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Preparation method of polycrystalline silver platinum alloy plasma thin-film material

A plasma and thin-film material technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of complicated preparation process, achieve low loss, small surface roughness, and great application prospects. Effect

Inactive Publication Date: 2015-02-18
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In order to overcome the intrinsic loss of materials, Khurgin et al. proposed to use gain media (such as different dye molecules such as rhodamine 800 and rhodamine 6G) to compensate for the loss, but this method usually requires a strong excitation light source (such as modulation Q pump laser) which will inevitably introduce additional noise and complicate the fabrication process

Method used

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  • Preparation method of polycrystalline silver platinum alloy plasma thin-film material
  • Preparation method of polycrystalline silver platinum alloy plasma thin-film material
  • Preparation method of polycrystalline silver platinum alloy plasma thin-film material

Examples

Experimental program
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Effect test

Embodiment 1

[0031] To clean the monocrystalline silicon substrate, put the pre-cut silicon wafer of 15 mm×8 mm into acetone for 8-10 minutes and ultrasonically clean it for 8-10 minutes, then put it in absolute ethanol for 8-10 minutes, and then place the The slices were put into ultrapure water and sonicated for 8-10 minutes. After immersing the cleaned substrate in 4% hydrofluoric acid for 20 seconds, take it out and dry it.

[0032] Put the cleaned substrate into the sputtering chamber, and place the prepared multiple silver-platinum alloy composite targets on the sputtering target position (according to different composition requirements, place different numbers of platinum sheets respectively).

[0033] Ag was deposited on a silicon substrate by DC reactive magnetron sputtering 1-x Pt x Alloy thin film, use the imported vacuum molecular pump to pump the back vacuum to 1.5×10 -4 Pa. In the DC reactive magnetron sputtering deposition step, argon is the reactive sputtering gas, the...

Embodiment 2

[0037] As in Example 1, four platinum sheets and a silver target are used to form a composite target, and the silver-platinum alloy film is obtained according to the process in Example 1, and the composition of the film is Ag-25at%Pt alloy obtained by X-ray photoelectron spectroscopy analysis. film.

[0038] The tube furnace GSL-1500X-50 with argon protection function produced by Hefei Kejing Company was used for annealing, and the annealing temperatures were set at 100 °C, 200 °C and 300 °C, respectively. Utilize X-ray diffractometer to obtain the diffractogram (as Figure 4 As shown), the crystal phase and grain size distribution were analyzed, and the grain size in the obtained alloy film was dominated by Ag (200) orientation, and the average grain size was about 15 nm.

[0039] Utilize the ellipsometer produced by J.A. Woollam Company of the United States to measure the dielectric function of the Ag-25at%Pt alloy film after different annealing temperatures, such as Figu...

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Abstract

The invention belongs to the technical field of novel metal and alloy materials in new materials, and in particular relates to a polycrystalline silver platinum alloy plasma thin-film material and a preparation method thereof. The general formula of the thin-film material is Ag1-xPtx, wherein x represents the atomic percent of Pt in alloy and ranges 4-25%, and the thickness of the thin-film material is 50-200 nanometers. The polycrystalline silver platinum alloy plasma thin-film material is prepared by a magnetron sputtering technique, a utilized sputtering target is a composite target which has the same components as the silver platinum alloy plasma thin-film material to be sputtered, sputtering gas is argon, one-four pure platinum wafers are respectively arranged on a pure silver substrate target, the ratio of the total sputtering area of the pure platinum wafers to the sputtering silver target is 0.04-0.16, and the loss of the alloy thin-film material can be remarkably reduced through a suitable annealing treatment. The preparation method disclosed by the invention is simple, the raw materials are easy to obtain, and the cost is relatively lower; and the plasma property of the thin-film material disclosed by the invention is better than that of common metal, such as copper and gold, in a visible light frequency range and even is close to that of metal silver in some special areas so that the polycrystalline silver platinum alloy plasma thin-film material is an excellent plasma low-loss substrate.

Description

technical field [0001] The invention belongs to the technical field of novel metal and alloy materials in new materials, and in particular relates to a polycrystalline silver-platinum alloy plasma thin film material and a preparation method thereof. Background technique [0002] The field of plasma has been receiving great attention recently. Surface plasmon is a field distribution existing at the interface between metal and dielectric material, and it is mainly composed of surface plasmon wave and localized surface plasmon. It mainly has two obvious Features: 1. Provide a method to introduce visible light to the half-wave scale; 2. Provide local stronger light field intensity. From the first feature, we can find that plasmonic technology provides a bridge for the control of light at the nanoscale, and can introduce visible light waves into the nanoscale, resulting in many novel phenomena. In addition, due to the strong surface local field in plasmonic materials, it has a w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C5/06C23C14/35C23C14/16
Inventor 周济杨广孙竞博李勃
Owner TSINGHUA UNIV
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