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A silicon-based field emission cathode material with low threshold electric field and its preparation method

The invention relates to a field emission cathode and a technology for emitting the cathode, which is applied to the cathode of a field emission flat panel display. , Silicon-based semiconductor thin film materials and their preparation, the field of semiconductor nano-film surface morphology and orientation and crystallinity control, can solve the problems of complex emission cathode preparation process, low emission current density, poor emission stability, etc., and achieve great commercial application potential, The preparation process is simple and easy, and the effect of high emission current density

Inactive Publication Date: 2011-11-30
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a silicon-based semiconductor field emission cathode material and its preparation method

Method used

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  • A silicon-based field emission cathode material with low threshold electric field and its preparation method
  • A silicon-based field emission cathode material with low threshold electric field and its preparation method
  • A silicon-based field emission cathode material with low threshold electric field and its preparation method

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Experimental program
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Effect test

Embodiment 1

[0033] The polished n-type (100) silicon was soaked in HF acid with a volume concentration of 3% for 2 minutes as the substrate, and the gallium nitride powder with a purity of 99.99% was sintered at 560°C for 120 minutes to make a gallium nitride target, and the substrate and target were placed in In the cavity of the laser pulse deposition system, the deposition chamber is pumped to about 5×10 -4 Pa, and heat the silicon substrate to 850°C, supply nitrogen with a purity of 99.99% as a protective gas and adjust the working pressure of the deposition chamber to 1Pa, set the frequency of the pulse laser to 13Hz, and start to deposit hexagonal ( 002) The gallium nitride thin film with preferred orientation and amorphous phase coexists, and the average thickness of the thin film reaches 40nm after maintaining for 2 minutes. The field emission current density is 1mA / cm 2 , the required applied electric field strength is 1.2V / μm.

Embodiment 2

[0035] The polished n-type (100) silicon was soaked in HF acid with a volume concentration of 3% for 2 minutes as the substrate, and the gallium nitride powder with a purity of 99.99% was sintered at 560°C for 120 minutes to make a gallium nitride target, and the substrate and target were placed in In the cavity of the laser pulse deposition system, the deposition chamber is pumped to about 5×10 -4 Pa, and heat the silicon substrate to 850°C, supply nitrogen with a purity of 99.99% as a protective gas and adjust the working pressure of the deposition chamber to 1Pa, set the frequency of the pulse laser to 13Hz, and start to deposit hexagonal ( 002) GaN thin film with preferred orientation and amorphous phase coexistence, maintain the time for 1.5min to make the average thickness of the thin film reach 30nm. The field emission current density is 1mA / cm 2 , the required applied electric field strength is 0.9V / μm.

Embodiment 3

[0037]The polished n-type (100) silicon was soaked in HF acid with a volume concentration of 3% for 2 minutes as the substrate, and the aluminum nitride powder with a purity of 98% was sintered at 560°C for 120 minutes to make an aluminum nitride target, and the substrate and target were placed in In the cavity of the laser pulse deposition system, the deposition chamber is pumped to about 1×10 -4 Pa, and heat the silicon substrate to 900°C, supply nitrogen with a purity of 99.99% as a protective gas and adjust the working pressure of the deposition chamber to 0.5Pa, set the frequency of the pulse laser to 12Hz, and the pulse energy to 350mJ / pulse and start to deposit hexagonal (002) AlN thin film with preferred orientation and amorphous phase coexistence, maintain the time for 1.5min to make the average thickness of the film reach 25nm. The field emission current density is 1mA / cm 2 , the required applied electric field strength is 2.1V / μm.

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Abstract

The invention provides a silicon-based field emission cathode material with a low threshold electric field and a preparation method thereof. The field emission cathode material can be GaN, AlN, BN, ZnO, ZnS, and has the following characteristics: a direct bandgap semiconductor with a bandgap width between 3eV and 7eV, can form a hexagonal wurtzite structure, and the material is along the hexagonal fiber The (002) crystal direction of the zinc ore structure grows preferentially; its thickness is greater than 20nm and less than 50nm; it has both hexagonal phase and amorphous phase. The preparation method of the field emission cathode material is as follows: using silicon as a base material, after pretreatment and HF acid soaking respectively, laser pulse deposits a film with a certain thickness on the base to obtain a final product. The preparation process provided by the present invention is simple and easy, and the prepared material has electron emission characteristics of low threshold electric field and high emission current density, and the cathode structure is based on silicon, which is easy to integrate with other microelectronic devices and is ideal for manufacturing vacuum microelectronics. ideal cathode for the device.

Description

technical field [0001] The invention belongs to the field of field emission cathode materials, in particular to a silicon-based semiconductor film material and its preparation technology, in particular to the control technology of the surface morphology, orientation and crystallinity of the semiconductor nano film. The material can be used for high-efficiency electron emission devices, and is especially suitable for cathodes of field emission flat panel displays. Background technique [0002] Field emission cathode preparation technology is the key technology and research hotspot of field emission flat panel display (FED)-based vacuum microelectronic devices. As an important semiconductor material in the contemporary electronics industry, monocrystalline silicon has the characteristics of mature technology, high quality, low cost, and easy doping, which are difficult to replace. More importantly, the silicon-based field emission cathode based on it is easy to realize integr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J29/04H01J1/304H01J9/02
Inventor 王如志赵维汪浩严辉王波宋雪梅朱满康侯育冬张铭
Owner BEIJING UNIV OF TECH
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