Solar cell structure and preparation method thereof

Abstract

The invention relates to a solar cell structure and a preparation method thereof. The solar cell structure comprises a silicon wafer substrate; a front surface field of an antireflection coating is coated on the front side of the substrate; an intrinsic hydrogenated amorphous-silicon layer, a p-type hydrogenated amorphous-silicon layer, a transparent conducting oxide (TCO) and an Al back surface field are sequentially arranged on the back side of the substrate, and the TCO is also coated on fine grid lines of a front electrode on the front surface field. The preparation method includes the steps that the substrate is textured firstly, then a diffusion technology is performed, the front surface field is formed on the front side of the substrate, the antireflection coating is deposited on the surface of the front surface field, and the front electrode is produced; and the intrinsic hydrogenated amorphous-silicon layer, the p-type hydrogenated amorphous-silicon layer and the TCO are sequentially deposited on the back side, and the Al back surface field is evaporated at last. The solar cell structure and the preparation method thereof have the advantages that a passive film of an amorphous-silicon thin film is used, therefore the long-time high-temperature process is avoided, the band gap can be broadened, and an open-circuit voltage can be increased; additionally, the TCO film is coated on the cell surface, broken grid lines can be connected, the series resistance of the cell can be reduced, and the metal electrode can be protected from being oxidized.

Description

Technical field [0001] The invention relates to a solar cell structure and a preparation method thereof. Background technique [0002] Due to the poor quality of silicon wafers used in the industry, if the silicon dioxide passivation film is formed through high-temperature thermal oxidation, its performance will be further deteriorated; in order to reduce the light-shielding area of ​​the electrode, the width of the fine grid electrode is required to be reduced, while for wire For screen printing, the finer the grid, the more likely it is to break the grid, and the larger the size of the slurry particles and the longer the slurry stays on the screen will cause the screen to block and form a broken grid. In addition, the solar cell The electrodes on the surface are prone to oxidation when exposed to the outside. All of the above will increase the series resistance of the solar cell and affect its performance. Summary of the invention [0003] The technical problem to be solved by ...

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Problems solved by technology

[0002] Due to the poor quality of silicon wafers used in industry, if the silicon dioxide passivation film is formed through high-temperature thermal oxidation, its performance will be further deteriorated; For screen printing, the finer the fine grid, the easier it is to break the grid, and the larger the size of the slurry particles, the longer the slurry stays on the screen, etc. will cause the screen to be blocked and form a broken grid. The electrodes on the surface are exposed to the outside and are prone to oxidation, which will increase the series resistance of the solar cell and affect its performance

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