Method for preparing copper, indium and sulfur thin film material by using electrodeposition method
A thin film material, copper indium sulfide technology, applied in circuits, electrical components, photovoltaic power generation and other directions, can solve the problems of high production cost, unsuitable for large-scale production, complex preparation process, etc., to reduce process cost, environmental protection preparation method, The effect of simplifying the preparation process
Inactive Publication Date: 2012-09-05
BEIJING UNIV OF CHEM TECH
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[0003] At present, the preparation methods of copper indium sulfur thin films are mostly researched on vacuum multi-component co-evaporation method, sputtering method, electrodeposition method, etc., but the above-mentioned methods all have certain defects. Among them, the vacuum ternary evaporation method usually places the material on On the filament or carrier, although the technology is simple, it is not suitable for large-scale production; as one of the most mature methods for preparing copper indium sulfur thin films, the sputtering method needs to be carried out in a vacuum, and the production cost is relatively high; in the preparation of electrodeposition , the one-step electrodeposition method to prepare copper indium sulfur thin film produces copper indium sulfide chalcopyrite structure accompanied by redundant impurities such as copper sulfide, while the two-step electrodeposition method needs to deposit copper and indium coatings successively, and the preparation process is complicated
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[0014] Prepare 50mL of 5mM copper chloride solution, add 0.2M triethanolamine as a complexing agent, 0.01M sodium citrate as a buffer, adjust the electrodeposition solution to acidity with concentrated sulfuric acid, add 5mM indium chloride, and use sodium hydroxide Solution Adjust the pH of the solution to 4.0.
[0015] Using ITO conductive glass as the working electrode, platinum mesh as the counter electrode, and SCE as the reference electrode, the circuit was connected for electrochemical deposition, the deposition potential was -1000mV (relative to SCE), and the deposition time was 30min.
[0016] After the film is dried, it is subjected to vulcanization heat treatment, the film is placed in the quartz tube of the tube furnace, 2g of sulfur powder is weighed and placed in the direction of the inlet of the quartz tube, and nitrogen gas is passed for 5 minutes before the heat treatment to drive out the air in the quartz tube. The temperature was raised to 450°C for 90 minut...
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Abstract
The invention relates to a method for preparing a copper, indium and sulfur thin film, and belongs to the technical field of photoelectric materials. The key characteristic is that a copper and indium alloy film is prepared by an electrochemical deposition method; and the copper, indium and sulfur alloy film is obtained by a vulcanizing and annealing method. The copper, indium and sulfur thin film prepared by the method does not contain scattered phases; columnar particles are formed on the surface and compactly and uniformly connected with one another; the absorption coefficient is up to 10<5> cm<1> magnitude order; the band gap is close to the optimal value 1.45 eV required by a solar battery material; and the method is simple, economic and environment-friendly.
Description
technical field [0001] The invention relates to a preparation method of a copper indium sulfur solar thin film material, which belongs to the technical field of photoelectric materials. Background technique [0002] Copper indium sulfide is a semiconductor material with a direct band gap. Its forbidden band width is close to the optimal value required for solar cell materials. At the same time, due to its high absorption coefficient and intrinsic defect self-doping, it allows a wide range of composition deviation from the stoichiometric ratio. And other characteristics, become one of the most promising optoelectronic materials. [0003] At present, the preparation methods of copper indium sulfur thin films are mostly researched on vacuum multi-component co-evaporation method, sputtering method, electrodeposition method, etc., but the above-mentioned methods all have certain defects. Among them, the vacuum ternary evaporation method usually places the material on On the fila...
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IPC IPC(8): C25D3/58C25D5/50H01L31/032H01L31/04
CPCY02E10/50
Inventor 元炯亮邵婵
Owner BEIJING UNIV OF CHEM TECH