Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of quantum point contact

A quantum dot contact and contact technology, applied in the field of nanotechnology research and storage, can solve the problems of demanding instruments, narrow material selection range, harsh conditions, etc., and achieve high preparation precision, wide application range and simple preparation process. Effect

Inactive Publication Date: 2012-07-04
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can be used to obtain a stable point contact structure, but this method is very demanding on the instrument
[0004] In summary, the current methods for preparing quantum dot contacts generally have disadvantages such as difficult preparation, harsh conditions, narrow range of material selection, and low success rate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of quantum point contact
  • Manufacturing method of quantum point contact
  • Manufacturing method of quantum point contact

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] In this embodiment, the "sandwich" structural unit (such as figure 1 Shown) the electrode one 2 adopts the platinum that thickness is 10~200 nanometers, preferably about 100 nanometers, and the intermediate layer 3 adopts the zinc oxide that thickness is 10~200 nanometers, preferably about 100 nanometers, and electrode two 4 adopts the thickness and is 10 nanometers. ~200 nm, preferably about 100 nm of niobium.

[0040] The above-mentioned "sandwich" structural unit can be prepared sequentially on a flat substrate by using the existing coating process, and one of the preparation methods is as follows:

[0041] Step 1. First, sputtering a layer of metal platinum electrode as electrode 1 on the flat substrate cleaned by ultrasonic cleaning with acetone and ethanol in advance by means of electron beam evaporation;

[0042] Step 2, place the flat substrate 1 grown with electrode 1 in a high vacuum environment, use magnetron sputtering in an atmosphere with an argon-oxygen ...

Embodiment 2

[0047] In this embodiment, the "sandwich" structural unit (such as figure 1 As shown), the electrode one 2 adopts indium tin oxide with a thickness of 10-200 nanometers, preferably about 100 nanometers, the intermediate layer 3 adopts zinc oxide with a thickness of 10-200 nanometers, preferably about 100 nanometers, and the electrode two 4 adopts Indium tin oxide with a thickness of 10-200 nanometers, preferably about 100 nanometers.

[0048] The above-mentioned "sandwich" structural unit can be prepared sequentially on a flat substrate by using the existing coating process, and one of the preparation methods is as follows:

[0049] Step 1. Firstly, sputtering a layer of metal indium tin oxide electrode as electrode-2 on the clean flat substrate after ultrasonic cleaning with acetone and ethanol in advance;

[0050] Step 2, place the flat substrate 1 grown with electrode 1 in a high vacuum environment, use magnetron sputtering in an atmosphere with an argon-oxygen pressure ra...

Embodiment 3

[0054] In this embodiment, the method for preparing the quantum dot contact is basically the same as that of Embodiment 1, the difference is that electrode 2 adopts platinum with a thickness of 10 to 200 nanometers, preferably about 100 nanometers, and the intermediate layer 3 adopts platinum with a thickness of 10 to 200 nanometers. nanometer, preferably about 200 nanometers of zinc oxide, and the second electrode 4 is copper with a thickness of 10-200 nanometers, preferably about 100 nanometers. Similarly, when a voltage is applied to both ends of the electrode 2 and the electrode 4, the ions and / or vacancies in the conductive region 2 formed by the electrode 2 and the intermediate layer are moved to the conductive region 1 formed by the electrode 2 under the driving of the electric field. A conductive channel is formed between regions; by adjusting the voltage amplitude, the conductance G of the conductive channel reaches NG 0 , where N is a natural number, G 0 In order to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Conductance valueaaaaaaaaaa
Conductance valueaaaaaaaaaa
Login to View More

Abstract

The invention discloses a manufacturing method of a quantum point contact. The method is based on a 'sandwich' structure unit composed of an electrode one, a middle layer and an electrode two, wherein the electrode one and the electrode two are respectively composed of conducting materials, and the middle layer is composed of insulating dielectric materials; the electrode one forms a conducting region one, and the electrode two forms a conducting region two; by applying voltage at two ends of the electrode one and the electrode two, the charged ions and / or the vacancy in the conducting region two are moved towards the electrode one so as to form a conducting channel, and by controlling the size of the applied voltage, the conductivity G of the conducting channel is regulated to be integral times of quantized conductivity G0, namely, the quantum point contact between the conducting region one and the conducting region two is realized. In comparison with the prior art, the manufacturing method of the invention is simple, easy to control and high in control accuracy, and can manufacture the quantum point contact of different material systems by selecting the electrodes and the middle layer composed of different materials, thus, the manufacturing method has better application potential.

Description

technical field [0001] The invention relates to the field of nanotechnology research and storage technology, in particular to a method for preparing quantum dot contacts. Background technique [0002] Quantum point contact means that the contact part of two discrete conductive regions reaches the atomic scale. The size range of this structure is smaller than the mean free path of electrons, and the scale is close to the Fermi wavelength. It is widely used to study the quantum electrical transport properties at the atomic scale. Experiments have found that the conductance of this kind of quantum point contact is quantized, and its quantized unit is G 0 = 2e 2 / h (where e represents the charge of an electron and h represents Planck's constant). This phenomenon has nothing to do with the type of material and is a universal phenomenon. For special material systems (such as some magnetic materials), under certain conditions (such as under a magnetic field, at a low temperature...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/335H01L21/28
Inventor 李润伟朱小健尚杰
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com