Covering member and manufacture method thereof
A coated and hard technology, applied in the field of coated parts and its manufacturing, can solve problems such as limitations, inability to play an anti-oxidation effect, and poor anti-oxidation effect
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Embodiment 1
[0058] Plasma cleaning: the argon flow rate is 280 sccm, the bias voltage of the hard substrate 11 is -300V, and the plasma cleaning time is 9 minutes;
[0059] Sputtering of the transition layer 13: 100 sccm of argon gas is introduced, the bias voltage applied to the hard substrate 11 is -50V, the chromium target 22 is turned on, the power is set to 8kw, and the deposition time is 10min.
[0060] Sputtering chromium nitride layer 151: the flow rate of argon gas is 100 sccm, the flow rate of nitrogen gas is 10 sccm, the chromium target 22 is turned on, its power is set to 1kw, the bias voltage applied to the hard substrate 11 is -100V, and the deposition takes 20 minutes;
[0061] Sputtering the hafnium nitride layer 153: the flow rate of argon gas is 100 sccm, the flow rate of nitrogen gas is 10 sccm, the hafnium target 23 is turned on, a bias voltage of -100V is applied to the hard substrate 11, and the deposition is performed for 60 minutes.
[0062] Molybdenum nitride laye...
Embodiment 2
[0065] Plasma cleaning: the argon flow rate is 280 sccm, the bias voltage of the hard substrate 11 is -300V, and the plasma cleaning time is 9 minutes;
[0066] Sputtering transition layer 13: 100 sccm of argon gas is introduced, the bias voltage of -100V is applied to the hard substrate 11, the chromium target 22 is turned on, the power is set to 10kw, and the deposition time is 20min.
[0067] Sputtering of chromium nitride layer 151: argon gas flow of 100 sccm, nitrogen gas flow rate of 40 sccm, chromium target 22 was turned on, its power was set to 2kw, the bias voltage of hard substrate 11 was set to -150V, and deposition was carried out for 25 minutes;
[0068] Sputtering the hafnium nitride layer 153: Argon gas flow rate is 100 sccm, nitrogen gas is set to 40 sccm, the hafnium target 23 is turned on, a bias voltage of -200V is applied to the hard substrate 11, and the deposition is carried out for 70 minutes.
[0069] Molybdenum nitride layer 155 was sputtered: Argon ga...
Embodiment 3
[0072] Plasma cleaning: the argon flow rate is 280 sccm, the bias voltage of the hard substrate 11 is -300V, and the plasma cleaning time is 9 minutes;
[0073] Sputtering the transition layer 13: Argon gas flow rate is 100 sccm, the bias voltage applied on the hard substrate 11 is -100V, the chromium target 22 is turned on, the power is set to 13kw, and the deposition time is 30min.
[0074] Sputtering the chromium nitride layer 151: the flow rate of argon gas is 100 sccm, the flow rate of nitrogen gas is 70 sccm, the chromium target 22 is turned on, its power is set to 3kw, the bias voltage of the hard substrate 11 is set to -300V, and the deposition is carried out for 30 minutes;
[0075] Sputtering the hafnium nitride layer 153: the argon gas flow rate is 100 sccm, the nitrogen gas flow rate is 70 sccm, the hafnium target 23 is turned on, a bias voltage of -300V is applied to the hard substrate 11, and the deposition takes 90 minutes.
[0076] Molybdenum nitride layer 155 ...
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