CdTe solar cell by using V-Se film as back contact layer

A technology for solar cells and vanadium selenide, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex composition and structure of tellurium-copper phase, battery performance degradation, etc.

Inactive Publication Date: 2011-11-16
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For conventional CdTe solar cells, copper or copper-containing materials are used for the back contact layer, but the following problems will occur: for Cu, it often reacts with the uneven Te-rich layer after corrosion to produce a tellurium-copper phase with complex composition and structure; for copper-containing materials : such as ZnTe:Cu, HgTe:Cu, Cu x Te (1≤x≤2), due to the diffusion of metal ions or impurities along the grain boundaries, the battery performance declines

Method used

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  • CdTe solar cell by using V-Se film as back contact layer
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  • CdTe solar cell by using V-Se film as back contact layer

Examples

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Effect test

Embodiment 1

[0018] (1) Preparation of V-Se thin film

[0019] Put the sample into the vacuum chamber with a vacuum of 10 -4 pa, the sample temperature is room temperature, and the electron beam evaporation method is used to alternately evaporate vanadium and selenium, wherein the purity of vanadium is 99.999%, and the purity of selenium is 99.97%. The thickness of deposited vanadium is 1~10 nm, the thickness ratio of vanadium and selenium is 0.26, and the total thickness of V-Se film is 80 nm;

[0020] (2) Post-treatment V-Se thin film

[0021] Take out the sample deposited with V-Se thin film, put it into a vacuum annealing furnace protected by nitrogen or inert gas, and carry out post-treatment at a temperature of 250 0 C~300 0 C, the time is 10~60 minutes, and then naturally cooled to room temperature, that is, to obtain VSe 2-x (x=0) Sample of thin film.

Embodiment 2

[0023] (1) Preparation of V-Se thin film

[0024] Put the sample into the vacuum chamber with a vacuum of 10 -4 pa, the sample temperature is 300 0 C, using the electron beam evaporation method to alternately evaporate vanadium and selenium, wherein the purity of vanadium is 99.999%, and the purity of selenium is 99.97%. The thickness of deposited vanadium is 1~10 nm, the thickness ratio of vanadium and selenium is 0.26, and the total thickness of V-Se film is 100 nm;

[0025] (2) Post-treatment V-Se thin film

[0026] In a vacuum chamber, keep the sample warm for 10-60 minutes, and then naturally cool to room temperature, that is, to obtain 2-x (x=0) Sample of thin film.

Embodiment 3

[0028] (1) Install the target and sample

[0029] Fix the vanadium target (purity 99.99% and above) and the selenium target (purity 99.99% and above) on the two target positions corresponding to the sputtering device, fix the sample on the substrate position, and adjust the target and substrate. The distance is 6~9 cm;

[0030] (2) Preparation of V-Se thin film

[0031] In-situ growth of V-Se thin film, that is, first heating the sample temperature to 300 0 C, followed by co-sputtering vanadium and selenium to obtain V-Se thin films, in which the background vacuum ~10 -4 Pa, the working gas is argon, the working pressure is 0.1~3.5 Pa, the sputtering power of vanadium target is 30~300 W, the sputtering power of selenium target is 30~100 W, the sputtering rate V / Se is 0.26~0.27, and the sputtering thickness is 70 nm;

[0032] (3) Post-treatment V-Se thin film

[0033] After the sputtering is completed, keep the pressure in the sputtering chamber for 10-60 minutes under th...

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Abstract

The invention aims to eliminate the defects of copper or back contact layer materials containing copper in a CdTe cell and avoid the negative influence of copper diffusion on the performance of the CdTe solar cell. A copper-free V-S material is added between an absorbing layer and a metal back electrode in the basic structure of the CdTe solar cell and is taken as a back contact layer of the CdTe solar cell, thus an ohmic contact of the CdTe solar cell can be realized, the depletion region of the solar cell can be widened, the interface recombination can be reduced, the bypass resistance can be increased, the filling factor can be increased and the conversion efficiency can be improved. Since an acceptor doping agent, such as copper, is not used in the invention, the cell does not have attenuation after being used or stored for a long term, and the device has good stability.

Description

technical field [0001] The invention belongs to the field of new energy materials and devices, and in particular relates to a preparation method of a cadmium telluride thin film solar cell. Background technique [0002] Because CdTe has a high absorption coefficient and an optimal energy gap suitable for solar energy conversion, CdTe, as an important photoelectric conversion material in the field of photovoltaics, has attracted widespread attention and attention. It forms a CdS / CdTe heterojunction solar cell with wide-gap CdS (~2.42 eV), which has a theoretical conversion efficiency close to 30%. At present, the efficiency of small-area cells in the laboratory has exceeded 16%, and the efficiency of commercial components has reached 11%. [0003] The basic structure of CdTe solar cells is: glass (G) / transparent conductive film (T) / n-CdS(W) / p-CdTe (A) / metal back electrode (M), in which transparent conductive film (TCO) is the front electrode, CdS is the window layer, and Cd...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/072
CPCY02E10/50Y02E10/543
Inventor 李卫冯良桓武莉莉张静全蔡亚平雷智狄霞杨镓溢王文武
Owner SICHUAN UNIV
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