Process for manufacturing p-n junction of large-area silicon-based solar cell by ion implantation method

Abstract

The invention relates to a process for manufacturing a p-n junction of a large-area silicon-based solar cell by the ion implantation method. The process comprises the following steps of: (1) taking a 3-4N polysilicon as a substrate and cleaning; (2) carrying out wafer-dipping in an argon-shielded closed environment; (3) annealing and cooling to room temperature after the dipped wafer is taken out; (4) implanting focused ion beams on a wafer-dipped large-area p-type layer by using phosphorane as an ion source ionized matter so as to form a junction of an n-type semiconductor layer; and (5) activating doped ions by using laser or infrared radiation and finishing manufacturing the p-n junction. The process provided by the invention has the following advantages that: liquid silicon with high purity is obtained through wafer-dipping on the polysilicon substrate with relatively-low purity, and materials are directly solidified on the polysilicon, so that the phenomenon of wasting the materials is avoided, and the production cost is greatly lowered; the uniform high-concentration accurate doping is carried out by phosphonium ion implantation, so that the problem of uneven doping caused by large-area diffusion can be solved, and the accuracy of concentration and the yield are enhanced; and the process time is short, thus the process has important significance for large-scale production.

Description

Technical field: [0001] The invention relates to a semiconductor device, in particular to a process for making p-n junctions of large-area silicon-based solar cells by ion implantation. Background technique: [0002] With the rapid development of economic construction, the demand for energy is increasing day by day. Due to the over-exploitation of natural resources such as oil, coal, and gas, the problem of energy supply shortage is becoming more and more serious. In order to cope with the shortage of energy, it has become a consensus to develop green new energy, and increasing the development and application of solar energy is one of them. As we all know, the p-n junction is the core of a silicon solar cell, and the quality of the p-n junction will directly affect the conversion efficiency of the solar cell. The traditional process is to directly carry out the diffusion technology on the silicon wafer, that is, apply the dopant source on the surface of the substrate, form ...

AI Technical Summary

Problems solved by technology

This process requires complex equipment, many process links, and the process takes a long time. During the production process, it will cause environmental pollution and complicate the solar cell process. The p-n junction produced is not easy to accurately control and its uniformity is often not ideal. Inhomogeneous resistance, etc.; the stability and repeatability of the diffusion process are not high, and the production efficiency is low

These deficiencies lead to high manufacturing costs of silicon-based solar cells, which restricts the popularization and application of silicon-based solar cells