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Preparation method for cubic-phase Sm2O3 nanorod semiconductor material

A nanorod and semiconductor technology, applied in the direction of nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of easy powder agglomeration process cycle, low raw material utilization rate, easy powder agglomeration, etc., to avoid the introduction of impurities and Effects of structural defects, controllable grain growth, and avoidance of agglomeration

Inactive Publication Date: 2013-01-30
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The low-temperature self-propagating combustion method and the sol-gel method are high-temperature synthesis of Sm under oxygen atmosphere 2 o 3 , the powder is easy to agglomerate and the sol-gel process cycle is long, for Sm 2 o 3 The utilization rate of raw materials is very small; and the solid phase sintering method is sintered under reducing atmosphere conditions, which will also cause the agglomeration of nanocrystals and abnormal growth of particles
At the same time, the precursor prepared by the microemulsion method also needs high temperature heat treatment to obtain Sm 2 o 3 Nano-crystalline, which is easy to introduce impurities, and the powder is easy to agglomerate

Method used

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  • Preparation method for cubic-phase Sm2O3 nanorod semiconductor material
  • Preparation method for cubic-phase Sm2O3 nanorod semiconductor material

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Experimental program
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Effect test

Embodiment 1

[0021] 1) Analytical pure Sm(NO 3 ) 3 ·6H 2 O was added to deionized water and stirred with a magnetic stirrer to prepare Sm 3+ Solution A with a concentration of 0.5mol / L;

[0022] 2) Heat and stir solution A at 40°C, adjust the pH value of solution A to 6 with NaOH solution with a concentration of 1mol / L, and continue stirring for 1 hour to form a precursor solution;

[0023] 3) Pour the precursor solution into the hydrothermal kettle, control the filling degree at 50%, then seal the hydrothermal kettle, put it into the DHG-9075A electric blast drying oven, control the hydrothermal temperature to 180 ° C, and the pressure to be 8MPa, react for 48 hours, naturally cool to room temperature after the reaction;

[0024] 4) Turn on the hydrothermal kettle, take out the product, wash it with deionized water and centrifuge it, then wash it with deionized ethanol and centrifuge it, repeat the washing with deionized water and absolute ethanol for 6 times, and then place it in a Z...

Embodiment 2

[0026] 1) Analytical pure Sm(NO 3 ) 3 ·6H 2 O was added to deionized water and stirred with a magnetic stirrer to prepare Sm 3+ Solution A with a concentration of 0.2mol / L;

[0027] 2) Heat and stir solution A at 35°C, adjust the pH value of solution A to 9 with NaOH solution with a concentration of 2mol / L, and continue stirring for 1.5 hours to form a precursor solution;

[0028] 3) Pour the precursor solution into the hydrothermal kettle, the filling degree is controlled at 55%, then seal the hydrothermal kettle, put it into the DHG-9075A electric blast drying oven, control the hydrothermal temperature to 200°C, and the pressure to be 15MPa, react for 60 hours, naturally cool to room temperature after the reaction;

[0029] 4) Open the hydrothermal kettle, take out the product, wash it with deionized water and centrifuge it, then wash it with anhydrous ethanol and centrifuge it, repeat the washing with deionized water and anhydrous ethanol 4 times in turn, and place it i...

Embodiment 3

[0031] 1) Analytical pure Sm(NO 3) 3 ·6H 2 O was added to deionized water and stirred with a magnetic stirrer to prepare Sm 3+ Solution A with a concentration of 0.1mol / L;

[0032] 2) Heat and stir solution A at 45°C, adjust the pH value of solution A to 10 with NaOH solution with a concentration of 3.5mol / L, and continue stirring for 2 hours to form a precursor solution;

[0033] 3) Pour the precursor solution into the hydrothermal kettle, the filling degree is controlled at 50%, then seal the hydrothermal kettle, put it into the DHG-9075A electric blast drying oven, control the hydrothermal temperature to 160°C, and the pressure to be 20MPa, react for 72 hours, naturally cool to room temperature after the reaction;

[0034] 4) Open the hydrothermal kettle, take out the product, wash it with deionized water and centrifuge it, then wash it with anhydrous ethanol and centrifuge it, wash it repeatedly with deionized water and anhydrous ethanol for 5 times, then place it in a...

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Abstract

The invention discloses a preparation method for cubic-phase Sm2O3 nanorod semiconductor material, which comprises the following steps of: adding analytically-pure Sm(NO3)3.6H2O into deionized water; stirring to obtain solution A; regulating the pH (potential of hydrogen) value of the solution A to 6-12 by NaOH solution to form precursor solution; pouring the precursor solution into a hydrothermal kettle; sealing the hydrothermal kettle; putting the hydrothermal kettle into an electrothermal blowing dry box; after heating and pressurizing reaction is finished, naturally cooling to the room temperature; taking out a product; washing by deionized water, and carrying out centrifugal separation; washing by absolute ethyl alcohol; carrying out centrifugal separation; and after repeatedly washing by the deionized water and the absolute ethyl alcohol successively, drying to obtain the cubic-phase Sm2O3 nanorod semiconductor material.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor material, in particular to a cubic phase Sm 2 o 3 A method for preparing a nanorod semiconductor material. Background technique [0002] SM 2 o 3 It is a light yellow powder, easy to deliquescence, insoluble in water, and easily soluble in inorganic acids. SM 2 o 3 It is a new generation of energy conversion materials, semiconductor materials and high-performance catalyst materials. Nano Sm 2 o 3 Can also be used for ceramic capacitors. In terms of magnetic materials, nano Sm 2 o 3 It is mainly used to prepare rare earth permanent magnet materials; in addition, Sm 2 o 3 Thin films can also be used in electronic devices, magnetic materials and optical filters of special glass, and have broad development prospects. [0003] SM 2 o 3 The crystal has three crystal forms, which belong to the oxide of polycrystalline phase transformation. It is a monoclinic crystal phase at room ...

Claims

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Application Information

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IPC IPC(8): C01F17/00B82Y30/00
Inventor 殷立雄黄剑锋郝巍李嘉胤吴建鹏曹丽云费杰
Owner SHAANXI UNIV OF SCI & TECH