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Method and device for preparing zinc cadmium sulfide selenide nanowires with fluorescence changing from ultraviolet to red

A technology of cadmium sulfur selenide and zinc nanowires, which is applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of limited application, fluorescence cannot be continuously and monotonously changed, and achieve constant vacuum change effect

Inactive Publication Date: 2012-11-14
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method can obtain all spectra of fluorescence from ultraviolet to red, but each spectrum can only be obtained on one material, that is, the fluorescence of a single nanomaterial obtained cannot be continuously monotonously changed, which limits its application

Method used

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  • Method and device for preparing zinc cadmium sulfide selenide nanowires with fluorescence changing from ultraviolet to red
  • Method and device for preparing zinc cadmium sulfide selenide nanowires with fluorescence changing from ultraviolet to red
  • Method and device for preparing zinc cadmium sulfide selenide nanowires with fluorescence changing from ultraviolet to red

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Get zinc sulfide 0.8g and put it into the first container 12, get cadmium selenide 0.4g and put it into the second container 13, the mass ratio of zinc sulfide and cadmium selenide is 2: 1, the first container 12 and The second container 13 is installed on the connecting rod 11, and the growth carrier is placed on the carrier platform 14. The growth carrier in this embodiment is a gold-plated silicon wafer, and the gold-plated thickness of the gold-plated silicon wafer is 5 nm. Adjust the positions of the first container 12, the second container 13 and the carrier platform 14, set the preparation temperature of zinc sulfide to 1000°C, and set the preparation temperature of cadmium selenide to 800°C. Vacuumize to keep the vacuum degree of the preparation environment in the box at 1.3kPa, and keep the nitrogen flow in the preparation environment at 100ml / min during the preparation process.

[0036] Turn on the high-temperature furnace 16 to heat, so that the temperature a...

Embodiment 2

[0040] The amount of zinc sulfide and cadmium selenide used in this example is both 0.3g, and the preparation temperature of zinc sulfide is 950°C, the preparation temperature of cadmium selenide is 750°C, and the carrier adopts a gold-plated silicon chip with a surface gold-plated thickness of 8nm. The vacuum degree of the preparation environment is 1.2kPa, and the nitrogen gas flow of the preparation environment is maintained at 100ml / min during the preparation process; heating, so that the temperature of the zinc sulfide reaches 950°C from room temperature 20°C in 18 minutes, correspondingly, at this time, the selenium The temperature of cadmium is 750°C, and the temperature at the high temperature end of the growth area is 900°C; after the temperature is reached, keep the position of the gold-plated silicon wafer unchanged for 9 minutes, and then move the gold-plated silicon wafer from the high-temperature end of the growth area at a speed of 1 cm / min. Move to the cooler en...

Embodiment 3

[0042] The amount of zinc sulfide and cadmium selenide used in this example is 1g and 0.2g respectively, and the preparation temperature of zinc sulfide is 900°C, the preparation temperature of cadmium selenide is 600°C, and the surface of the carrier is gold-plated with a thickness of 2nm. Ceramic sheet; the vacuum degree of the preparation environment is 30kPa, and the nitrogen flow of the preparation environment is kept at 500ml / min during the preparation process; heating, so that the temperature of zinc sulfide reaches from room temperature 20°C to 900°C in 30 minutes, correspondingly, at this time The temperature of cadmium selenide is 600°C, and the temperature at the high temperature end of the growth area is 900°C; after the temperature is reached, keep the position of the gold-plated ceramic sheet unchanged for 5 minutes, and then move the gold-plated silicon sheet from the high temperature of the growth area at a speed of 2cm / min. end to the lower end. The other prep...

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Abstract

The invention discloses a method and device for preparing zinc cadmium sulfide selenide nanowires with fluorescence changing from ultraviolet to red. The method is characterized by adopting high temperature to volatilize zinc sulfide in a zinc sulfide volatilization region and cadmium selenide in a cadmium selenide volatilization region, adopting a sedimentation method to grow zinc cadmium sulfide selenide nanowires on a growth carrier in a growth region in the environments of certain vacuum and airflow and ensuring the ratio of such components of the nanowires as the zinc sulfide and the cadmium selenide to continuously change from 1:0 to 0:1 through movement of the growth carrier in the growth region. The device comprises a high temperature furnace, a box body, a vacuum pump, a gas cylinder and a moving device, wherein a connecting lever suspending in the box body is arranged inside the box body; two containers are arranged on the connecting lever; a carrier platform installed on the box body is arranged at the same side of the two containers; and the moving device can be utilized to move the box body and the carrier platform at certain speed. The fluorescence spectra of the zinc cadmium sulfide selenide nanowires prepared by the method and device can continuously change from ultraviolet to red in a monotone manner.

Description

technical field [0001] The invention relates to a method and a device for preparing cadmium zinc selenide nanowires, in particular to a method and a device for preparing zinc cadmium sulfur selenide nanowires whose fluorescence changes monotonously and continuously from ultraviolet to red. Background technique [0002] Nanowires are currently one of the research hotspots in the fields of materials, chemistry, optoelectronics and nanotechnology. Semiconductor nanowires, because of their excellent physical properties, are widely used in sensing, laser, waveguide, optoelectronic devices and other fields, and have received extensive attention. Since the functionality and performance of these devices depend largely on the band structure of the nanowires, band tuning on a single nanowire is one of the research goals of these functional materials. II-IV compound is a kind of tunable wide bandgap semiconductor material, such as cadmium sulfide selenide can adjust the bandgap by cha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/48H01L31/0296H01L31/18
CPCY02P70/50
Inventor 童利民杨宗银
Owner ZHEJIANG UNIV
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