Production method of silicon-based nanopore

Abstract

The invention provides a production method of a silicon-based nanopore, which comprises the following steps of: 1. covering a protecton material and a top protection material on a silicon substrate, and machining a pattern which needs to be etched on the silicon substrate onto the two layers of protection materials with a micro-production technology, wherein the depth of the pattern reaches the surface of the bottom of the silicon substrate; 2. etching a perpendicular columnar pore on the surface of the bottom of the silicon substrate with a deep reaction ion etching DRIE method; 3. coating photoresist on the surface of the columnar pore; and 4. continually downwards corroding from the end of the columnar pore with potassium hydroxide alkaline solution by means of wet etching, so that an included angle between a corroded inclined plane and the horizontal plane is 53.7 degrees, so as to obtain the silicon-based nanopore with controllable size. The production method provides technical support for the surface controlling technology of atomic beam and the other nanometer machining technologies, and plays a role in promoting.

Description

technical field [0001] The invention relates to the field of silicon surface processing technology and deep processing technology, in particular to a method for making silicon-based nanoholes for atomic lithography. Background technique [0002] In the field of nanofabrication, the application of atomic optics is an emerging field of research that offers a variety of methods for fabricating nanoscale materials. A great deal of research in fundamental atomic optics has provided many different ways of manipulating free neutral atoms. The main direction of research is the control of the movement of atoms as they approach the surface, with the aim of constructing arbitrary nanostructures on the substrate surface. Fabricating nanopores of different sizes, nanoscale stripes, lattices, or desired specific patterns can be used to control the movement of atoms. [0003] At present, there is no very good method for making silicon-based nanopores, which is mainly determined by the ch...

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Problems solved by technology

Mintova et al. used the in-situ hydrothermal crystallization method to obtain Silicalite-1 nano-molecular sieve grains with uniform particle size distribution for the first time [Document 1: Mintova S, Mo S, Bein T.[J].Nanosized AlPO4-5 molecular sieves and Ultrathin films prepared by microwave synthesis.Chem.Mater, 1998,10(12):4030~4036], the method is simple in operation and does not require special devices, but the molecular sieve crystal size and orientation control of the prepared method have poor reproducibility, To obtain a dense and pinhole-free film, a thickness of at least several microns is required, which leads to cracking and even falling off when the temperature changes

Xu et al. successfully synthesized NaA-type molecular sieve membranes using microwave heating technology [Document 2: Xu X C, Yang WS, Liu J, et al.[J].Synthesis of ahigh-permeance NaA zeolite membrane by microwave heating Adv.Mater, 2000, 12(3): 195~197], this method can increase the crystallization rate and reduce the crystal size to a certain extent, but it is prone to local accumulation of molecular sieves, and it is difficult to control the formation of a large area of ​​uniform and dense zeolite on the surface of the support substrate. molecular sieve membrane

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