Manufacturing method of quantum point contact

A quantum dot contact and contact technology, applied in the field of nanotechnology research and storage, can solve the problems of demanding instruments, narrow material selection range, harsh conditions, etc., and achieve high preparation precision, wide application range and simple preparation process. Effect

Inactive Publication Date: 2012-07-04
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can be used to obtain a stable point contact structure, but this method is very demanding on the instrument
[0004] In summary, the current methods for p

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of quantum point contact
  • Manufacturing method of quantum point contact
  • Manufacturing method of quantum point contact

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0038] Example 1:

[0039] In this embodiment, the "sandwich" structural unit (such as figure 1 The electrode one 2 shown) adopts platinum with a thickness of 10 to 200 nanometers, preferably about 100 nanometers, the intermediate layer 3 adopts zinc oxide with a thickness of 10 to 200 nanometers, preferably about 100 nanometers, and the electrode two 4 adopts a thickness of 10 ~200 nm, preferably about 100 nm of niobium.

[0040] The above-mentioned "sandwich" structural unit can be prepared on a flat substrate sequentially by using an existing coating process, and one of the preparation methods is as follows:

[0041] Step 1. First, use electron beam evaporation to sputter a layer of metal platinum electrode as electrode one on a clean flat substrate that has been ultrasonically cleaned with acetone and ethanol in advance;

[0042] Step 2. Place the flat substrate 1 on which electrode-2 is grown in a high vacuum environment, and use magnetron sputtering in an atmosphere with an argo...

Example Embodiment

[0046] Example 2:

[0047] In this embodiment, the "sandwich" structural unit (such as figure 1 The electrode one 2 shown) adopts indium tin oxide with a thickness of 10 to 200 nanometers, preferably about 100 nanometers, the intermediate layer 3 adopts zinc oxide with a thickness of 10 to 200 nanometers, preferably about 100 nanometers, and the electrode two 4 adopts Indium tin oxide with a thickness of 10 to 200 nanometers, preferably about 100 nanometers.

[0048] The above-mentioned "sandwich" structural units can be prepared on a flat substrate sequentially by using an existing coating process. One of the preparation methods is as follows:

[0049] Step 1. First, a layer of metal indium tin oxide electrode is sputtered as electrode one by evaporation on a clean flat substrate that has been ultrasonically cleaned with acetone and ethanol in advance;

[0050] Step 2. Place the flat substrate 1 on which the electrode-2 is grown in a high vacuum environment, and use magnetron sputter...

Example Embodiment

[0053] Example 3:

[0054] In this embodiment, the method of preparing quantum dot contacts is basically the same as that of embodiment 1, except that the electrode 2 uses platinum with a thickness of 10 to 200 nanometers, preferably about 100 nanometers, and the intermediate layer 3 uses a thickness of 10 to 200 nanometers. Nanometer, preferably about 200 nanometers of zinc oxide, electrode two 4 uses copper with a thickness of 10 to 200 nanometers, preferably about 100 nanometers. Similarly, when a voltage is applied to both ends of the electrode one 2 and the electrode 4, the ions and / or vacancies in the conductive area two formed by the electrode two and the intermediate layer are moved to the conductive area one formed by the electrode one and the conductive area under the driving of the electric field. A conductive channel is formed between area one; by adjusting the voltage amplitude, the conductance G of the conductive channel reaches NG 0 , Where N is a natural number, G...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Conductance valueaaaaaaaaaa
Conductance valueaaaaaaaaaa
Login to view more

Abstract

The invention discloses a manufacturing method of a quantum point contact. The method is based on a 'sandwich' structure unit composed of an electrode one, a middle layer and an electrode two, wherein the electrode one and the electrode two are respectively composed of conducting materials, and the middle layer is composed of insulating dielectric materials; the electrode one forms a conducting region one, and the electrode two forms a conducting region two; by applying voltage at two ends of the electrode one and the electrode two, the charged ions and/or the vacancy in the conducting region two are moved towards the electrode one so as to form a conducting channel, and by controlling the size of the applied voltage, the conductivity G of the conducting channel is regulated to be integral times of quantized conductivity G0, namely, the quantum point contact between the conducting region one and the conducting region two is realized. In comparison with the prior art, the manufacturing method of the invention is simple, easy to control and high in control accuracy, and can manufacture the quantum point contact of different material systems by selecting the electrodes and the middle layer composed of different materials, thus, the manufacturing method has better application potential.

Description

technical field [0001] The invention relates to the field of nanotechnology research and storage technology, in particular to a method for preparing quantum dot contacts. Background technique [0002] Quantum point contact means that the contact part of two discrete conductive regions reaches the atomic scale. The size range of this structure is smaller than the mean free path of electrons, and the scale is close to the Fermi wavelength. It is widely used to study the quantum electrical transport properties at the atomic scale. Experiments have found that the conductance of this kind of quantum point contact is quantized, and its quantized unit is G 0 = 2e 2 / h (where e represents the charge of an electron and h represents Planck's constant). This phenomenon has nothing to do with the type of material and is a universal phenomenon. For special material systems (such as some magnetic materials), under certain conditions (such as under a magnetic field, at a low temperature...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/335H01L21/28
Inventor 李润伟朱小健尚杰
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap