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Azobenzene phi-phi stacked graphene photoresponse material and preparation method thereof

A light-responsive, azobenzene-based technology, applied in photovoltaic power generation, climate sustainability, final product manufacturing, etc., can solve the problems of the preparation of azobenzene π-π stacked graphene materials, light control and its optical properties. , electrical and other performance issues, to achieve the effect of fast photoresponse performance, simple manufacturing process, and fast photoelectric conversion rate

Active Publication Date: 2012-07-18
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, there are no reports or patents related to the preparation of azobenzene π-π stacked graphene materials, light control and its optical and electrical properties.

Method used

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  • Azobenzene phi-phi stacked graphene photoresponse material and preparation method thereof
  • Azobenzene phi-phi stacked graphene photoresponse material and preparation method thereof

Examples

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Effect test

Embodiment 1

[0019] First prepare a 0.2mg / mL graphene oxide aqueous solution, take 5 pieces of indium tin oxide (ITO) glass with an area of ​​2×1cm, and spray the solution evenly on the indium tin oxide (ITO) glass at a temperature of 60°C. Spray 2ml of graphene oxide aqueous solution, heat treatment at 120°C for 30 minutes. Put the obtained indium tin oxide (ITO) glass with graphene oxide into a mixture of 15 mL of absolute ethanol and 15 mL of deionized water, and add 50 μL of hydrazine hydrate with a mass fraction of 80% at a temperature of 50° C. solution, reacted for 5 hours. After the reaction, the samples were taken out and dried in vacuum. Weigh 3.57mg of azobenzene 5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine copper into 5ml of acetone and disperse evenly. The indium tin oxide (ITO) glass of graphene is immersed in the prepared acetone solution containing azobenzene, taken out after 30 minutes and dried in vacuum to obtain the azobenzene π-π stacked graphene photorespon...

Embodiment 2

[0022] First prepare a 0.2mg / mL graphene oxide aqueous solution, take 5 pieces of indium tin oxide (ITO) glass with an area of ​​2×1cm, and spray the solution evenly on the indium tin oxide (ITO) glass at a temperature of 60°C. Spray 2ml of graphene oxide aqueous solution, heat treatment at 120°C for 30 minutes. Put the obtained indium tin oxide (ITO) glass with graphene oxide into a mixture of 15 mL of absolute ethanol and 15 mL of deionized water, and add 50 μL of hydrazine hydrate with a mass fraction of 80% at a temperature of 50° C. solution, reacted for 5 hours. After the reaction, the samples were taken out and dried in vacuum. Weigh 3.57 mg of azobenzene and put it into 5 ml of acetone to disperse evenly, immerse the obtained sample in the prepared mixed solution, take it out after 40 minutes and dry it in vacuum to obtain a photoresponsive material.

[0023] The prepared material is used as the working electrode, and the platinum sheet is used as the counter electro...

Embodiment 3

[0025] First prepare a 0.2mg / mL graphene oxide aqueous solution, take 5 pieces of indium tin oxide (ITO) glass with an area of ​​2×1cm, and spray the solution evenly on the indium tin oxide (ITO) glass at a temperature of 60°C. Spray 2ml of graphene oxide aqueous solution, heat treatment at 120°C for 30 minutes. Put the obtained indium tin oxide (ITO) glass with graphene oxide into a mixture of 15 mL of absolute ethanol and 15 mL of deionized water, and add 50 μL of hydrazine hydrate with a mass fraction of 80% at a temperature of 50° C. solution, reacted for 5 hours. After the reaction, the samples were taken out and dried in vacuum. Weigh 3.57 mg of azobenzene and put it into 5 ml of acetone to disperse evenly, immerse the obtained sample in the prepared mixed solution, take it out after 50 minutes and dry it in vacuum to obtain a photoresponsive material.

[0026] The prepared material is used as the working electrode, and the platinum sheet is used as the counter electro...

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Abstract

The invention discloses an azobenzene phi-phi stacked graphene photoresponse material and a preparation method thereof. The phoresponse material is produced by stacking azobenzene 5, 9, 14, 18, 23, 27, 32, 36- octabutoxy-2,3-copper naphthalocyanine. The preparation process comprises the following steps that: the well-prepared oxidized graphene solution is sprayed onto tin indium oxide glass to be thermally treated under the temperature of 120 DEG C, and then hydrazine solution with mass fraction of 80 percent is used for reducing the tin indium oxide glass coated with the oxidized graphene; and then the tin indium oxide glass coated with the reduced graphene is soaked in mixed solution of azobenzene and chloroform, which are uniformly dispersed to prepare the photoresponose material. The prepared azobenzene phi-phi stacked graphene photoresponse material has advantages of easiness in controlling optical properties and electric properties, fast photoelectric conversion speed, apparent photoelectric conversion, simple production process and the like.

Description

technical field [0001] The invention relates to an azobenzene π-π stacked graphene photoresponsive material and a preparation method thereof, belonging to the technical fields of light, electricity and energy conversion materials. Background technique [0002] Near-infrared absorbing materials with large π-bond structures have attracted more and more attention, mainly because they have potential advantages in the fields of optics, solar cells, and biological imaging. Azo derivatives are one of the more prominent ones. The so-called azo derivatives refer to compounds containing azo groups (-N=N-) in their molecular structures. When the two ends of the azo groups are connected with A benzene ring constitutes an azobenzene molecule. [0003] Azobenzene derivatives generally have a strong absorption peak in the 400-450nm region, which is generally called the Soret band; and a weaker absorption peak in the 500-700nm region, called the Q band. In order to realize the near-infrar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46
CPCY02E10/549Y02P70/50
Inventor 封伟纪伟冯奕钰
Owner TIANJIN UNIV
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