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Preparation of ZnSnS film and ZnSnS/SnS heterojunction, and application of solar cells

A heterojunction and thin film technology, applied in the field of solar cell materials, can solve the problems of increased preparation process and cost, thin film looseness and poor uniformity, and preparation of ZnSnS thin film, so as to avoid structural damage and performance degradation, and the equipment and preparation process are simple , rich effect

Inactive Publication Date: 2012-01-11
NANJING UNIV
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Problems solved by technology

[0005] For ternary or multi-component chalcogenide films, the main preparation method for materials with better quality is the co-evaporation method [3], but the co-evaporation method must be carried out under high vacuum conditions, and the requirements for experimental conditions and experimental equipment Very high, high cost, and not conducive to mass production
However, low-cost electrochemical methods can also be used to prepare thin films, but often cannot be completed in one step. This is because the electrode potential of each element in the multi-component compound is different, so it is difficult to prepare multi-component compounds by one-step electrochemical method.
At present, the usual method is to prepare the corresponding precursor compound first, and then obtain the final product by sulfuration or selenization, which increases the preparation process and cost, and the quality of the formed film is not satisfactory.
However, there is no report on the preparation of ZnSnS thin films by electrochemical methods.
This is because the ideal ZnSnS film cannot be obtained by using constant potential method and constant current method in the deposition process. The metal is slow, resulting in too low S content in the film; ② When the potential is lower than -0.9V, Zn ions cannot be sent to the solution to precipitate

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  • Preparation of ZnSnS film and ZnSnS/SnS heterojunction, and application of solar cells
  • Preparation of ZnSnS film and ZnSnS/SnS heterojunction, and application of solar cells
  • Preparation of ZnSnS film and ZnSnS/SnS heterojunction, and application of solar cells

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Embodiment Construction

[0025] By studying the electrodeposition preparation of materials such as SnS and ZnS, a method for growing ZnSnS thin films in one step is obtained. The specific process is as follows:

[0026] 1) Cleaning: Cleaning directly affects the quality of the thin film material obtained. The ITO substrate, platinum wire, reference electrode, beaker, etc. used are all cleaned by the following methods. Ultrasonic cleaning in washing liquid for 10 minutes first, then rinsing with deionized water, ultrasonic cleaning in deionized water for 10 minutes, and finally ultrasonic cleaning in absolute alcohol for 10 minutes.

[0027] 2), preparation of electrolyte: sodium thiosulfate is 100mM, zinc sulfate is 30mM (25-35mM is also acceptable), the concentration of stannous sulfate (from 0-10mM) can be adjusted to prepare different Sn component ratios film, and then adjust the pH of the solution to 3.0 by dropping dilute sulfuric acid. The stannous sulfate can also be 0, then it is a pure ZnS ...

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Abstract

A preparation method of a ternary ZnSnS film is characterized in that: glass, ceramic or a silicon chip plated with metal film are taken as an electrode to form a substrate material with the electrode or an ITO substrate is used, and a pulse potentiometry is used to perform electrodeposition in an electrolyte after being cleaned, wherein the temperature of the electrolyte is from a room temperature to 45 DEG C and an electrodeposition process comprises: clamping the substrate with the electrode or the ITO substrate on a cathode which is a working electrode and immersing into the electrolyte; parameters of adjusting the pulse potentiometry include: an open potential is minus 1.0V- minus 1.2 V; opening time is 10s; a turn-off potential is not 0V but minus 0.6V during deposition; turn-off time is 10S; the electrodeposition process is repeated or a corresponding pulse frequency is increased so as to obtain a needed thickness. In the invention, the pulse electrodeposition preparation method is improved. A related film can be acquired through one step. Equipment and the preparation process are simple. Large-area preparation can be realized and costs are low.

Description

technical field [0001] The invention relates to a new type of high-absorption ternary ZnSnS film composed of rich elements in the earth's crust obtained through an improved pulse electrodeposition technology, and a ZnSnS / SnS heterojunction photovoltaic structure is designed and constructed, which can be used for low-cost solar cells and belongs to solar cells material field. Background technique [0002] Since entering the 21st century, energy and environmental issues have become the two most concerned issues of human beings. As we all know, fossil fuels (such as oil, coal, natural gas, etc.) are the main source of energy in today's society. The exploitation and utilization of fossil fuels for hundreds of years have led to the increasing shortage of fossil energy and a series of serious impacts on the environment, such as environmental pollution, greenhouse effect Wait. Therefore, replacing non-renewable fossil energy with renewable green energy is the development trend an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032H01L31/04C25D9/04C25D5/18
CPCY02E10/50Y02P70/50
Inventor 徐骏喀哈尔·玉苏普林涛徐岭陈坤基肖金荣耿雷
Owner NANJING UNIV
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