Method for performing rapid laser heating by using mask protection
A rapid heating and masking technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing the frequency of laser action and poor crystallization quality of thin films, so as to reduce the frequency of laser crystallization and optimize the laser crystallization process , The effect of destructive inhibition
Inactive Publication Date: 2012-05-16
NANTONG ZONGYI NEW MATERIAL
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[0003] The purpose of the present invention is to overcome the problem of poor film crystallization quality in the crystallization process of the existing laser crystallization technology, and propose a process method that keeps the laser power constant and reduces the frequency of laser action
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[0016] After the deposition of the amorphous silicon film is completed, a mixed gas of NH3 and SiH4 is introduced to deposit the silicon nitride film. The deposition pressure is 5Pa. The substrate deposition temperature was kept at 250° C., the deposition power was 400 W, and the deposition time was 60 minutes to form a silicon nitride mask layer.
[0017] Place the above-mentioned amorphous silicon film containing a silicon nitride protective layer in the cavity of the protective container 1, see figure 1 . A spacer 12 is built in the cavity of the container 1 , and the silicon wafer 4 of the amorphous silicon film is placed on the spacer 12 . The top of the container 1 is provided with a window 11 for the laser beam 3 to enter, the laser (not shown) is placed outside the container 1 , and the focusing lens 2 on it is placed above the window 11 . The laser beam reflected by the focusing mirror 2 is irradiated on the amorphous silicon thin film 4 on the spacer 12 . The lo...
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The invention relates to a method for performing rapid laser heating by using mask protection. The method comprises the following steps of: placing a silicon wafer of a polycrystalline silicone substrate into a PECVD deposition device for completing the deposition of an amorphous silicon film; depositing silicon nitride film to form a mask of the silicon nitride film; placing the amorphous silicon film which contains the mask into a protective container which contains inert gases; making the amorphous silicon film generate a light spot with the area of 1*1 cm<2> in a positive defocusing amount direction by using a pulse laser with a wavelength of 1.00 to 1.10 microns by adjusting the size of the light spot so as to heat the film for crystallization annealing; under the condition of maintaining the output power, making the film meet the requirement of the grain size for film epitaxial growth by adjusting a pulse frequency; and removing a silicon nitride protective layer by using the aqueous solution of hydrofluoric acid. The method makes the film epitaxial grains controllable, forms the mask by the deposition for preventing the film from oxidation, and improves the energy utilization rate of the laser in the substrate by the laser antireflection capability so as to reduce the energy consumption of the laser; therefore, the quality of the film is improved, and a laser cleaning process is optimized.
Description
technical field [0001] The invention relates to a method for laser heating amorphous silicon thin film materials, in particular to a laser rapid heating method using mask protection for reducing laser power and improving laser crystallization quality of amorphous silicon thin film by using a masking layer on the amorphous silicon thin film. Background technique [0002] Laser crystallization technology is a technology that uses the principle of high laser energy density and rapid temperature rise for rapid heat treatment to achieve rapid heating and crystallization of thin film materials. However, when the pulsed laser is used to heat the film at present, if the working frequency is too high, the crystallization quality will be poor such as film vaporization and cracks on the film surface; if the working frequency is too low, the film cannot be effectively crystallized. This has become a bottleneck of laser rapid heating technology. Therefore, it is very important to find a...
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IPC IPC(8): H01L21/268H01L21/318
Inventor 王强花国然朱海峰施敏张振娟黄静宋长青张华
Owner NANTONG ZONGYI NEW MATERIAL