Supercharge Your Innovation With Domain-Expert AI Agents!

Method for preparing nitrogen-doped graphene material with hydrothermal process

A technology of nitrogen-doped graphene and hydrothermal method is applied in the field of preparation of nitrogen-doped graphene materials, which can solve the problems of complex equipment required for the reaction, difficult control of nitrogen content, harsh reaction conditions, etc., and achieves easy industrial production, The effect of low production cost and simple equipment

Inactive Publication Date: 2011-08-31
HEILONGJIANG UNIV
View PDF2 Cites 108 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to solve technical problems such as low nitrogen content, difficult control of nitrogen content, high production cost, complex equipment required for reaction, harsh reaction conditions, low output and difficulty in industrialized production existing in the existing preparation method of nitrogen-doped graphene material; Thereby providing a method for preparing nitrogen-doped graphene materials by hydrothermal method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nitrogen-doped graphene material with hydrothermal process
  • Method for preparing nitrogen-doped graphene material with hydrothermal process

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0012] Specific embodiment one: the method for preparing nitrogen-doped graphene material by hydrothermal method in this embodiment is completed by the following steps: one, add graphite oxide in the solvent, then add surfactant, then use ultrasonic method or heating Mix uniformly by stirring to obtain mixture A, wherein the solvent is one or a mixture of several of water, methanol, ethanol, ethylene glycol, N,N-dimethylformamide, and the graphite oxide The mass ratio with solvent is 1:100~2000, and the mass ratio of described surfactant and graphite oxide is 0.01~50:1; Two, then add nitrogen-containing compound in mixture A, wherein nitrogen-containing compound and graphite oxide The mass ratio is 10 to 500:1, and then the mixture is uniformly mixed by ultrasonic method or heating and stirring method to obtain the mixture B; 3. The mixture B is subjected to hydrothermal reaction, the hydrothermal reaction temperature is 100~190°C, and the hydrothermal reaction time is 4-48 ho...

specific Embodiment approach 2

[0015] Specific embodiment two: the difference between this embodiment and specific embodiment one is: the surfactant described in step one is cationic surfactant, anionic surfactant, nonionic surfactant and amphoteric surfactant A sort of. Other steps and parameters are the same as in the first embodiment.

specific Embodiment approach 3

[0016] Specific embodiment three: this embodiment is different from specific embodiment two in that: the cationic surfactant is cetyl trimethyl ammonium bromide, cetyl dimethyl benzyl ammonium bromide, Cetyl alcohol polyoxyethylene ether group dimethyl octyl ammonium chloride, lauryl alcohol polyoxyethylene ether group dimethyl methyl ammonium chloride, octylphenol polyoxyethylene ether group dimethyl decyl bromide ammonium chloride, octylphenol polyoxyethylene ether dimethyl decyl ammonium chloride or cetyl alcohol polyoxyethylene ether dimethyl octyl ammonium chloride. Other steps and parameters are the same as in the second embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a nitrogen-doped graphene material with a hydrothermal process, relating to a method for preparing the nitrogen-doped graphene material. The technical problems of lower nitrogen content, difficulty in control of nitrogen content, high production cost, complex structure of equipment required by reaction, rigorous reaction conditions, low yield, difficulty in industrialized production and the like in the traditional method for preparing the nitrogen-doped graphene material are solved in the invention. The method comprises the steps of: 1, dissolving graphite oxide in a solvent, adding a surfactant and uniformly mixing; 2, adding a nitrogen-containing compound, and uniformly mixing; and 3, after a hydro-thermal reaction, washing and drying to obtain the nitrogen-doped graphene material. The nitrogen-doped graphene material prepared in the invention has the advantages of higher nitrogen content, controllable nitrogen content, low production cost, simple structure of required equipment, high yield and easiness in realizing industrialized production.

Description

technical field [0001] The invention relates to a preparation method of a nitrogen-doped graphene material. Background technique [0002] Graphene with a two-dimensional structure has excellent physical and chemical properties, and has important application value in fields such as field emission transistors, supercapacitors, and lithium-ion batteries. However, nitrogen doping is very important for tuning the electronic structure of graphene. Nitrogen-doped graphene has important applications in supercapacitors, fuel cells and other fields. Therefore, in order to meet the needs of different fields, the design and synthesis of nitrogen-doped two-dimensional materials is very necessary. The traditional method for preparing nitrogen-doped graphene mainly contains: (1) in the process of preparing graphene by chemical vapor deposition (CVD), feed ammonia gas simultaneously and carry out nitrogen doping, and the highest nitrogen content is 5%; ( 2) In the process of preparing gr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B31/04
Inventor 付宏刚孙立王蕾田春贵穆光田国辉
Owner HEILONGJIANG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com