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Solar battery and method of manufacturing the same

A technology of solar cells and manufacturing methods, which can be applied to circuits, photovoltaic power generation, electrical components, etc., and can solve problems such as reduced reflection suppression effects, poor substrate adhesion, and film peeling

Inactive Publication Date: 2015-06-10
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, Ag films and Ag alloy films have problems such as poor adhesion to substrates and film peeling during patterning.
Furthermore, the Ag film and the Ag alloy film have the following problems: the corrosion resistance against heating etc. is low, due to the oxidation of the film surface due to, for example, standing in the air or heat treatment, the reflectance decreases and the resistivity value increases.
In addition, the content of Pd on the surface side is reduced to suppress the reduction of the reflection effect

Method used

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  • Solar battery and method of manufacturing the same
  • Solar battery and method of manufacturing the same
  • Solar battery and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0048] Picture 1-1 It is a plan view showing a schematic configuration of a thin-film solar cell module (hereinafter referred to as a module) 10 as a thin-film solar cell according to Embodiment 1 of the present invention. Figure 1-2 is a diagram for explaining the cross-sectional structure in the width direction of a thin-film solar battery cell (hereinafter, sometimes referred to as a cell) 1 constituting the module 10, and is Picture 1-1 Sectional view of the main part in the direction of the line segment A-A'.

[0049] like Picture 1-1 as well as Figure 1-2 As shown, the module 10 of Embodiment 1 has a structure including a plurality of rectangular (rectangular) cells 1 formed on a translucent insulating substrate 2 , and these cells 1 are electrically connected in series. Unit 1 has as Figure 1-2 As shown, the translucent insulating substrate 2, the transparent electrode layer 3 formed on the translucent insulating substrate 2 as the first electrode layer, the phot...

manufacture example

[0066] Using an alloy target composed of Ag-1.5at%Mo, nitrogen (N 2) gas was sputtered in a plasma atmosphere of a mixed gas obtained by forming an Ag-Mo-N alloy film containing nitrogen with a film thickness of 200 nm. When the composition of the prepared sample was analyzed by inductively coupled plasma (Induced Coupled Plasma; abbreviation: ICP) emission analysis method and X-ray photoelectron spectroscopy (abbreviation: XPS) method, no matter which sample , the molybdenum composition ratio is 1.5at% Mo. The nitrogen composition ratio is the nitrogen (N 2 ) The gas partial pressure ratio changes between 1.3 at% and 5.5 at% correspondingly. In addition, nitrogen atoms exist in a substantially uniform concentration in the film.

[0067] From the above results, it can be seen that the Ag alloy film containing nitrogen in the range of 1.3 at % to 5.5 at % can be controlled by controlling the amount of N in the mixed gas when sputtering. 2 The partial pressure of the gas can...

Embodiment approach 2

[0161] In this embodiment, a case where the present invention is applied to a solar cell obtained by processing the surface of a single crystal silicon substrate or a polycrystalline silicon substrate (hereinafter referred to as a silicon substrate type solar cell) will be described. That is, an example will be described in which a photoelectric conversion layer made of a silicon substrate is provided and the technology of the present invention is applied to a reflective layer portion for rereflecting light passing through the photoelectric conversion layer to the photoelectric conversion layer.

[0162] Figure 9 It is a cross-sectional view for explaining the structure of the silicon substrate type solar cell 20 according to the second embodiment. The silicon substrate type solar cell 20 of the present embodiment includes: a semiconductor substrate 21 having a PN junction as a solar cell substrate having a photoelectric conversion function; The anti-reflection film 24 that ...

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Abstract

In a solar battery including: a photoelectric conversion layer that converts light into electricity; and a reflecting electrode layer that is provided on an opposite side of a light incident side in the photoelectric conversion layer and reflects light passed through the photoelectric conversion layer to the photoelectric conversion layer side, to realize a reflecting electrode layer having excellent adhesion and thermal corrosion resistance, stable electrical characteristics and satisfactory light reflection characteristics and to obtain a solar battery having high reliability, excellent electrical characteristics and optical characteristics, the reflecting electrode layer includes, on the photoelectric conversion layer side, a metal layer containing silver as a main component and containing nitrogen.

Description

technical field [0001] The present invention relates to a solar cell with a reflective electrode and a method of manufacturing the same. Background technique [0002] Conventional reflective electrodes for solar cells (devices) use silver (Ag) films or Ag alloy films that are electrically low in resistance and have high light reflectance (hereinafter referred to as reflectance). For example, Patent Document 1 discloses a solar cell using a single crystal or polycrystalline silicon substrate having a silver or copper back electrode. The aluminum-silicon alloy layer is removed after coating a single crystal or polycrystalline silicon substrate with a paste mainly composed of aluminum and firing it. Then, silver or copper electrodes are formed on the exposed surface of the substrate by a vacuum evaporation method, a sputtering method, or the like. In this solar cell, the effect of reflecting incident light from the surface on the back surface by the silver or copper back elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0392H01L31/046H01L31/054H01L31/18
CPCH01L31/022425H01L31/0392Y02E10/52H01L31/046H01L31/056H01L31/0463H01L31/0465H01L31/03921H01L31/02245
Inventor 中畑匠井上和式山县有辅
Owner MITSUBISHI ELECTRIC CORP
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