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Copper zinc tin sulfur compound thin-film solar cell and preparation method thereof

A technology of copper-zinc-tin-sulfur compound, which is applied in the field of new energy sources of optoelectronic materials, can solve the problems that restrict the large-scale industrialization of CIGS thin-film solar cells, toxicity, and poor content ratio, so as to save preparation costs, simplify process steps, and reduce costs Effect

Inactive Publication Date: 2012-07-25
EAST CHINA NORMAL UNIV
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Problems solved by technology

However, the biggest disadvantage of CIGS is that In, Ga, and Se are all rare elements, and their content in the earth’s crust is relatively poor. In addition, Se is a toxic element, which will restrict the large-scale industrialization of CIGS thin-film solar cells.

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  • Copper zinc tin sulfur compound thin-film solar cell and preparation method thereof
  • Copper zinc tin sulfur compound thin-film solar cell and preparation method thereof
  • Copper zinc tin sulfur compound thin-film solar cell and preparation method thereof

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Embodiment Construction

[0025] The specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing and embodiment:

[0026] refer to figure 1 , the solar cell of the present invention comprises: a glass substrate ①, a metal back electrode layer ②, a P-type absorber layer ③, an n-type cadmium sulfide buffer layer ④, a transparent oxide film window layer ⑤ and a TCO top electrode ⑥, wherein: the The p-type absorbing layer ③ is a copper-zinc-tin-sulfur quaternary compound film deposited by pulsed laser, and its film thickness is 1000-2000 nanometers.

[0027] Solar cell preparation process of the present invention is as follows:

[0028] (1), the preparation of the target, the high-purity Cu 2 S, ZnS, SnS 2 The powder is mixed according to 1:1:1, ball milled in alcohol solution for 8 hours, then dried and put into a mold, pressed into a circular target (25mm in diameter, 4mm in thickness), and put into a tube furnace with argon gas , sintered at 700...

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Abstract

The invention discloses a copper zinc tin sulfur compound thin-film solar cell and a preparation method of the copper zinc tin sulfur compound thin-film solar cell, wherein the thin-film solar cell comprises a glass substrate, a metal back electrode layer, a P-type absorption layer, an n-type cadmium sulfide buffer layer, a transparent oxide thin-film window layer and a TCO top electrode; the preparation method of the P-type copper zinc tin sulfur absorption layer comprises the following steps: adopting single-target pulsed laser deposition technology, and synthesizing through one-step technology without subsequent heat treatment process. According to the invention, the solar cell has the advantages of enough and non-toxic sources for the contained elements, environmental protection, high photoelectric conversion rate, good stability, simple structure, simple preparation technology and low cost.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials and new energy sources, and is a semiconductor thin-film solar cell, specifically a quaternary copper-zinc-tin-sulfur (Cu 2 ZnSnS 4 ) compound thin film solar cell and its preparation method. Background technique [0002] At present, the increasing shortage of traditional energy sources and the increasing global attention to environmental issues have made renewable energy represented by the photovoltaic industry usher in a peak period of development in recent years. In the long run, renewable energy will be the main source of energy for human beings in the future. Among the newly developed renewable energy sources, solar energy has the greatest potential. So far, many types of solar cells have been developed. Due to the dispersive nature of sunlight, large-area solar cell devices are often required in order to obtain higher power generation. In order to reduce costs, it is very ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/072H01L31/18
CPCY02E10/50Y02P70/50
Inventor 何俊孙琳杨平雄褚君浩
Owner EAST CHINA NORMAL UNIV
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