Method for enhancing radiation resistant characteristic of LDMOS (Laterally Diffused Metal Oxide Semiconductor)

Abstract

The invention provides a method for enhancing the radiation resistant characteristic of an LDMOS (Laterally Diffused Metal Oxide Semiconductor), belonging to the technical field of radiation resistance of an integrated circuit and aiming at the conventional LDMOS transistor structure of a radio-frequency power device. The method is characterized in that materials selected by and used for a drift region STI dielectric layer and a device isolation region dielectric layer of an N type LDMOS transistor are different from the materials selected by and used for a drift region STI dielectric layer and a device isolation region dielectric layer of a P type LDMOS transistor; the drift region STI dielectric layer and a device isolation region of the N type LDMOS transistor select and use the materials which are easier to trap electrons after being radiated; and the filling materials of the drift region STI dielectric layer and the device isolation region dielectric layer of the P type LDMOS transistor are materials which are easier to trap cavities. The invention is used for the radiation resistant design of a semiconductor device and the integrated circuit and can enhance the radiation resistant capability of the integrated circuit and reduce the strengthening cost.

Description

technical field [0001] The invention relates to integrated circuit anti-irradiation technology, in particular to a method for improving the anti-irradiation performance of power device LDMOS. Background technique [0002] With the development of radio frequency integrated circuits and the continuous increase of the wireless communication market, more and more attention has been paid to radio frequency power devices in wireless communication such as personal / family wireless communication equipment, mobile communication equipment and even military radar. getting bigger. In the transceiver system of the radio frequency circuit, the power amplifier is a very important part. Power amplifiers are usually required to process large signals and require good stability, which requires the core power components of the circuit to have good high voltage resistance and reliability. The lateral double-diffused LDMOS transistor based on silicon material has the advantages of high breakdown...

AI Technical Summary

Problems solved by technology

However, since the structure introduces the STI dielectric region in the drift region, holes will be trapped after being irradiated, which increases the electric field, reduces the breakdown voltage of the device, and leads to performance degradation, which seriously affects the performance of the device and the circuit. Reliability under space radiation environment

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