Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor or flashlight pumping microchip laser module

A laser module and solid-state laser technology, applied in lasers, laser components, surveying and navigation, etc., can solve problems such as small pulse energy, harmful to human eyes, and complex structure

Inactive Publication Date: 2010-06-23
FUJIAN CASTECH CRYSTALS
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Laser pulse modules generally have disadvantages such as complex structure, inconvenient assembly, expensive, harmful to human eyes, small pulse energy, and low repetition rate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor or flashlight pumping microchip laser module
  • Semiconductor or flashlight pumping microchip laser module
  • Semiconductor or flashlight pumping microchip laser module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment one: if figure 2 As shown, the laser gain medium Nd:YVO4(201) is end-pumped by the semiconductor laser diode, and the Nd:YVO4 crystal is phase-matched and angle-cut to directly generate linearly polarized light. The Nd ion doping concentration is 1%, and the length is 2mm. The generated laser The passive Q-switching crystal Cr4+:YAG (202) is converted into pulsed light, and the pulsed light passes through an optical parametric oscillator (OPO) (203), which is composed of a KTP crystal to tune and oscillate to output a 1.54 μm pulsed laser. Among them, the semiconductor laser diode pumping wavelength is 808nm, the 808nm pump light incident end face (204) of Nd:YVO4 is coated with a dielectric film with high reflectivity for 1.06 μm wavelength light, and the 1.54 μm light exit end face (206) of KTP is coated with A dielectric film with high emissivity for 1.06 μm wavelength light, a 1.06 μm laser resonator cavity is formed between the two dielectric films, and...

Embodiment 2

[0017] Embodiment two: if figure 2 As shown, the laser gain medium Nd:YAP (201) is end-pumped by the semiconductor laser diode, and the Nd:YAP phase-matching angle cutting directly generates linearly polarized light. The Nd ion doping concentration is 1%, and the length is 2mm. The pump light is passively modulated Q crystal Cr4+:YAG (202) is converted into pulsed light, and the pulsed light is tuned and oscillated by an optical parametric oscillator (OPO) (203) to output a 1.54 μm pulsed laser. The optical parametric oscillator (OPO) (203) is composed of a KTA crystal, The crystal length is 20mm. The tuned oscillation outputs 1.54μm pulse laser. The 808nm pump light incident end face (204) of Nd:YAP is coated with a dielectric film with high reflectivity for 1.06 μm wavelength light, and the 1.54 μm light exit end face (206) of KTA is coated with a high emissivity film for 1.06 μm wavelength light. Dielectric film, a 1.06 μm laser resonator cavity is formed between the two...

Embodiment 3

[0018] Embodiment three: as figure 2As shown, the laser gain medium Nd:YLF (201) is end-pumped by a semiconductor laser diode, and the Nd:YLF crystal is cut at a phase matching angle to generate linearly polarized light. The doping concentration of Nd ions is 2%, and the length is 2mm. The pumping light is converted into pulsed light by the passive Q-switched crystal Cr4+:YAG (202), and the pulsed light is tuned and oscillated by an optical parametric oscillator (OPO) (203) to output a 1.54 μm pulsed laser, and the optical parametric oscillator (OPO) (203 ) is composed of KTA crystal, the crystal length is 20mm, and the tuned oscillation outputs 1.54μm pulsed laser. The 808nm pump light incident end face (204) of Nd:YLF is coated with a dielectric film with high reflectivity for 1.05 μm wavelength light, and the 1.54 μm light exit end face (206) of KTA (203) is coated with a high reflectivity film for 1.05 μm wavelength light. A dielectric film with reflectivity, a 1.05 μm l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a solid laser module, belonging to the field of application of crystal materials in photoelectric field. The solid laser module can be applied in laser ranging systems and positioning systems. The invention mainly comprises a micro solid laser module formed by laser gain medium, passive Q adjusting crystal and an optical parametric oscillator (OPO). The micro solid laser module can be applied in laser ranging systems and positioning systems and solves the detects of the traditional laser ranging device that the volume is large, the assembling and the adjustment are inconvenient, the emitted light wave is long and harmful to eyes of human, the cost is high and the like. The invention has the advantages that the assembling and the adjustment are convenient, the cost is low, no harm is caused to eyes of human, the volume is small, the single-time pulse energy is high, the pulse repetition rate is high and the like.

Description

technical field [0001] The invention relates to a laser module used in laser ranging, in particular to a semiconductor or flash lamp pumped microchip laser module. technical background [0002] When the laser with a wavelength of 1.4-2μm is irradiated to the human eye, most of it will be absorbed by the lens, and only a few will reach the retina, which will cause less damage to the human eye. Therefore, lasers in this band are called eye-safe lasers. In this band, the safest laser wavelength is around 1.54 μm. At present, the methods to obtain eye-safe laser with this wavelength mainly include Raman frequency-shifted laser technology, erbium glass laser technology and OPO technology. [0003] The Raman frequency shift can only be achieved with the help of a high-pressure gas (CH4) Raman tube. The laser system has a complex structure and poor reliability; the erbium glass laser is a device that can directly achieve 1.54 μm human eye-safe laser output, but the erbium glass is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S3/091H01S3/16H01S3/11G01S7/484G01S17/08G01S17/87G01C3/00
Inventor 郑熠吴少凡庄松岩江枫
Owner FUJIAN CASTECH CRYSTALS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com