Method for preparing nitrogen-doped graphene material with hydrothermal process

A technology of nitrogen-doped graphene and hydrothermal method is applied in the field of preparation of nitrogen-doped graphene materials, which can solve the problems of complex equipment required for the reaction, difficult control of nitrogen content, harsh reaction conditions, etc., and achieves easy industrial production, The effect of low production cost and simple equipment

Inactive Publication Date: 2011-08-31
HEILONGJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve technical problems such as low nitrogen content, difficult control of nitrogen content, high production cost, complex equipment required for reaction, harsh reaction conditions, low ou

Method used

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  • Method for preparing nitrogen-doped graphene material with hydrothermal process
  • Method for preparing nitrogen-doped graphene material with hydrothermal process

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Example Embodiment

[0012] Specific embodiment 1: In this embodiment, the method for preparing nitrogen-doped graphene material by hydrothermal method is completed by the following steps: 1. Add graphite oxide to the solvent, then add surfactant, and then use ultrasonic method or heating Mix uniformly by stirring to obtain mixture A, wherein the solvent is one or a mixture of several of water, methanol, ethanol, ethylene glycol, N,N-dimethylformamide, and the graphite oxide The mass ratio to the solvent is 1:100-2000, and the mass ratio of the surfactant to the graphite oxide is 0.01-50:1; 2. Then add a nitrogen-containing compound to the mixture A, wherein the nitrogen-containing compound and the graphite oxide The mass ratio is 10~500:1, and then the mixture B is uniformly mixed by the ultrasonic method or heating and stirring method; Third, the mixture B is subjected to a hydrothermal reaction, the hydrothermal reaction temperature is 100-190℃, and the hydrothermal reaction time is 4~48h, then ...

Example Embodiment

[0015] Specific embodiment two: This embodiment is different from specific embodiment one in that: the surfactant in step one is cationic surfactant, anionic surfactant, nonionic surfactant and amphoteric surfactant. One kind. The other steps and parameters are the same as in the first embodiment.

Example Embodiment

[0016] Specific embodiment three: this embodiment is different from specific embodiment two in that: the cationic surfactant is cetyl trimethyl ammonium bromide, cetyl dimethyl benzyl ammonium bromide, Cetyl alcohol polyoxyethylene ether dimethyl octyl ammonium chloride, lauryl polyoxyethylene ether dimethyl methyl ammonium chloride, octyl phenol polyoxyethylene ether dimethyl decyl bromide Ammonium chloride, octylphenol polyoxyethylene ether dimethyl decyl ammonium chloride or cetyl alcohol polyoxyethylene ether dimethyl octyl ammonium chloride. The other steps and parameters are the same as in the second embodiment.

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Abstract

The invention discloses a method for preparing a nitrogen-doped graphene material with a hydrothermal process, relating to a method for preparing the nitrogen-doped graphene material. The technical problems of lower nitrogen content, difficulty in control of nitrogen content, high production cost, complex structure of equipment required by reaction, rigorous reaction conditions, low yield, difficulty in industrialized production and the like in the traditional method for preparing the nitrogen-doped graphene material are solved in the invention. The method comprises the steps of: 1, dissolving graphite oxide in a solvent, adding a surfactant and uniformly mixing; 2, adding a nitrogen-containing compound, and uniformly mixing; and 3, after a hydro-thermal reaction, washing and drying to obtain the nitrogen-doped graphene material. The nitrogen-doped graphene material prepared in the invention has the advantages of higher nitrogen content, controllable nitrogen content, low production cost, simple structure of required equipment, high yield and easiness in realizing industrialized production.

Description

technical field [0001] The invention relates to a preparation method of a nitrogen-doped graphene material. Background technique [0002] Graphene with a two-dimensional structure has excellent physical and chemical properties, and has important application value in fields such as field emission transistors, supercapacitors, and lithium-ion batteries. However, nitrogen doping is very important for tuning the electronic structure of graphene. Nitrogen-doped graphene has important applications in supercapacitors, fuel cells and other fields. Therefore, in order to meet the needs of different fields, the design and synthesis of nitrogen-doped two-dimensional materials is very necessary. The traditional method for preparing nitrogen-doped graphene mainly contains: (1) in the process of preparing graphene by chemical vapor deposition (CVD), feed ammonia gas simultaneously and carry out nitrogen doping, and the highest nitrogen content is 5%; ( 2) In the process of preparing gr...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 付宏刚孙立王蕾田春贵穆光田国辉
Owner HEILONGJIANG UNIV
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