Ceramic copper-clad substrate and preparation method thereof

A ceramic copper clad and ceramic substrate technology, applied in the field of ceramic metallization, can solve the problems of difficult to achieve good bonding between copper foil and ceramic substrate, and achieve the advantages of eliminating post-processing technology, large contact surface, and enhanced bonding strength Effect

Active Publication Date: 2011-10-05
HUAWEI TEHCHNOLOGIES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The present invention aims to solve the technical problem that the preparation method of the ceramic copper-clad substrate in the prior art is difficult to achieve good bonding of the copper foil and the ceramic substrate

Method used

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  • Ceramic copper-clad substrate and preparation method thereof

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preparation example Construction

[0025] The invention provides a method for preparing a ceramic copper-clad substrate, the method comprising the following steps:

[0026] Step 1. Degreasing and removing the oxide layer on the copper foil: 1) Put the copper foil in a 1% to 3% alkaline solution, soak it at a temperature of 40 to 80°C for 5 to 20 minutes, and perform saponification and degreasing , the alkaline solution can be NaOH, Na 2 CO 3 、Na 2 PO 4 One or several kinds of alkaline solutions; then soak the copper foil in an organic solvent, ultrasonically clean it for 2-10 minutes, and carry out emulsification and degreasing. The organic solvent can be acetone, ethanol, diesel oil, gasoline and other organic solvents One or more of them; then rinse the copper foil with clean water. 2) Put the degreased copper foil into 5%~20% H 2 SO 4 Or ultrasonic cleaning in HCl solution for 2 to 10 minutes to remove the oxide layer on the surface of the copper foil. The oxide layer is a thin layer of copper oxide, c...

Embodiment 1

[0034] 1) Cut the standard copper foil (Datong Co., TU0) into a copper foil with a size of 34mm×34mm, soak it in a 1% NaOH solution at 50°C for 10 minutes, and then transfer it to an acetone solvent for ultrasonic cleaning for 5 minutes , to remove the oil on the surface of the copper foil, and then transfer the copper foil to 5% H 2 SO 4 Ultrasonic cleaning in the solution for 5 minutes to remove the oxide layer on the surface of the copper foil, and then rinse the copper foil with water.

[0035] 2) Take two pieces of copper foil, coat one surface of one copper foil with PVC adhesive and cure it to form an organic protective layer, and then connect it with an electrolytic power supply (Guangzhou Erqing Research Institute, STP-10A / 12V.S) The cathode connection of another piece of copper foil is connected to the anode of the power supply, and then the two pieces of copper foil are placed opposite and immersed in 0.02mol / l (CH3COO) 2 Cu and 0.1mol / l CH 3 In the electrolyte s...

Embodiment 2

[0038] In this embodiment, the electrolysis voltage in the electrochemical deposition is adjusted to be 0.25V for electrochemical deposition, and the current is recorded at the same time. The deposition time is 80min. Other steps and parameters are the same as in Example 1. After the electrochemical deposition, the electrode connected to the cathode On the other surface of the copper foil is formed a cuprous oxide (Cu 2 O) layer, it can be seen that the deposition thickness of the cuprous oxide layer can be controlled by changing the electrochemical parameters (electrolysis voltage and deposition time).

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Abstract

The invention provides a preparation method for a ceramic copper-clad substrate. The preparation method comprises the following steps: carrying out a pre-processing for copper foil, wherein one side of the copper foil is a bonding surface for bonding with a ceramic substrate, the other side is a non-bonding surface; forming an organic protection layer on the non-bonding surface of the copper foil; carrying out a electrochemical deposition process for the copper foil to form a cuprous oxide layer on the bonding surface of the copper foil in a Cu<2+> electrolyte solution; removing the organic protection layer on the non-bonding surface of the copper foil; superimposing the bonding surface with the cuprous oxide layer and the preprocessed ceramic substrate, followed by a bonding process. In addition, the invention further provides a ceramic copper-clad substrate. With the present invention, the uniform and dense cuprous oxide layer on the bonding surface of the copper foil is formed through the electrochemical deposition method, and the cuprous oxide layer does not contain copper oxide causing generation of tiny bubbles, such that the bonding surface of the copper foil and the ceramic can forms a good bonding during a bonding process so as to great improve bond strength of the copper foil and the ceramic substrate.

Description

technical field [0001] The invention relates to the field of ceramic metallization, in particular to a ceramic copper-clad substrate and a preparation method thereof. Background technique [0002] In the development process of semiconductor modules, with the improvement of integration and the reduction of volume, the power consumption per unit heat dissipation area increases, and heat dissipation has become a key issue in the manufacture of semiconductor modules; at the same time, due to the reliability and environmental protection It has attracted much attention, and the industry generally puts forward performance requirements such as high thermal conductivity, high reliability, and low environmental pollution for circuit substrate materials of semiconductor modules. [0003] The traditionally used BeO circuit substrate material will produce toxic dust during the production process, which has strict requirements on the operating environment; while the SiC circuit substrate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/88H01L21/48H01L23/15
Inventor 张保祥林信平任永鹏
Owner HUAWEI TEHCHNOLOGIES CO LTD
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