Technology of preparing special-shaped cutting steel wire

Abstract

The invention relates to a technology of preparing special-shaped cutting steel wire, comprising the following steps: (1) coarse wire drawing, during which step the steel wire rod of Phi5.5-6.5mm is drawn into the steel wire of Phi2.80-3.25mm, (2) middle filament heat treatment, (3) intermediate drawing, during which step the steel wire of Phi2.80-3.25mm is drawn into the steel wire of Phi 0.76-1.15mm, (4) wet drawing, during which step the steel wire of Phi0.76-1.15mm is drawn into the steel wire of Phi0.08-0.3mm, (5) press rolling, during which step the steel wire is rolled into the steel wire having a cross section of polygon or ellipse, (6) electroplate/bonding, during which step SiC or diamond particle abrasive is fixed upon the external surface of the steel wire in an electroplating or glue-bonding manner, and (7) taking up, during which step the finished product is obtained. The preparing technology of the invention is simple, environment-friendly, efficient, and of low cost. The cutting steel wire prepared via this technology takes the shape of elliptic cylinder or polygon body, with hardness and tensile strength substantially improved, effectively decreasing the wire-broken rate, accelerating cutting speed of steel wire, and improving the cutting efficiency.

Description

[Technical field] [0001] The invention relates to a process for preparing a cutting wire in the field of photovoltaics or semiconductors, in particular to a process for preparing a special-shaped cutting wire. [Background technique] [0002] Compared with other cutting technologies, silicon crystal multi-wire cutting technology has the advantages of high efficiency, high productivity and high precision. At present, the multi-wire cutting of silicon crystals in China uses free abrasive multi-wire cutting, that is, the cutting wire carries the mortar to move at high speed, and the free abrasive in the mortar is driven by the pressure and speed of the cutting wire to grind the silicon material. Realize silicon crystal cutting. In this process, the cutting wire itself does not participate in the cutting. Since the actual contact area between the free abrasive in the mortar and the silicon material is small, the removal rate of the processed material is low, the processing time ...

AI Technical Summary

Problems solved by technology

In this process, the cutting wire itself does not participate in the cutting. Since the actual contact area between the free abrasive in the mortar and the silicon material is small, the removal rate of the processed material is low, the processing time is long, and the production efficiency is low.

For harder or more difficult materials, this free-abrasive multi-wire cutting wire is not up to the task

The multi-wire cutting wire that fixes the abrasive on the surface of the cutting steel wire can solve the above problems, but currently limited by the method of fixing the abrasive on the surface of the steel wire, the bonding strength between the abrasive and the steel wire is not high, and the life of the steel wire is also limited.

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