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Moisture-proof protection film of SrI2:Eu-doped scintillating crystal and preparation method thereof

A scintillation crystal and strontium iodide technology, which is applied in the field of moisture-proof protective film and its preparation, can solve the problems of easy deliquescence, increase in crystal device size, and long-term use of the crystal, and achieve the effects of easy control, good quality, and compact size

Inactive Publication Date: 2012-07-04
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, SrI 2 : Eu crystals are very easy to deliquesce in the atmosphere, the crystal surface absorbs the moisture in the atmosphere and gradually loses its smooth surface, forming hydrates attached to the crystal surface, as time goes by, the entire crystal becomes hydrates, the initial hydrates are Strontium iodide dihydrate is completely transformed into strontium iodide hexahydrate with the increase of water content, so it can be seen that the crystal cannot be used for a long time without protective measures
Current usual treatment of SrI 2 : The method of Eu crystal is to seal the crystal in a specific packaging material in a dry operating room, such as metal packages such as aluminum alloy or copper alloy. This method increases the size of the crystal device, which is not conducive to compact europium-doped iodide Applications of Strontium Scintillation Detectors

Method used

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  • Moisture-proof protection film of SrI2:Eu-doped scintillating crystal and preparation method thereof

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Effect test

Embodiment 1

[0014] Process europium-doped strontium iodide crystals into columnar shape with a size of Ф25×25mm 3 , the evaporation system is evacuated to 1×10 -3 Pa, strontium fluoride as the evaporation material, molybdenum evaporation boat, 50W power electron beam evaporation for 0.5 hours, the crystal temperature is 50 °C, first evaporate the crystal cylinder, and then evaporate the end surface. The evaporation process rotates the crystal at a constant speed. A 100nm-thick layer of strontium fluoride is formed on the surface of the crystal. According to X-ray diffraction, the thin film is cubic crystal strontium fluoride. The europium-doped strontium iodide scintillation crystal plated with a strontium fluoride moisture-proof protective film is placed in the air. After three months, the crystal has no deliquescence, the surface is smooth, and the crystal has deliquescence resistance. To test its scintillation performance, the energy resolution at 662KeV gamma rays is 3%, the light o...

Embodiment 2

[0016] Processing 25×25×25mm 3 SrI 2 : Eu crystal, the evaporation system is vacuumed to 9×10 -4 Pa, strontium fluoride with a purity of 99.99% is used as the evaporation material, and the molybdenum evaporation boat is evaporated with a power electron beam of 200W for 30 hours, and the crystal temperature is 400°C. Strontium fluoride is formed on the surface to a thickness of 10 μm. According to X-ray diffraction, the thin film is cubic crystal strontium fluoride. The europium-doped strontium iodide scintillation crystal plated with a strontium fluoride moisture-proof protective film is placed in the air. After one month, the crystal has no deliquescence, the surface is smooth, and the crystal has deliquescence resistance.

Embodiment 3

[0018] Processing 10×10×10mm 3 SrI 2 : Eu crystal, the evaporation system is vacuumed to 5×10 -4 Pa, strontium fluoride with a purity of 99.99% is used as the evaporation material, and the molybdenum evaporation boat is evaporated with a power electron beam of 100W for 10 hours, and the crystal temperature is 200°C. Strontium fluoride is formed on the surface to a thickness of 1 μm. According to X-ray diffraction, the thin film is cubic crystal strontium fluoride. The europium-doped strontium iodide scintillation crystal plated with a strontium fluoride moisture-proof protective film is placed in the air. After one month, the crystal has no deliquescence, the surface is smooth, and the crystal has deliquescence resistance.

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Abstract

The invention provides a moisture-proof protection film of an SrI2:Eu-doped scintillating crystal and a preparation method of the moisture-proof protection film. Aiming at the problem of easy deliquescence of the SrI2:Eu-doped scintillating crystal, a strontium fluoride film is deposited on a crystal surface by using an electron beam evaporation technology. As the film is capable of hindering contact of moisture in a working environment with the crystal surface, the deliquescence proof property of the crystal is improved and the service life of the crystal is prolonged. The preparation method is easy to control and suitable for mass production. The coated SrI2:Eu-doped scintillating crystal prepared by the invention is suitably applied to fields such as security inspection equipment, nuclear medicine imaging, nuclear radiation detection and the like.

Description

technical field [0001] The present invention relates to a kind of europium-doped strontium iodide (SrI 2 The invention relates to a moisture-proof protective film of Eu) scintillation crystal and a preparation method thereof, in particular to a kind of moisture-proof protective film of strontium fluoride thin film prepared on the surface of europium-doped strontium iodide crystal by electron beam evaporation technology, which belongs to the technical field of scintillation crystal. Background technique [0002] Scintillation crystals play a very important role in radiation detection and other fields, and are widely used in various high-energy physics, nuclear physics, nuclear medicine, industrial applications, oil well detection and other fields. In 1968, Robert Hofstadter invented the europium-doped strontium iodide crystal, the chemical formula is expressed as SrI 2 :Eu, but the crystal has not been used in radiation detection. In 2008, researchers at the US National Lab...

Claims

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Application Information

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IPC IPC(8): C30B33/00C23C14/06C30B29/12
Inventor 秦来顺张烨史宏声舒康颖
Owner CHINA JILIANG UNIV
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