Fluorine-containing cleaning solution

Abstract

The invention discloses a fluorine-containing cleaning solution with a low silicon oxynitride etching rate and for semiconductor industry use. The cleaning solution composition contains: a) 0.1%-20% of a fluoride, b) 0.01%-20% of polyols, c) 5%-75% of water, d) 1%-75% of a solvent, and e) 0-20% of other additives. The cleaning solution composition of the invention can effectively clean plasma etching residues during a semiconductor manufacturing process, and simultaneously has a low etching rate to base materials such as low dielectric materials (SiO2, PETEOS) and some metal substances (like Ti, Al, Cu) etc., and especially has a low silicon oxynitride etching rate. Therefore, the cleaning operation window of fluorine-containing cleaning solutions can be expanded, the service life of fluorine-containing cleaning solutions can be further enhanced, and the operation cost of semiconductor factories can be reduced. Thus, the fluorine-containing cleaning solution provided in the invention boasts good application prospects in microelectronic fields like semiconductor chip cleaning.

Description

technical field [0001] The invention relates to a fluorine-containing cleaning solution for the semiconductor industry. Background technique [0002] In the manufacturing process of semiconductor components, the coating, exposure and imaging of photoresist layers are necessary process steps for the pattern manufacturing of components. Residues of photoresist material need to be completely removed at the end of patterning (ie, after photoresist coating, imaging, ion implantation, and etching) before proceeding to the next process step. Ion bombardment during the doping step hardens the photoresist polymer, thus making the photoresist less soluble and thus more difficult to remove. To date, a two-step process (dry ashing and wet etching) has generally been used in the semiconductor manufacturing industry to remove this photoresist film. The first step is to remove most of the photoresist layer (PR) by dry ashing; the second step is to use a corrosion inhibitor composition we...

AI Technical Summary

Problems solved by technology

For example, US 5,698,503 discloses a fluorine-containing cleaning solution, but a large amount of polyhydric alcohol is used, and its content is 55-85%; therefore, the viscosity and surface tension of the cleaning solution are very large, thereby affecting the cleaning effect

For example, US 5,972,862 discloses a cleaning composition of fluorine-containing substances, which includes fluorine-containing substances, inorganic or organic acids, quaternary ammonium salts, and organic polar solvents, and has a pH of 7 to 11. Because its cleaning effect is not very stable, there are various question

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