HEMT (high electron mobility transistor) with high breakdown voltage and manufacturing method of HEMT

Abstract

The invention discloses an HEMT (high electron mobility transistor) which comprises a substrate, a buffer layer on the substrate, a first band gap material layer on the buffer layer, a second band gap material layer on the first band gap material layer, a source and drain electrode combination and a gate electrode. The source and drain electrode combination is connected with the first band gap material layer, and the gate electrode is connected with the second band gap material layer. The HEMT is characterized in that the substrate is an epitaxial silicon layer on an insulator substrate, and the epitaxial silicon layer grows on a local amorphous dielectric material buried in the insulator substrate. According to the HEMT and the manufacturing method thereof, as a device is formed on the ultra-thin local SOI substrate, transverse breakdown in the ultra-thin epitaxial silicon layer along the horizontal direction is difficult to be caused even if higher source and drain electrode voltage is exerted, and longitudinal breakdown is difficult to be caused due to a blocking effect of a buried amorphous insulating layer in the vertical direction. Accordingly, breakdown voltage of the device can be greatly increased by the aid of the HEMT, and reliability of the device is improved.

Description

technical field [0001] The invention relates to a high electron mobility transistor (HEMT) with high breakdown voltage and its manufacturing method, in particular to an AlGaN / GaN HEMT on a silicon substrate with high breakdown voltage and its manufacturing method. Background technique [0002] To conduct electricity, semiconductors are doped with impurities that release mobile electrons (or holes). However, these electrons first collide with the impurity (dopant) used to generate these electrons to be decelerated, a phenomenon generally called ionized impurity scattering. Unlike the usual Metal Oxide Field Effect Transistor (MOSFET) which uses the doped region as the channel region, the High Electron Mobility Transistor (HEMT) is a junction between two different bandgap materials (that is, a heterojunction ) as a field effect transistor in the channel region. HEMTs use a highly doped wide-bandgap n-type donor layer (or control layer, generally AlGaN in the present inventio...

AI Technical Summary

Problems solved by technology

Due to process reasons, it is difficult to obtain a thick GaN layer with good performance

Therefore, at present, the high-voltage breakdown of HEMT always occurs in the silicon substrate, that is, the GaN under the source and drain is broken down at the same time, and the silicon substrate between the buffer layer and the source and drain is formed, such as figure 1 The current path indicated by the arrow leads to the destruction of the device

[0007] All in all, current HEMTs on silicon substrates have poor withstand voltage performance and are prone to breakdown, resulting in device damage

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