method thereof. The lateral face of the epitaxial layer of the chip is of a certain angle of inclination, thus the efficiency of light emission of the LED chip can be improved; the preparation method is as follows: firstly, an epitaxial layer grows on a substrate, wherein the epitaxial layer includes a buffer layer, an N-shaped layer, an multiple quantum well(MQW) layer and a P-shaped layer; an N-shaped layer region is formed by etching, a transparent conductive layer is plated on the P-shaped region, metal electrodes are respectively plated on the N-shaped region and the P-shaped region by evaporation, and a passivation layer is prepared on the entire chip; under the protection of the passivation layer, the epitaxial part is etched, and the speed of etching towards both sides is controlled so as to form an etched lateral face which is inclined in a certain angle; and the chip is thinned, scraped, cracked, tested and separated. The invention has the advantages of simple process and lower cost; meanwhile, the processing of the epitaxial layer in the invention contributes to the reduction of the inner stress of the chip as well as the bending deformation of the chip during processing, and also contributes to the improvement of effect of thinning, scraping and cracking the chip.

Description

Technical field [0001] The invention relates to a light-emitting diode chip with a special shape and structure, in particular to a light-emitting diode chip with inclined sides and a preparation method thereof. Background technique [0002] Light-emitting diode is a kind of light-emitting device that can convert electric energy into light energy with high efficiency, and is currently the most promising new generation of light source. Light-emitting diodes generally emit light through intrinsic transitions of direct band gap semiconductors, and have high photoelectric conversion efficiency, that is, high internal quantum effects. However, the refractive index of these semiconductors is generally 2 to 3.5. The relative refractive index with air is approximately 1. When light is emitted from these semiconductors to the air, there is only a small range of light emitted, and light from other angles is totally reflected back, see attached Figure one . Light propagating in semiconducto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 张建宝罗红波
Owner HC SEMITEK CORP
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