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Mixed structure thin-film transistor taking oxide semiconductor as channel layer

An oxide semiconductor, thin film transistor technology, applied in transistors, semiconductor devices, electrical components, etc., can solve the problems of unsuitable flexible display screens, high dielectric layer process temperature, good electrical performance, easy low temperature and large area preparation, The effect of good application prospects

Inactive Publication Date: 2011-10-19
FUDAN UNIV
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  • Abstract
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Problems solved by technology

Figure 1c The structure shown is a transparent oxide semiconductor thin film transistor (TOS-TFT) device, which uses an oxide semiconductor channel layer and an inorganic dielectric layer, but the main problem is that the process temperature of the dielectric layer is relatively high compared to the organic substrate. Too tall for flexible displays

Method used

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  • Mixed structure thin-film transistor taking oxide semiconductor as channel layer
  • Mixed structure thin-film transistor taking oxide semiconductor as channel layer
  • Mixed structure thin-film transistor taking oxide semiconductor as channel layer

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[0022] The indium-zinc alloy target (In:Zn=0.586:1 atomic ratio) is selected, and the reaction chamber is vacuumed to below 2×10-3Pa before a-IZO film deposition, and then the O 2 and Ar gas are passed into the reaction chamber in sequence, and the oxygen partial pressure in the reaction chamber is controlled to be 5.0×10 -2 Pa, the working pressure is 3.0×10 -1 Pa. The sputtering current and the sputtering voltage were adjusted to 120mA and 300V respectively, and the sputtering time was 10 minutes to form a thin film on a common glass sheet. The thickness of the film is about 110nm, and the resistivity is greater than 1×10 4 Ω·cm, the average transmittance of visible light is greater than 82%.

[0023] 80nm aluminum films were prepared as source-drain electrodes by reactive magnetron sputtering with aluminum oxide masks with aspect ratios of 500μm / 100μm and 400μm / 40μm. The sputtering current was 100mA and the sputtering voltage was 350V.

[0024] A 20 mg / ml polytetravinyl...

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Abstract

The invention belongs to the technical field of thin-film transistors, and relates to a mixed structure thin-film transistor taking an oxide semiconductor as a channel layer. In the transistor, the mixed structure thin-film transistor structure is formed by taking an oxide semiconductor film as a channel layer, an organic dielectric film is taken as a gate medium layer, and transparent conductive oxide films are taken as a gate electrode, a source electrode and a drain electrode. In the thin-film transistor, a glass or flexible substrate is taken as a substrate, a high-gap oxide semiconductor channel layer is prepared with a vacuum coating technology, an organic medium layer is prepared by a spin-coating method or dipping and drawing method, and the gate electrode, the source electrode and the drain electrode of the transparent conductive oxide films are prepared by a vacuum coating method. The mixed structure thin-film transistor prepared by the invention has the advantages of low preparation temperature, high carrier migration rate, high current on / off ratio, and the like, and has good application potential in the field of panel display, transparent electronics, and the like.

Description

technical field [0001] The invention belongs to the technical field of thin film transistors, and in particular relates to a mixed structure thin film transistor structure using an oxide semiconductor as a channel layer. Background technique [0002] A thin film transistor (Thin Film Transistor: TFT) is a field effect transistor (Field Effect Transistor: FET), which consists of a semiconductor active layer, namely a channel layer, a dielectric layer, namely an insulating layer, a gate electrode, a source electrode and a drain electrode. Field-effect transistors are widely used in various electronic circuits due to their small size, light weight, long life, and low power consumption. In the 1960s, based on the actual demand for low-cost, large-array displays, research on TFTs was widely developed. In 1988, when the first 14-inch Active-Matrix (Active-Matrix: AM) Thin Film Transistor Liquid Crystal Displays (Thin FilmTransistor Liquid Crystal Displays: TFT-LCD) appeared, peop...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L29/12H01L29/51
Inventor 张群李桂锋冯佳涵周俊
Owner FUDAN UNIV
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