Mixed crystal face vertical channel Si-based BiCMOS integrated device and preparation method thereof

Abstract

The invention discloses a mixed crystal face vertical channel Si-based BiCMOS integrated device and a preparation method thereof. The preparation method comprises the following steps of: growing N-type Si epitaxy on an SOI (Silicon On Insulator) substrate to form a collector region, sequentially performing wet etching to obtain base region windows, selectively growing a SiGe base region, and preparing a Poly-Si emitter region, a Poly-Si emitting electrode and a collector electrode to form a SiGe HBT device; respectively photoetching active region grooves of NMOS and PMOS devices, selectively growing corresponding active layers in the active region grooves of the NMOS and PMOS devices along different crystal faces, and preparing a drain electrode and a grid electrode in the active region of the PMOS device to form the PMOS device; preparing a grid dielectric layer and grid polycrystalline in the active region of the NMOS device to form the NMOS device; and photoetching a lead wire to form the mixed crystal face vertical channel Si-based BiCMOS integrated device and a circuit. The three electrodes of the SiGe HBT device in the mixed crystal face vertical channel Si-based BiCMOS device all adopt polysilicon, and the CMOS device fully utilizes the characteristic of anisotropic mobility of a strain Si material in the manufacturing process for preparing the BiCMOS integrated circuit with enhanced performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a mixed crystal plane vertical channel Si-based BiCMOS integrated device and a preparation method. Background technique [0002] The integrated circuit, which appeared in 1958, is one of the most influential inventions of the 20th century. Microelectronics based on this invention has become the basis of existing modern technology, accelerating the process of knowledge and informationization of human society, and at the same time changing the way of thinking of human beings; it not only provides human beings with powerful It is not only a tool for transforming nature, but also opens up a broad space for development. [0003] Semiconductor integrated circuits have become the basis of the electronics industry. People's huge demand for the electronics industry has prompted the rapid development of this field. In the past few decades, the rapid d...

AI Technical Summary

Problems solved by technology

Although the frequency characteristics of GaAs and InP-based compound devices are superior, their preparation process is more complicated than Si process, the cost is high, the preparation of large diameter single crystal is difficult, the mechanical strength is low, the heat dissipation performance is not good, it is difficult to be compatible with Si process, and there is a lack of SiO 2 Such passivation layer and other factors limit its wide application and development.

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