Process for producing laminate comprising Al-based group III nitride single crystal layer, laminate produced by the process, process for producing Al-based group III nitride single crystal substrate using the laminate, and aluminum nitride single cry

A single crystal substrate and laminated substrate technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as poor thermal expansion coefficient, crack cracking, deformation, etc.

Inactive Publication Date: 2010-12-15
NAT UNIV CORP TOKYO UNIV OF AGRI & TECH +1
View PDF1 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the HVPE method is difficult to precisely control the film thickness compared with the MOVPE method and the MBE method. Therefore, although it is not suitable for the formation of a crystal layered structure of a semiconductor light-emitting element, it can obtain a single layer with good crystallinity at a fast film formation rate. crystal, so the HVPE method is frequently used in vapor deposition for the purpose of forming a single crystal thick film
[0005] However, when forming group III nitride single crystals such as GaN, including Al-based group III nitride single crystals, by vapor deposition, it is difficult to prevent lattice mismatch between the substrate and the deposited group III nitrides. Dislocations arising from the interface
Furthermore, since deposition is performed at a high temperature close to 1000°C, when depositing a thick film, the difference in thermal expansion coefficient with the substrate causes problems such as warpage after deposition, increase of dislocations due to deformation, crack cracking, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for producing laminate comprising Al-based group III nitride single crystal layer, laminate produced by the process, process for producing Al-based group III nitride single crystal substrate using the laminate, and aluminum nitride single cry
  • Process for producing laminate comprising Al-based group III nitride single crystal layer, laminate produced by the process, process for producing Al-based group III nitride single crystal substrate using the laminate, and aluminum nitride single cry
  • Process for producing laminate comprising Al-based group III nitride single crystal layer, laminate produced by the process, process for producing Al-based group III nitride single crystal substrate using the laminate, and aluminum nitride single cry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0109] This is an example in which a substrate for self-supporting substrate production was produced using the HVPE method as a vapor deposition method. In this embodiment, a (111) silicon single crystal substrate with a diameter of 2 inches and a thickness of 280 μm was used as the base substrate, and aluminum nitride was used as the material of the single crystal layer and the non-single crystal layer.

[0110] figure 2 The HVPE apparatus shown is equipped with the reactor main body which consists of the cylindrical quartz glass reaction tube 21, the external heating unit 22 arrange|positioned outside this reaction tube 21, and the support stand 23 arrange|positioned inside this reaction tube. Furthermore, it is a structure in which the carrier gas and the raw material gas are supplied from one end portion of the reaction tube 21, and the carrier gas and the unreacted reaction gas are discharged from the opening provided in the side wall near the other end portion. In addi...

Embodiment 2

[0122] In this example, the apparatus and substrate described in Example 1 were used, and in addition to the flow of Example 1, a single crystal layer was formed on the base substrate, and the supply of aluminum trichloride as a raw material gas was interrupted, and then an additional supply of 10 A process in which 0.1 sccm of oxygen per second is used as an oxygen-containing gas. The deposition conditions of the single crystal layer and the polycrystalline layer, and the peeling conditions of the silicon substrate were the same, and a substrate for self-supporting substrate production having a thickness comparable to that of Example 1 was obtained.

[0123] The θ-2θ measurement of X-ray diffraction was performed from the exposed side of the polycrystalline layer of the substrate for self-supporting substrate production, and the intensity ratio was I (002) / I (100) is 1.5. In addition, the surface on the exposed side of the single crystal layer was the same mirror surface a...

Embodiment 3

[0126] In this example, the same apparatus and substrate as in Example 1 were used to form an amorphous layer as the non-single crystal layer in Example 1. The first layer was deposited on the silicon substrate as the base substrate under the same raw material supply conditions as in Example 1 for 2 minutes to form a 0.2 μm single crystal layer. Next, the supply of aluminum trichloride was stopped, and the pressure was changed to 500 Torr. The temperature of the reaction tube was maintained at 500°C by the external heating unit, while the power supply to the support table was removed, and the temperature of the base substrate was set to 800°C. These operations were performed within 10 minutes after the supply of aluminum trichloride was temporarily stopped. Next, the supply of aluminum trichloride gas was turned on again, and maintained for 240 minutes, to further deposit an aluminum nitride amorphous layer of 220 μm. The silicon substrate was removed by chemical etching to ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

Disclosed is a process for producing a laminate, comprising (1) the step of providing a base substrate having a surface formed of a single crystal of a material different from a material for constituting an Al-based group III nitride single crystal layer to be formed, (2) the step of forming an Al-based group III nitride single crystal layer having a thickness of 10 nm to 1.5 mum on the single crystal plane of the provided base substrate, (3) the step of forming a non-single crystal layer having a thickness of not less than 100 times the thickness of the Al-based group III nitride single crystal layer on the Al-based group III nitride single crystal layer without breaking the Al-based group III nitride single crystal layer, and (4) the step of removing the base substrate. The production process can provide a substrate that is suitable for use as a base substrate for the production of a self-supporting substrate of an Al-based group III nitride single crystal, has a surface formed of a single crystal of an Al-based group III nitride, and is free from cracking and warpage.

Description

technical field [0001] The present invention relates to a method for producing a substrate composed of a single crystal of an Al-based group III nitride such as aluminum nitride. Background technique [0002] Aluminum nitride (AlN) is expected to contain a mixture of AlN, gallium nitride (GaN) and indium nitride (InN), which are also group III nitrides, because of its high forbidden band width of 6.2 eV and a direct transition type semiconductor. In particular, mixed crystals (hereinafter also referred to as Al-based group III nitride single crystals) in which the proportion of Al in group III elements is 50 atomic % or more are used as materials for ultraviolet light emitting elements. [0003] In order to form a semiconductor element such as an ultraviolet light emitting element, a laminated structure including a cap layer, an active layer, etc. must be formed between the n-type semiconductor layer electrically bonded to the n electrode and the p-type semiconductor layer e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B25/18
CPCC30B29/403H01L33/0075C30B25/183H01L2924/0002H01L2924/00
Inventor 永岛彻箱守明高田和哉石附正成纐纈明伯熊谷义直
Owner NAT UNIV CORP TOKYO UNIV OF AGRI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap