Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Texture liquid for preparing submicron suede-like monocrystalline silicon wafer and preparation method thereof

A sub-micron, single-crystal silicon wafer technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problem of unfavorable uniformity of metal-silicon contact, affecting texture stability, and high cell fragmentation rate. problems, to achieve the effect of increasing the light absorption specific surface area, increasing the nucleation density, and reducing the process time

Inactive Publication Date: 2012-10-24
ZHEJIANG UNIV
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The texturing liquid currently in use mainly contains sodium hydroxide, sodium silicate, isopropanol, deionized water, etc. This texturing liquid has the following problems: the sodium silicate produced by the reaction accumulates in the velvet tank, affecting the texture The stability of the structure, the yield is difficult to control; the pyramid on the silicon surface after texture is too large (6~10 microns), and the uniformity is poor, which is not conducive to the uniformity of the diffusion junction depth in the subsequent channel and the contact between metal and silicon in the silk printing process; silicon wafer corrosion Large quantity, high cell fragmentation rate, and serious waste; long process time, usually more than 30 minutes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Texture liquid for preparing submicron suede-like monocrystalline silicon wafer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0015] The preparation method of the texture liquid is as follows: first, deionized water is added into the velvet-making tank, and inorganic bases, lower alcohols, anionic or nonionic surfactants, inorganic bases, lower alcohols, anions or The weight ratio of non-ionic surfactant and deionized water is: 1-5:2-10:0.1-1:100, continue stirring for 10-30 minutes to fully dissolve and mix, and obtain the prepared submicron velvet Texturing fluid for planar monocrystalline silicon wafers.

[0016] Immerse the monocrystalline silicon wafer for solar cells in the above texturing solution for surface texturing. The texturing temperature is 80 degrees and the texturing time is 15 minutes. A uniform, sub-micron pyramid structure can be formed on the surface of the silicon wafer.

[0017] , so as to prepare a single crystal silicon wafer with a uniform, submicron textured structure. No sodium silicate is added during the texturing process, which reduces the corrosion of single crystal s...

Embodiment 1

[0020] First add 100 kg of deionized water into the velvet tank, then add 1.5 kg of sodium hydroxide, 4 kg of isopropanol, and 0.2 kg of sodium dodecylsulfonate in sequence under stirring, and continue stirring for 20 minutes to fully Dissolve, mix. The monocrystalline silicon wafer for solar cells is immersed in the above texturing liquid to carry out surface texturing, the texturing temperature is 80 degrees, and the texturing time is 15 minutes.

[0021] figure 1 The scanning electron microscope photos of the silicon wafers etched by the texture solution prepared in this example are given. It can be seen from the figure that the size of the formed pyramids is about 0.2 microns, and the distribution is uniform and the coverage is high.

Embodiment 2

[0023] First add 100 kg of deionized water into the velvet tank, then add 1 kg of sodium hydroxide, 2 kg of ethanol, and 0.1 kg of sodium dodecylbenzenesulfonate in turn under stirring conditions, and continue stirring for 10 minutes to fully dissolve it ,mix. Immerse the monocrystalline silicon wafer for solar cells in the above texturing liquid for surface texturing, the texturing temperature is 80°C, and the texturing time is 15 minutes, to obtain a monocrystalline silicon wafer with a uniform submicron textured structure.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses texture liquid for preparing a submicron suede-like monocrystalline silicon wafer and a preparation method thereof. The texture liquid comprises the following components: inorganic base, lower alcohol, an anion or non-ionic surfactant and the balance of deionized water. The preparation method of the texture liquid comprises the following steps of: adding the deionized water into a texture etching groove; sequentially adding the inorganic base, the lower alcohol and the anion or non-ionic surfactant under the stirring condition; and continuously stirring for 10 to 30 minutes to ensure the raw materials to be sufficiently dissolved and mixed. A uniform and submicron pyramid structure can be formed on the surface of the silicon wafer by the texture liquid; and the texture liquid has high coverage rate, excellent texture effect and simple process and is easy to implement.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon wafer preparation, in particular to a texturing liquid capable of preparing single crystal silicon wafers with a submicron suede structure and a preparation method of the texturing liquid. technical background [0002] Texture, also known as velvet, uses the principle of light trapping to make the incident light reflect multiple times to prolong its propagation path on the surface of the battery, thereby improving the light absorption efficiency of solar cells. Using the principle of anisotropic etching of silicon, a pyramid-like structure can be formed on the surface of single crystal silicon, effectively reducing the reflectivity of sunlight. In addition, on a substrate of the same size, the p-n junction area of ​​the textured photovoltaic cell is much larger than that of the light surface, which can improve the short-circuit current and the collection probability of photogenerate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C23F1/32
Inventor 韩延刚吴琳琳余学功王栋
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products