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Manufacture method of electrode of solar battery

The technology of a solar cell and its manufacturing method, which is applied in the field of solar cells, can solve problems such as complex manufacturing, inconvenient operation of replacing targets, poor process adjustability, etc., and achieve the effect of strong controllability

Inactive Publication Date: 2011-02-02
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Generally, the doping concentration of AZO film directly affects the light transmission and electrical properties of the film. However, for the AZO film produced by sputtering, the doping concentration is determined by the composition of the target, such as alloy target (Al, Zn) Or oxide ceramic target (Al 2 o 3 , the content of Al in ZnO) determines the concentration of Al impurity forming the AZO film. If it is necessary to adjust the doping concentration of the film or the type of doping element, the target material must be replaced, and the target material of the alloy target and the oxide ceramic target is usually complicated. , The cost is high, and the operation of replacing the target is inconvenient. Therefore, the process adjustability of the above method is poor and the process window is relatively small

Method used

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  • Manufacture method of electrode of solar battery
  • Manufacture method of electrode of solar battery
  • Manufacture method of electrode of solar battery

Examples

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Embodiment 1

[0046] Figure 4 It is a flow chart of the electrode manufacturing method of the thin film solar cell in the present embodiment, Figure 5 to Figure 6 is a schematic diagram of the method.

[0047] like Figure 4 As shown, the preparation method includes:

[0048] Step S1: Depositing an intrinsic zinc oxide film on the substrate;

[0049] Step S2: Doping the intrinsic zinc oxide film to form a doped zinc oxide film.

[0050] Specifically, such as Figure 5 As shown, the substrate in this embodiment is a glass substrate 301, and an intrinsic zinc oxide film (without impurities) 302 is deposited on the glass substrate 301 by CVD. The film itself prepared by the CVD method has a certain amount of fluff. The surface 304 can achieve a good suede surface and improve the light-harvesting effect without the need for a suede-making process; then, as Image 6 As shown, the intrinsic zinc oxide film 302 is doped by an ion implantation process or a diffusion process to form a doped ...

Embodiment 2

[0058] Figure 7 It is a flow chart of the electrode manufacturing method of the thin film solar cell in the present embodiment, Figure 8 to Figure 10 is a schematic diagram of the method.

[0059] like Figure 7 Shown, the electrode manufacturing method of described thin-film solar cell comprises:

[0060] Step A1: Depositing an intrinsic zinc oxide film on the substrate;

[0061] Step A2: Texturing the intrinsic zinc oxide film;

[0062] Step A3: Doping the intrinsic zinc oxide film to form a doped zinc oxide film.

[0063] Specifically, such as Figure 8 As shown, the substrate is a glass substrate 401, and an intrinsic zinc oxide film 402 is deposited on the glass substrate 401 by Physical Vapor Deposition (Physical Vapor Deposition, PVD). The PVD method is, for example, magnetron sputtering. Pure zinc oxide ceramic target; then, as Figure 9 As shown, a uniform textured surface 404 is formed on the surface of the intrinsic zinc oxide film 402 by chemical texturing...

Embodiment 3

[0068] Figure 11 It is a flow chart of the electrode manufacturing method of the thin film solar cell in the present embodiment, Figure 12 to Figure 14 is a schematic diagram of the method.

[0069] like Figure 11 Shown, the electrode manufacturing method of described thin-film solar cell comprises:

[0070] Step B1: forming a barrier layer on the substrate;

[0071] Step B2: depositing an intrinsic zinc oxide film on the barrier layer;

[0072] Step B3: Texturing the intrinsic zinc oxide film;

[0073] Step B4: Doping the intrinsic zinc oxide film to form a doped zinc oxide film.

[0074] Specifically, such as Figure 12 As shown, the substrate is a glass substrate 501, and a barrier layer 502 is formed on the glass substrate. The barrier layer 502 includes one or more of silicon oxide, silicon nitride, and silicon oxynitride, and can be deposited by CVD or PVD. ; then, if Figure 13 As shown, the intrinsic zinc oxide film 503 is deposited on the barrier layer 502 ...

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Abstract

The invention provides a manufacture method of an electrode of a solar battery, which comprises the following steps of: depositing an intrinsic zinc oxide film on a substrate; and doping the intrinsic zinc oxide film to form into a doped zinc oxide film. The step of doping adopts an ion implanting technology or an ion diffusing technology. The ion implanting technology comprises the following steps of: injecting the adulterant into the intrinsic zinc oxide film, and thermally treating the injected film. The substrate is the glass substrate, and the doped zinc oxide film is the front electrode. The manufacture method of the electrode of the solar battery divides the depositing technology and the doping technology of the intrinsic zinc oxide film into two steps of: depositing the film and doping. Therefore, the doping concentration or the doping element type of the film is not depended on a target material, and the doping concentration and the doping element type can be conveniently adjusted within a wider range, so that the manufacture method improves the adjustability of the manufacture technology of the doped zinc oxide film, and enlarges the technical window.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for manufacturing electrodes of solar cells. Background technique [0002] Zinc oxide (ZnO) is an important functional material with properties such as electrical conductivity, photoconductivity, piezoelectricity, acousto-optic, luminescence, gas sensing and chemical catalysis. The production process of zinc oxide film can be adjusted and controlled in a wide range, and the zinc oxide film produced under different conditions has different functions. Usually, doping aluminum, indium, fluorine, boron, arsenic, cadmium or gallium and other impurities into the zinc oxide film can effectively improve the electrical conductivity and light transmittance of the film and improve its performance. Therefore, doped zinc oxide thin films are widely used in the front electrode and back electrode processes of thin film solar cells. [0003] figure 1 It is a structural schematic ...

Claims

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Application Information

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IPC IPC(8): H01L31/20H01L31/18H01L31/0224
CPCY02P70/50
Inventor 吴桂龙
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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