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Method for preparing Cd Te nano-wire and Cd Te-based core-shell type nano-wire by liquid-phase non-catalysis

A nanowire and core-based technology, which is applied in the field of preparing CdTe nanowires and CdTe-based core-shell nanowires by liquid-phase non-catalytic method, can solve the problems of poor matching and achieve uniform and dense coating, adjustable composition, and length thickness controllable effect

Inactive Publication Date: 2012-07-04
BEIJING NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the poor matching between common semiconductor lattice parameters and CdTe lattice parameters, there is no report on the synthesis of CdTe-based core-shell heterojunction semiconductor nanowires.

Method used

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  • Method for preparing Cd Te nano-wire and Cd Te-based core-shell type nano-wire by liquid-phase non-catalysis
  • Method for preparing Cd Te nano-wire and Cd Te-based core-shell type nano-wire by liquid-phase non-catalysis
  • Method for preparing Cd Te nano-wire and Cd Te-based core-shell type nano-wire by liquid-phase non-catalysis

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Embodiment 1, average diameter is the preparation of 6.5nm CdTe nanowire

[0043] (1) Preparation of cadmium precursor: 2mmol Cd(Ac) 2 Or CdO, 6mmol stearic acid and 0.6g n-tetradecyl phosphoric acid (2.16mmol) are mixed and added to the container (wherein Cd(Ac) 2 , the molar ratio of stearic acid and alkylphosphonic acid is 1:3:1.08), under the protection of inert gas, stir and heat to clarification, then drop to room temperature to obtain a white solid, which is the precursor of cadmium-organometallic cadmium ;

[0044] (2) Preparation of tellurium precursor solution: 0.5mmol tellurium powder and 2mL tri-n-octyl / butylphosphine were added to a container filled with argon or nitrogen, and the mixture was heated and stirred until clear (light yellow-green solution), Cool to room temperature, which is the precursor solution of tellurium-tri-n-octyl / butylphosphine tellurium solution;

[0045] (3) Injection pyrolysis of precursor solution: add an appropriate amount of t...

Embodiment 2

[0046] Embodiment 2, average diameter is the preparation of 8.5nm CdTe nanowire

[0047] Concrete steps are with embodiment 1, difference is that in step (1) Cd(Ac) 2 Or the amount of CdO, stearic acid and alkyl phosphonic acid is respectively 2mmol, 4mmol, 3mmol, and the amount of tellurium powder is 0.2mmol in the step (2), and the reaction time is 10min in the step (3); Gained nanowire average length is about It is 10 μm, the average diameter is about 8.5nm, and its aspect ratio is about 1100:1.

Embodiment 3

[0048] Embodiment 3, average diameter is the preparation of 11nm CdTe nanowire

[0049] Concrete steps are with embodiment 1, difference is that in step (1) Cd(Ac) 2 Or the amount of CdO, stearic acid and alkyl phosphonic acid is respectively 2mmol, 8mmol, 1mmol, and the amount of tellurium powder is 0.6mmol in the step (2), and the reaction time is 20min in the step (3); Gained nanowire average length is about It is 10 μm, the average diameter is about 11 nm, and its aspect ratio is about 900:1.

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Abstract

The invention relates to the field of the preparation of inorganic material, in particular to a method for preparing a Cd Te nano-wire and a Cd Te-based core-shell type nano-wire by liquid-phase non-catalysis. The method comprises the steps of: taking pyrolytic organic precursor as a synthetic route, and synthesizing the Cd Te nano-wire by ligand control induced-positioning assembly strategy; and taking the Cd Te nano-wire as a template, and building the Cd Te-based core-shell type nano-wire by controllable coating strategy. The preparation method is free from catalyst, simple in operation, mild in condition and rapid in reaction; the prepared Cd Te nano-wire is uniform in appearance, good in crystallization, high in purity and controllable in length and thickness; the prepared Cd Te-based core-shell type nano-wire is even and compact in coating of a shell layer, controllable in thickness and adjustable in components; and the nano-wire products prepared by the invention have wide application value in the field of a photoelectric device, a nano device and a sensor.

Description

technical field [0001] The invention relates to the field of preparation and application of nanomaterials, in particular, the invention relates to a liquid-phase non-catalytic method for preparing CdTe nanowires and CdTe-based core-shell nanowires. Background technique [0002] II-VI semiconductor nanowires have become a hot spot in basic research and application development in recent years because they have both the photoelectric properties of semiconductor nanomaterials with size modulation and the excellent charge transport properties of one-dimensional nanomaterials. As an important II-VI semiconductor nanomaterial, CdTe nanowires have outstanding photoelectric properties and charge transport capabilities (wide absorption and emission spectrum modulation range, between 400 and 820nm, high bulk light absorption coefficient and charge Mobility); therefore, it has a wide range of application values ​​in the fields of photovoltaic and light-emitting devices, nano-devices, bi...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82Y40/00
Inventor 李运超姜峰刘进进
Owner BEIJING NORMAL UNIVERSITY
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