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Method for growing P-type zinc oxide film by using target doped with zinc phosphate

A technology of zinc oxide film and zinc phosphate, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of low carrier concentration, low mobility, instability, etc., and achieve good P-type conductivity performance, improve crystallization quality, and avoid contamination

Inactive Publication Date: 2010-04-07
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these doped or carrier concentrations are too low, or the mobility is too low, and they are extremely unstable, and they are prone to failure after being placed for a long time, so they can achieve stability, high carrier concentration and mobility, and low resistivity. There are not many zinc oxide P-type films

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  • Method for growing P-type zinc oxide film by using target doped with zinc phosphate
  • Method for growing P-type zinc oxide film by using target doped with zinc phosphate
  • Method for growing P-type zinc oxide film by using target doped with zinc phosphate

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Embodiment 1

[0025] Embodiment 1: a kind of method that adopts the target material doped with zinc phosphate to grow P-type zinc oxide thin film:

[0026] (1) Preparation of phosphorus-doped ZnO ceramic target: mix zinc phosphate powder and ZnO powder uniformly according to the volume ratio of 1:100 and make a blank, and the blank is sintered at a sintering temperature of 1000°C to form a phosphorus-doped ZnO ceramic target; The purity of zinc phosphate powder is 99.998%, and the purity of ZnO powder is 99.998%;

[0027] (2) Set up the plasma-assisted laser molecular beam epitaxy system: the plasma-assisted laser molecular beam epitaxy system adopts KrF excimer laser, the wavelength of KrF excimer laser is 240nm, the repetition frequency is 3Hz, and the energy is 80mJ; plasma-assisted laser molecular beam epitaxy The background vacuum of the system is 10 -7 Pa, the substrate is c-plane sapphire; after the substrate is chemically etched and ultrasonically cleaned, and dried with high-purit...

Embodiment 2

[0030] Embodiment 2: a kind of method that adopts the target material doped with zinc phosphate to grow P-type zinc oxide thin film:

[0031] (1) Preparation of phosphorus-doped ZnO ceramic target material: zinc phosphate powder and ZnO powder are mixed uniformly at a volume ratio of 5:100 and made into a billet, which is sintered at 1000°C, 1100°C or 1200°C to form phosphorus-doped Miscellaneous ZnO ceramic target; the purity of zinc phosphate powder is 99.998%, and the purity of ZnO powder is 99.998%;

[0032] (2) Set up the plasma-assisted laser molecular beam epitaxy system: the plasma-assisted laser molecular beam epitaxy system adopts KrF excimer laser, the wavelength of KrF excimer laser is 248nm, the repetition frequency is 10Hz, and the energy is 200mJ; plasma-assisted laser molecular beam epitaxy The background vacuum of the system is 10 -7 Pa, the substrate is c-plane sapphire or 6H-SiC; the substrate is chemically etched and ultrasonically cleaned, and dried with ...

Embodiment 3

[0035] Embodiment 3: a kind of method that adopts the target material doped with zinc phosphate to grow P-type zinc oxide thin film:

[0036] (1) Preparation of phosphorus-doped ZnO ceramic target: mix zinc phosphate powder and ZnO powder uniformly according to the volume ratio of 4:100 and make a blank, and the blank is sintered at a sintering temperature of 1100°C to form a phosphorus-doped ZnO ceramic target; The purity of zinc phosphate powder is 99.998%, and the purity of ZnO powder is 99.998%;

[0037] (2) Set up the plasma-assisted molecular beam epitaxy system: the plasma-assisted molecular beam epitaxy system adopts KrF excimer laser, the wavelength of the KrF excimer laser is 255nm, the repetition frequency is 5Hz, and the energy is 100mJ; The background vacuum of the epitaxial system is 10 -7 Pa, the substrate is c-plane sapphire or 6H-SiC; the substrate is chemically etched and ultrasonically cleaned, and dried with high-purity nitrogen, and the vacuum degree is >...

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Abstract

The invention discloses a ceramic target prepared by doping zinc oxide with zinc phosphate (the atom percent of zinc phosphate is 0.5%) through high temperature sintering (1000-1200 DEG C) and also discloses a new technology which uses plasma-assisted laser molecular beam epitaxy device and adopts two-step method to prepare P-type zinc oxide doped with phosphor through epitaxial growth under high vacuum condition (the background vacuum degree is 10<-7>Pa, the oxygen partial pressure is 10<-3>Pa during growth and the radio frequency power is 300-450W). The method comprises the following steps: firstly growing Mg0.1Zn0.9O double buffer layers at the low temperature of 400 DEG C and high temperature of 600 DEG C; then perform epitaxial growth of zinc oxide film doped with phosphor on the buffer layers which can successfully realize the conversion of P-type conductive type of the primary film; in addition, adopting rapid annealing technology at atmospheric pressure under oxygen atmosphere to improve the optical and electrical properties of the P-type zinc oxide film doped with phosphor.

Description

technical field [0001] The invention belongs to the fields of semiconductor thin film growth and P-type doping, and relates to a new method for semiconductor thin film growth and P-type doping, in particular to a high-temperature sintered ceramic target using zinc oxide doped with zinc phosphate. Molecular beam epitaxy is the latest technology for growing p-type zinc oxide thin films. Background technique [0002] Zinc oxide material is a wide bandgap II-VI group direct bandgap ultraviolet semiconductor material. Because it has a wide band gap (3.37eV), it has good high temperature resistance and radiation resistance; in addition, its room temperature exciton binding energy is high (60meV, greater than room temperature 24meV), so it is hoped Free exciton collisions can be achieved at room temperature, resulting in ultraviolet laser emission. This laser generation mode can greatly reduce the threshold of the laser and reduce energy consumption. At present, the laser emissio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/02C30B29/16C23C14/08C23C14/28
Inventor 张景文王东贺永宁彭昀鹏侯洵
Owner XI AN JIAOTONG UNIV