Method for preparing doped zinc oxide by adopting metallic source chemical vapor deposition technology

A technology of chemical vapor deposition and metal source, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of low vapor pressure doping conditions, difficult to achieve controllable doping, etc.

Active Publication Date: 2013-01-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the vapor pressure of the doping metal is low, it is difficult to achieve a large range of controlled doping by the above method
Moreover, many metals easily form stable solid oxides in the presence of water vapor, whose vapor pressure is too low to meet the doping conditions.

Method used

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  • Method for preparing doped zinc oxide by adopting metallic source chemical vapor deposition technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1: Preparation of gallium-doped zinc oxide

[0039] figure 1 The reducing gas in cylinder 1 adopts 4% H 2 N 2 -H 2 (Nitrogen-Hydrogen) mixed gas, the inert protection gas of gas cylinder 2 is high-purity nitrogen, and the oxygen source 3 is a bubble bottle added with deionized water. Specifically include the following steps:

[0040] Step 1: Mix metal gallium and metal zinc and put them in the zinc area of ​​the metal boat;

[0041] Step 2: Add a small amount of deionized water or hydrogen peroxide to the metal boat, and then put it into the MVPE growth system;

[0042] Step 3: After cleaning a 2-inch (0001) oriented sapphire substrate, install it on the substrate holder;

[0043] Step 4: Pass 5L / m nitrogen gas into the reaction chamber, and heat the metal boat at about 300°C until the water in it completely evaporates or reacts;

[0044] Step 5: Grow gallium-doped zinc oxide. The specific growth conditions and electrical Hall test results are shown i...

Embodiment 2

[0048] Embodiment 2: the preparation of indium-doped zinc oxide

[0049] figure 1 The reducing gas in cylinder 1 adopts 4% H 2 He-H 2 (Helium-hydrogen) mixed gas, high-purity helium is used as the inert protective gas in cylinder 2, and the oxygen source 3 is a bubbling bottle added with deionized water. Specifically include the following steps:

[0050] Step 1: put metal indium in the doped metal region of the metal boat, and put metal zinc in the metal zinc region of the metal boat.

[0051] Step 2: Add a small amount of deionized water or hydrogen peroxide to the metal boat, and then put it into the MVPE growth system;

[0052] Step 3: After cleaning a 2-inch (0001) oriented sapphire substrate, install it on the substrate holder;

[0053] Step 4: Pass 5L / m of helium gas into the reaction chamber, and heat the zinc boat at about 200-400°C until the water in it completely evaporates or reacts.

[0054] Step 5: grow indium-doped zinc oxide, see Table II for specific grow...

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Abstract

The invention discloses a method for preparing doped zinc oxide by adopting a metal-source chemical vapor deposition technology, comprising the following steps of: 1. adding a reducing gas path to a growing gas path of metal-source vapor phase epitaxy (MVPE); 2. respectively putting doped metal and metal zinc into a metal boat and adding a small quantity of deionized water or hydrogen peroxide; 3. putting a cleaned substrate on a substrate support; 4. carrying out oxidation treatment on the metal boat before growth; and 5. growing the doped zinc oxide, and opening the reducing gar path all the time in the growing process. The invention has the advantages of controllable doping, high growing speed, low cost and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth and optoelectronic device manufacturing, in particular to a method for preparing doped zinc oxide by using metal source chemical vapor deposition (MVPE) technology. Background technique [0002] As a third-generation wide-bandgap semiconductor material, zinc oxide has many superior properties and has been widely used in transparent conductive films and surface acoustic wave devices. In addition, zinc oxide has a high binding energy of free excitons (60meV), which has broad application prospects in the preparation of short-wavelength optoelectronic devices. In recent years, with the rapid development of the industrialization of blue light and ultraviolet light-emitting devices, the market demand for high-quality, large-size zinc oxide single crystal substrates is increasing. However, due to the high vapor pressure at the melting point of zinc oxide, the traditional melt pulli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/455C23C16/02
Inventor 王晓峰段垚刘祯曾一平
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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