Semiconductor or flashlight pumping microchip laser module
A laser module and solid-state laser technology, applied in lasers, laser components, surveying and navigation, etc., can solve problems such as small pulse energy, harmful to human eyes, and complex structure
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Embodiment 1
[0016] Embodiment one: if figure 2 As shown, the laser gain medium Nd:YVO4(201) is end-pumped by the semiconductor laser diode, and the Nd:YVO4 crystal is phase-matched and angle-cut to directly generate linearly polarized light. The Nd ion doping concentration is 1%, and the length is 2mm. The generated laser The passive Q-switching crystal Cr4+:YAG (202) is converted into pulsed light, and the pulsed light passes through an optical parametric oscillator (OPO) (203), which is composed of a KTP crystal to tune and oscillate to output a 1.54 μm pulsed laser. Among them, the semiconductor laser diode pumping wavelength is 808nm, the 808nm pump light incident end face (204) of Nd:YVO4 is coated with a dielectric film with high reflectivity for 1.06 μm wavelength light, and the 1.54 μm light exit end face (206) of KTP is coated with A dielectric film with high emissivity for 1.06 μm wavelength light, a 1.06 μm laser resonator cavity is formed between the two dielectric films, and...
Embodiment 2
[0017] Embodiment two: if figure 2 As shown, the laser gain medium Nd:YAP (201) is end-pumped by the semiconductor laser diode, and the Nd:YAP phase-matching angle cutting directly generates linearly polarized light. The Nd ion doping concentration is 1%, and the length is 2mm. The pump light is passively modulated Q crystal Cr4+:YAG (202) is converted into pulsed light, and the pulsed light is tuned and oscillated by an optical parametric oscillator (OPO) (203) to output a 1.54 μm pulsed laser. The optical parametric oscillator (OPO) (203) is composed of a KTA crystal, The crystal length is 20mm. The tuned oscillation outputs 1.54μm pulse laser. The 808nm pump light incident end face (204) of Nd:YAP is coated with a dielectric film with high reflectivity for 1.06 μm wavelength light, and the 1.54 μm light exit end face (206) of KTA is coated with a high emissivity film for 1.06 μm wavelength light. Dielectric film, a 1.06 μm laser resonator cavity is formed between the two...
Embodiment 3
[0018] Embodiment three: as figure 2As shown, the laser gain medium Nd:YLF (201) is end-pumped by a semiconductor laser diode, and the Nd:YLF crystal is cut at a phase matching angle to generate linearly polarized light. The doping concentration of Nd ions is 2%, and the length is 2mm. The pumping light is converted into pulsed light by the passive Q-switched crystal Cr4+:YAG (202), and the pulsed light is tuned and oscillated by an optical parametric oscillator (OPO) (203) to output a 1.54 μm pulsed laser, and the optical parametric oscillator (OPO) (203 ) is composed of KTA crystal, the crystal length is 20mm, and the tuned oscillation outputs 1.54μm pulsed laser. The 808nm pump light incident end face (204) of Nd:YLF is coated with a dielectric film with high reflectivity for 1.05 μm wavelength light, and the 1.54 μm light exit end face (206) of KTA (203) is coated with a high reflectivity film for 1.05 μm wavelength light. A dielectric film with reflectivity, a 1.05 μm l...
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