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Preparation method of color-tunable mixed white organic luminescent device

A technology for organic light-emitting devices and white light, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., to achieve the effects of simple preparation process, cost reduction, and large-scale production.

Inactive Publication Date: 2011-06-15
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Searching the existing literature and patents, it is not found that the parallel connection of the fluorescent layer and the phosphorescent layer is used to achieve high-efficiency white light emission and adjustable white light color temperature by changing the luminous intensity of the fluorescent layer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The indium tin oxide semiconductor transparent film (ITO) film on the glass substrate is used as the anode, and is washed with acetone, absolute ethanol, and deionized water in an ultrasonic cleaner, and dried.

[0033] Dissolve 98 mg of 3DTAPBP and 5 mg of F4-TCNQ in 5 ml of tetrahydrofuran (THF), respectively, and sonicate the solution for 15 minutes in an ultrasonic cleaner to accelerate dissolution. Take 2 ml of F4-TCNQ solution and mix it with 3DTAPBP solution, after mixing, the solution is sonicated in an ultrasonic cleaner for 15 minutes to accelerate the dissolution. 98 mg of TCTA was dissolved in 5 mL of tetrahydrofuran (THF), and the solution was sonicated in an ultrasonic cleaner for 15 minutes to accelerate dissolution. 5 mg Ir(MDQ) 2 (acac) 2 and Ir(ppy) 3 , were dissolved in 5 ml of tetrahydrofuran (THF), and the solution was sonicated in an ultrasonic cleaner for 15 minutes to accelerate the dissolution.

[0034] Take 1ml of Ir(MDQ) respectively 2 (a...

Embodiment 2

[0037] The indium tin oxide semiconductor transparent film (ITO) film on the glass substrate is used as the anode, and is washed with acetone, absolute ethanol, and deionized water in an ultrasonic cleaner, and dried.

[0038] Dissolve 98 mg of 3DTAPBP and 5 mg of F4-TCNQ in 5 ml of tetrahydrofuran (THF), respectively, and sonicate the solution for 15 minutes in an ultrasonic cleaner to accelerate dissolution. Take 2 ml of F4-TCNQ solution and mix it with 3DTAPBP solution, after mixing, the solution is sonicated in an ultrasonic cleaner for 15 minutes to accelerate the dissolution. 98 mg of TCTA was dissolved in 5 mL of tetrahydrofuran (THF), and the solution was sonicated in an ultrasonic cleaner for 15 minutes to accelerate dissolution. 5 mg Ir(MDQ) 2 (acac) 2 and Ir(ppy) 3 , were dissolved in 5 ml of tetrahydrofuran (THF), and the solution was sonicated in an ultrasonic cleaner for 15 minutes to accelerate the dissolution.

[0039] Take 1ml of Ir(MDQ) respectively 2 (a...

Embodiment 3

[0042] The indium tin oxide semiconductor transparent film (ITO) film on the glass substrate is used as the anode, and is washed with acetone, absolute ethanol, and deionized water in an ultrasonic cleaner, and dried.

[0043] Dissolve 98 mg of 3DTAPBP and 5 mg of F4-TCNQ in 5 ml of tetrahydrofuran (THF), respectively, and sonicate the solution for 15 minutes in an ultrasonic cleaner to accelerate dissolution. Take 2 ml of F4-TCNQ solution and mix it with 3DTAPBP solution, after mixing, the solution is sonicated in an ultrasonic cleaner for 15 minutes to accelerate the dissolution. 98 mg of TCTA was dissolved in 5 mL of tetrahydrofuran (THF), and the solution was sonicated in an ultrasonic cleaner for 15 minutes to accelerate dissolution. 5 mg Ir(MDQ) 2 (acac) 2 and Ir(ppy) 3 , were dissolved in 5 ml of tetrahydrofuran (THF), and the solution was sonicated in an ultrasonic cleaner for 15 minutes to accelerate the dissolution.

[0044] Take 1ml of Ir(MDQ) respectively 2 (a...

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Abstract

The invention provides a preparation method of a color-tunable mixed white organic luminescent device. The method comprises the following steps: by using a transparent thin film of an indium tin oxide semiconductor on a glass substrate as an anode, dissolving a dopant carrier and different colored phosphorescent dopants respectively in an organic solvent for a yellow phosphorescent light-emitting layer; dissolving vacancy transport substances and electronic transport substances with P-type and N-type dopants respectively in the organic solvent; depositing a vacancy excitation layer, a vacancy transport layer, the yellow light-emitting layer and an electron transport layer through a spin coating method; crosslinking various organic layers deposited by spin coating through a heating method; preparing a transparent cathode through a vacuum thermal evaporation method; depositing the electron transport layer, a blue phosphorescent light-emitting layer and the vacancy transport layer through the vacuum thermal evaporation method; depositing a reflecting anode through a magnetron sputtering method; and regulating a resistor connected in series with a blue phosphorescent transport layer through a slide-wire rheostat. The method ensures the preparation process to be simple and is beneficial to mass production, thereby reducing the cost.

Description

technical field [0001] The invention relates to a method for preparing a light-emitting device, in particular to a method for preparing a color-tunable mixed white light organic light-emitting device. Background technique [0002] Organic light-emitting diode (OLED0), as a new type of organic light-emitting device, has the advantages of high efficiency, simple structure and good substrate adaptability, and is recognized as a new type of light-emitting device that can represent the trend of lighting and display technology in the 21st century. Organic light-emitting devices are basically The structure is multi-layer type, generally including electron transport layer, emission layer, hole transport layer, etc., and the structure is very important in improving luminous efficiency and performance stability. For example, doped structure is the current development direction of organic light-emitting devices. [0003] The development of organic light-emitting diode technology has be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56C08L65/00C08L25/06
Inventor 牟海川毛启明姜来新
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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