Electrode for realizing ohmic contact with p-type ZnS (zinc sulfide) quasi-one-dimensional nanometer material and preparation method for electrode

A technology of nanomaterials and ohmic contacts, applied in nanotechnology, circuits, electrical components, etc., can solve problems such as low electron affinity, high surface state density, and difficulty in forming ohmic contacts, and achieve maturity, reliability, easy control, and preparation The effect of simple process

Inactive Publication Date: 2012-07-04
HEFEI UNIV OF TECH
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Problems solved by technology

However, ZnS nanomaterials have low electron affinity and high surface state density, which leads to surface Fermi level pinning, so that there is always a high Schottky barrier at the metal / semiconductor interface, making it difficult to Form a good ohmic contact, the problem of ohmic contact seriously restricts the application of ZnS nanomaterials in nano optoelectronic devices
At present, there are not many studies on the ohmic contact of p-type ZnS materials. Related reports include Yuan GD et al. using Au electrodes to study the charge transport properties of N-doped ZnS nanometers [G.D Yuan, W.J. Zhang, W.F Zhang, X.Fan, I .Bello, C.S Lee, S.T Lee, Appl.Phys.Lett.93(2008), 213102], found that there is a Schottky barrier between the Au electrode and the N-doped ZnS nanobelt, which is not a good ohmic contact

Method used

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  • Electrode for realizing ohmic contact with p-type ZnS (zinc sulfide) quasi-one-dimensional nanometer material and preparation method for electrode
  • Electrode for realizing ohmic contact with p-type ZnS (zinc sulfide) quasi-one-dimensional nanometer material and preparation method for electrode
  • Electrode for realizing ohmic contact with p-type ZnS (zinc sulfide) quasi-one-dimensional nanometer material and preparation method for electrode

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The Ag-doped ZnS nanobelts synthesized by chemical vapor deposition were uniformly dispersed on SiO with a thickness of 300 nm. 2 On the n-type heavily doped Si wafer, the photoresist was evenly spin-coated, and the four-electrode electrode pattern was photoetched. figure 1 SEM image of the device.

[0025] Using the electron beam evaporation method, the condition is a vacuum of 1×10 -5 Pa, the deposition rate is 0.01nm per second, first deposit a 1nm thick Cu film on the photoetched electrode pattern, and then deposit a 60nm thick Au film to obtain a Cu / Au composite electrode. Using the KEITHLEY 4200 semiconductor characteristic test system, the Ag-doped ZnS nanoribbon volt-ampere characteristic curve is obtained through the two-electrode and four-electrode test methods, as shown in figure 2 shown, from figure 2 From the curve shown, it can be seen that the resistivity of the nanoribbon measured by the two methods is basically the same, and the calculated resistiv...

Embodiment 2

[0029] Ag-doped ZnS nanobelts synthesized by chemical vapor deposition method were uniformly dispersed on SiO with a thickness of 300 nm. 2 On the n-type heavily doped Si wafer, the photoresist was evenly spin-coated, and the four-electrode electrode pattern was photoetched.

[0030] Using the electron beam evaporation method, the condition is a vacuum of 1×10 -3 Pa, the deposition rate is 1nm per second. First deposit a 10nm thick Cu film on the photoetched electrode pattern, and then deposit a 60nm thick Au film to obtain a composite electrode of Cu(10nm) / Au(60nm). Using the KEITHLEY 4200 semiconductor characteristic test system, the Ag-doped ZnS nanoribbon volt-ampere characteristic curve is obtained through the two-electrode and four-electrode test methods, as shown in Figure 5 shown, from Figure 5 From the curve shown, it can be seen that the resistivity of the nanoribbon measured by the two methods is basically the same, and the calculated resistivity of the contact ...

Embodiment 3

[0034] Ag-doped ZnS nanobelts synthesized by chemical vapor deposition method were uniformly dispersed on SiO with a thickness of 300 nm. 2 On the n-type heavily doped Si wafer, the photoresist was evenly spin-coated, and the four-electrode electrode pattern was photoetched.

[0035] Using the electron beam evaporation method, the condition is a vacuum of 1×10 -4Pa, the deposition rate is 0.3nm per second, first deposit 4nm thick Cu on the photoetched electrode pattern, and then deposit 60nm thick Au to obtain a Cu(4nm) / Au(60nm) composite electrode. Using the KEITHLEY 4200 semiconductor characteristic test system, the Ag-doped ZnS nanoribbon volt-ampere characteristic curve is obtained by two-electrode and four-electrode test methods, such as Figure 8 As shown, it can be seen from the curve that the resistivity of the nanoribbon measured by the two methods is basically the same, and the calculated resistivity of the contact between the electrode and the ZnS material is 5 ord...

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Abstract

The invention discloses an electrode for realizing ohmic contact with a p-type ZnS (zinc sulfide) quasi-one-dimensional nanometer material and a preparation method for the electrode. The electrode is characterized in that the electrode is a Cu (copper) / A composite electrode composed of a Cu membrane and an A membrane, wherein the A membrane is an Au (gold) membrane, a Ni (nickel) membrane or a Pt (platinum) membrane and is on the outer layer, and the Cu membrane in the composite electrode contacts with the p-type ZnS material. The method is characterized by including the steps of forming the Cu membrane on the p-type ZnS material firstly and then forming the A membrane on the surface of the Cu membrane by means of electron beam evaporation. The method solves the problem that a metal electrode and the p-type ZnS quasi-one-dimensional nanometer material directly form ohmic contact and can be used for preparation and research of relevant devices made of the p-type ZnS quasi-one-dimensional nanometer material. Besides, the preparation method for the electrode is simple, reliable and easy in operation.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to an electrode in ohmic contact with a p-type ZnS material and a preparation method thereof. Background technique [0002] Since Iijima synthesized carbon nanotubes in 1991, one-dimensional nanomaterials have become a research hotspot in nanotechnology due to their novel physical, chemical and biological properties and potential applications in nanodevices. The large amount, low cost, simple and effective synthesis and assembly of one-dimensional nanomaterials are of special significance not only from the perspective of basic research, but also from the perspective of performance and application. Semiconductor nanomaterials have potential applications in optics, electricity, magnetism, and nanoelectronics, and are one of the research hotspots in nanomaterials science in recent years. Zinc sulfide (ZnS) is one of the most important group II-VI direct bandg...

Claims

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Application Information

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IPC IPC(8): H01L29/45H01L21/44H01L21/443B82Y40/00
Inventor 于永强蒋阳揭建胜吴春艳王莉朱志峰
Owner HEFEI UNIV OF TECH
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