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Silicon carbide crystal growth method for increasing crystal growth rate

A technology of crystal growth and silicon carbide, applied in crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low utilization rate of silicon carbide powder source, low average crystal growth rate, etc., to improve the average crystal growth rate. rate, weaken crystallization, increase the effect of sublimation

Active Publication Date: 2013-01-30
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The purpose of the present invention is to provide a silicon carbide crystal growth method for increasing the crystal growth rate, which solves the problems of low average crystal growth rate and low utilization rate of silicon carbide powder source in the prior art

Method used

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  • Silicon carbide crystal growth method for increasing crystal growth rate
  • Silicon carbide crystal growth method for increasing crystal growth rate
  • Silicon carbide crystal growth method for increasing crystal growth rate

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Embodiment 1

[0028] The silicon carbide crystal growth method that the present invention is used for improving crystal growth rate, carries out following steps successively:

[0029] Step 1, such as figure 2 As shown, the outer shape of the crucible 8 used in the present invention is cylindrical and made of graphite, and the inner cavity of the crucible 8 includes six circular subpackage areas 81 for holding silicon carbide powder sources. The cross-sections of the packing areas 81 are all circular and are evenly arranged in a honeycomb shape in the horizontal direction, specifically: one of the circular packing areas 81 is located at the center of the crucible 8, and the other five are evenly distributed on the outside of the crucible. The crucible 8 has an integrated structure, that is, the intervals between the five sub-packaging regions 81 are of the same material and integrated structure, which is beneficial to the consistency of the reaction of the silicon carbide source at high tem...

Embodiment 2

[0035] The difference between this embodiment and Embodiment 1 lies in that in step 1, the structure of the crucible 8 used is different. Such as image 3 As shown, in this embodiment, the inner cavity of the crucible 8 includes four fan-shaped sub-package areas 82 for holding silicon carbide powder sources. The cross-sections of the four fan-shaped sub-package areas 82 are fan-shaped and horizontally The center of the crucible is distributed circumferentially. The crucible 8 has an integrated structure, that is, the intervals between the four fan-shaped sub-packaging areas 82 are of the same material and integrated structure, which is conducive to the consistency of the reaction of the silicon carbide source at high temperature. The bottom surface of the graphite column is provided with external threads, the bottom of the crucible is provided with threaded holes, and the graphite column is connected to the crucible through threads. First fix the graphite column on the botto...

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Abstract

The invention discloses a silicon carbide crystal growth method for increasing a crystal growth rate. The silicon carbide crystal growth method specifically comprises the following steps: manufacturing a graphite column; filling silicon carbide powder resource into a crucible, and then inserting the graphite column into the silicon carbide powder resource, and placing the crucible assembly into a growth device; firing the silicon carbide powder resource and removing the impurities; taking the graphite column out of the crucible; and performing crystal growth operation. According to the silicon carbide crystal growth method, the problems of the prior art that the use ratio of the silicon carbide powder resource is not high and the average growth rate of the crystal is low are solved.

Description

technical field [0001] The invention belongs to the technical field of artificial crystal growth, and in particular relates to a silicon carbide crystal growth method for increasing the crystal growth rate. Background technique [0002] The third-generation semiconductor material silicon carbide (SiC) has the characteristics of wide band gap, high critical avalanche breakdown electric field strength, high electron saturation drift velocity, high thermal conductivity, high temperature resistance, radiation resistance and corrosion resistance. Electronic devices, high-power solid-state microwave devices, solid-state sensors and other new devices, as well as the preferred materials for high-temperature-resistant integrated circuits, are widely used in petroleum, chemical, automotive, aviation, aerospace, communications, weapons and other industries. [0003] Silicon carbide has no liquid phase under normal engineering conditions, and begins to sublime into gas at about 1800°C u...

Claims

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Application Information

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IPC IPC(8): C30B23/00
Inventor 封先锋陈治明马剑平蒲红斌臧源
Owner XIAN UNIV OF TECH
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