Method for preparing Sm2O3 semiconductor nanocrystals with hexagonal sheet structures

A hexagonal sheet-like semiconductor technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of easy powder agglomeration process cycle, low raw material utilization rate, easy powder agglomeration, etc., to reduce the phenomenon of agglomeration , avoid structural defects, and avoid the effect of introducing impurities

Inactive Publication Date: 2013-01-30
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The low-temperature self-propagating combustion method and the sol-gel method are high-temperature synthesis of Sm under oxygen atmosphere 2 o 3 , the powder is easy to agglomerate and the sol-gel process cycle is long, for Sm 2 o 3 The utilization rate of raw materials is very small; and the solid phase sintering method is sintered under reducing atmosphere conditions, which will also cause the agglomeration of nanocrystals and abnormal growth of particles
At the same time, the precursor prepared by the microemulsion method also needs high temperature heat treatment to obtain Sm 2 o 3 Nano-crystalline, which is easy to introduce impurities, and the powder is easy to agglomerate

Method used

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  • Method for preparing Sm2O3 semiconductor nanocrystals with hexagonal sheet structures
  • Method for preparing Sm2O3 semiconductor nanocrystals with hexagonal sheet structures

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Experimental program
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Effect test

Embodiment 1

[0020] 1) The analytically pure SmCl 3 ·6H 2 O was added to isopropanol and stirred with a magnetic stirrer to prepare Sm 3+ Solution A with a concentration of 0.5mol / L;

[0021] 2) Heat and stir solution A at 45°C, adjust the pH value of solution A to 9 with NaOH solution with a concentration of 1mol / L, continue stirring for 1 hour to form a precursor solution, and then add hexadecyltri Methyl ammonium bromide (CTAB), the ratio of the amount of substance of its add-on and product theoretical output is n=0.5, confirms again that the pH value of precursor solution is 9;

[0022] 3) Pour the precursor solution into the hydrothermal kettle, the filling degree is controlled at 50%, then seal the hydrothermal kettle, put it into a DHG-9075A electric blast drying oven, and control the hydrothermal temperature to 120°C. The pressure is 8MPa, react for 48 hours, and naturally cool to room temperature after the reaction;

[0023] 4) Turn on the hydrothermal kettle, take out the pro...

Embodiment 2

[0025] 1) The analytically pure SmCl 3 ·6H 2 O was added to isopropanol and stirred with a magnetic stirrer to prepare Sm 3+ Solution A with a concentration of 0.2mol / L;

[0026] 2) Heat and stir solution A at 50°C, use NaOH solution with a concentration of 2mol / L to adjust the pH value of solution A to 10, continue stirring for 1.5 hours to form a precursor solution, and then add hexadecyltri Methyl ammonium bromide (CTAB), the ratio of the amount of substance of its add-on and product theoretical output is n=1; Confirm again that the pH value of precursor solution is 10;

[0027] 3) Pour the precursor solution into the hydrothermal kettle, the filling degree is controlled at 55%, then seal the hydrothermal kettle, put it into a DHG-9075A electric blast drying oven, and control the hydrothermal temperature to 150°C. The pressure is 15MPa, react for 60 hours, and naturally cool to room temperature after the reaction;

[0028] 4) Open the hydrothermal kettle, take out the p...

Embodiment 3

[0030] 1) The analytically pure SmCl 3·6H 2 O was added to isopropanol and stirred with a magnetic stirrer to prepare Sm 3+ Solution A with a concentration of 0.1mol / L;

[0031] 2) Heat and stir solution A at 48°C, adjust the pH value of solution A to 11 with NaOH solution with a concentration of 2mol / L, continue stirring for 2 hours to form a precursor solution, and then add hexadecyltri Methyl ammonium bromide (CTAB), the ratio of the amount of substance of its add-on and product theoretical output is n=2; Confirm again that the pH value of precursor solution is 11;

[0032] 3) Pour the precursor solution into the hydrothermal kettle, the filling degree is controlled at 50%, then seal the hydrothermal kettle, put it into the DHG-9075A type electric blast drying oven, control the hydrothermal temperature to 180°C, The pressure is 20MPa, react for 72 hours, and naturally cool to room temperature after the reaction;

[0033] 4) Open the hydrothermal kettle, take out the pro...

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Abstract

The invention discloses a method for preparing Sm2O3 semiconductor nanocrystals with hexagonal sheet structures. The method comprises the following steps of: adding analytically pure SmCl3.6H2O into isopropanol to obtain a solution A; adjusting the pH value of the solution A to be 7 to 12 by using a NaOH solution to obtain a precursor solution, and adding cetyl trimethyl ammonium bromide (CTAB) into the precursor solution; pouring the precursor solution into a hydrothermal kettle, sealing the hydrothermal kettle, controlling hydrothermal temperature to be 120 to 200 DEG C and pressure to be 2 to 20MPa, reacting for 6 to 60 hours, and after reaction, naturally cooling to room temperature; and taking a product out, washing the product by using absolute ethanol, performing centrifugal separation, repeating for multiple times, and drying to obtain the Sm2O3 semiconductor nanocrystals with the hexagonal sheet structures. According to the method, the reaction for preparing the Sm2O3 nanocrystals with the hexagonal sheet structures is finished in a liquid phase at one time, and the later-stage crystallization thermal treatment is not required, so that the defects that agglomeration and grain coarsening which are caused in the thermal treatment process of the Sm2O3 nanocrystals, and impurities are introduced by atmosphere reaction can be avoided.

Description

technical field [0001] The present invention relates to a Sm 2 o 3 A method for preparing nanocrystals, in particular to a solvothermal method for preparing hexagonal sheet-like structure Sm 2 o 3 Methods for semiconductor nanocrystals. Background technique [0002] SM 2 o 3 It is a light yellow powder, easy to deliquescence, insoluble in water, soluble in inorganic acid. SM 2 o 3 It is a new generation of energy conversion materials, semiconductor materials and high-performance catalyst materials. Nano Sm 2 o 3 Can also be used for ceramic capacitors. In terms of magnetic materials, nano Sm 2 o 3 It is mainly used to prepare rare earth permanent magnet materials; in addition, Sm 2 o 3 Thin films can also be used in electronic devices, magnetic materials and optical filters of special glass, and have broad development prospects. [0003] SM 2 o 3 The crystal has three crystal forms, which belong to the oxide of polycrystalline phase transformation. It is a ...

Claims

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Application Information

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IPC IPC(8): C01F17/00B82Y30/00
Inventor 殷立雄黄剑锋郝巍李嘉胤吴建鹏曹丽云费杰
Owner SHAANXI UNIV OF SCI & TECH
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