Preparation method for graphene material with porous structure

A porous structure, graphene technology, applied in the direction of graphene, nano-carbon, nanotechnology, etc., can solve the problems of poor quality of graphene, hindering the rapid transmission of electrons, unfavorable rapid electron transmission, etc., to achieve easy process, reduce interface resistance, The effect of excellent electrical conductivity

Inactive Publication Date: 2012-07-18
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

For example, the quality of graphene prepared by chemical exfoliation is poor, and there are many defects inside graphene, which hinder the rapid transmission of electrons.
Although graphene prepared by chemical vapor deposition has high quality, chemical

Method used

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  • Preparation method for graphene material with porous structure
  • Preparation method for graphene material with porous structure
  • Preparation method for graphene material with porous structure

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preparation example Construction

[0018] The invention relates to a preparation method for preparing a graphene material with a porous structure, which is mainly used for reducing the graphene interface resistance and improving its electrical conductivity. Its technical feature is that: the porous structure material is used as a template, and the highly conductive porous structure graphene is obtained through chemical vapor deposition. The template used in the present invention adopts magnesium oxide / silicon composite material with a porous structure, and is prepared in a large amount by a chemical vapor deposition method. The preparation method of the porous structure graphene material has simple process, easy control of the process, and excellent electrical conductivity of the material.

[0019] As an example, the preparation method of the porous structure graphene material of the present invention is specifically described below.

[0020] The preparation process of porous structure graphene material of the...

Embodiment 1

[0028] (1) Using metal magnesium powder and silicon dioxide powder as raw materials, according to the molar ratio of magnesium and silicon dioxide 2:1, after the raw materials are mixed and ball milled for 15 hours, the air in the reaction furnace chamber is purged with a mixed gas of hydrogen and argon. Completely expelled, heat treatment at 600°C for 8h, to obtain a porous magnesium oxide / silicon composite material, the scanning electron microscope photo of the product is as follows figure 1 shown;

[0029] (2) Using the above-mentioned porous magnesium oxide / silicon composite material as a template, put it into a quartz boat, put it into the central area of ​​the chemical vapor deposition reaction furnace, feed 20SCCM hydrogen and 200SCCM argon, and start heating to 900°C after 60min. After constant temperature for 30 minutes, 20SCCM acetylene was introduced, and the reaction time was 20 minutes. After the reaction, stop passing acetylene, turn off the electric furnace, and...

Embodiment 2

[0032] (1) Using metal magnesium powder and silicon dioxide powder as raw materials, according to the molar ratio of magnesium and silicon dioxide 2:1, after the raw materials are mixed and ball milled for 15 hours, the air in the reaction furnace chamber is purged with a mixed gas of hydrogen and argon. Completely expelled, heat treatment at 700 ° C for 4 hours, to obtain a porous magnesium oxide / silicon composite material, the product scanning electron microscope photo is as follows figure 1 shown;

[0033] (2) Using the above-mentioned porous magnesium oxide / silicon composite material as a template, put it into a quartz boat, put it into the central area of ​​the chemical vapor deposition reaction furnace, feed 20SCCM hydrogen and 200SCCM argon, and start heating to 800°C after 60min. After constant temperature for 30 minutes, 40 SCCM acetylene was introduced, and the reaction time was 20 minutes. After the reaction, stop feeding acetylene, turn off the electric furnace, an...

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Abstract

The invention aims at providing a preparation method for a graphene material with a porous structure. The invention adopts the technical scheme that the preparation method comprises the following steps: A, with a porous magnesium oxide/silicon composite material as a template, enabling a carbon source to grow graphene in a structure of the porous magnesium oxide/silicon composite material to form a magnesium oxide/silicon/graphene composite structure by using a chemical vapor deposition method; and B, etching to remove a template material of the composite structure, thereby obtaining the graphene material with the porous structure. According to the preparation method, the magnesium oxide/silicon composite material with the porous structure is used as the template and the macroscopic preparation can be carried out by using the chemical vapor deposition method. The preparation method for the graphene material with the porous structure is simple in process, easiness in control of the process and excellent material conductivity.

Description

technical field [0001] The invention relates to a preparation method of a graphene material with a porous structure, which is mainly used for reducing the interface resistance of the graphene and improving the conductivity of the graphene. Background technique [0002] Graphene is a carbonaceous material in which carbon atoms are tightly packed into a single-layer two-dimensional honeycomb lattice structure. ) basic unit. Graphene has many peculiar and excellent properties: thermal conductivity, carrier mobility, and specific surface area are relatively high, and it also has phenomena such as fractional quantum Hall effect, quantum Hall ferromagnetism, and exciton band gap. These excellent properties and unique nanostructures have made graphene the focus of extensive attention in recent years. At present, the preparation methods of graphene mainly include chemical exfoliation and chemical vapor deposition. [0003] For example: Chinese patent CN200910187298 reports a grap...

Claims

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Application Information

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IPC IPC(8): C01B31/04B82Y40/00C01B32/186
Inventor 黄富强唐宇峰
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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