Method for preparing nitrogen-doped graphene material with hydrothermal process

[0012] Specific embodiment 1: In this embodiment, the method for preparing nitrogen-doped graphene material by hydrothermal method is completed by the following steps: 1. Add graphite oxide to the solvent, then add surfactant, and then use ultrasonic method or heating Mix uniformly by stirring to obtain mixture A, wherein the solvent is one or a mixture of several of water, methanol, ethanol, ethylene glycol, N,N-dimethylformamide, and the graphite oxide The mass ratio to the solvent is 1:100-2000, and the mass ratio of the surfactant to the graphite oxide is 0.01-50:1; 2. Then add a nitrogen-containing compound to the mixture A, wherein the nitrogen-containing compound and the graphite oxide The mass ratio is 10~500:1, and then the mixture B is uniformly mixed by the ultrasonic method or heating and stirring method; Third, the mixture B is subjected to a hydrothermal reaction, the hydrothermal reaction temperature is 100-190℃, and the hydrothermal reaction time is 4~48h, then washed with distilled water, ethanol or acetone, and then dried at 60~110℃ or vacuum dried at 60~80℃ for 6~8h; the nitrogen-doped graphene material is obtained.

[0013] In this embodiment, the solvents are mixtures, and the solvents are mixed at any ratio.

[0014] The nitrogen content of the nitrogen-doped graphene material prepared in this embodiment is between 10% and 19%, and the nitrogen content in the product can be controlled by changing the type and amount of nitrogen-containing compounds added. The yield of the nitrogen-doped graphene material prepared by the invention is above 98.9%.

[0015] Specific embodiment two: This embodiment is different from specific embodiment one in that: the surfactant in step one is cationic surfactant, anionic surfactant, nonionic surfactant and amphoteric surfactant. One kind. The other steps and parameters are the same as in the first embodiment.

[0016] Specific embodiment three: this embodiment is different from specific embodiment two in that: the cationic surfactant is cetyl trimethyl ammonium bromide, cetyl dimethyl benzyl ammonium bromide, Cetyl alcohol polyoxyethylene ether dimethyl octyl ammonium chloride, lauryl polyoxyethylene ether dimethyl methyl ammonium chloride, octyl phenol polyoxyethylene ether dimethyl decyl bromide Ammonium chloride, octylphenol polyoxyethylene ether dimethyl decyl ammonium chloride or cetyl alcohol polyoxyethylene ether dimethyl octyl ammonium chloride. The other steps and parameters are the same as in the second embodiment.