Copper-zinc-tin-sulfur micro/nano-fiber material and method for preparing same

A fiber material, copper-zinc-tin-sulfur technology, applied in the direction of fiber treatment, artificial filament of inorganic raw materials, textiles and papermaking, etc., to achieve the effect of accurate stoichiometric ratio, low impurity content and simple process

Inactive Publication Date: 2013-03-20
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

However, within the scope of the applicant's search, no one has used high-voltage electrospinning t

Method used

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  • Copper-zinc-tin-sulfur micro/nano-fiber material and method for preparing same
  • Copper-zinc-tin-sulfur micro/nano-fiber material and method for preparing same
  • Copper-zinc-tin-sulfur micro/nano-fiber material and method for preparing same

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Embodiment Construction

[0021] Cu(CH 3 COO) 2 ·H 2 O, Zn(CH 3 COO) 2 2H 2 O, SnCl 4 ·5H 2 O. PVP is dissolved in ethylene glycol methyl ether according to a certain ratio to prepare a precursor solution, wherein the molar ratio of each metal ion is Cu:Zn:Sn=2:1:1. The precursor micron fibers obtained by high-voltage electrospinning were successively passed through 2 In Ar gas, heat treatment at 450°C for 30 minutes, and finally vulcanization treatment at 500°C for 40 minutes to obtain the final CZTS micro-nanofibers. Its specific preparation process is as follows:

[0022] Step 1: Weigh 0.3993g of Cu(CH 3 COO) 2 ·H 2 O, 0.2195g of Zn(CH 3 COO) 2 2H 2 O. 5.81g of PVP was poured into a beaker, and 10ml of ethylene glycol methyl ether was added, and dissolved with magnetic stirring at room temperature to form a uniform solution A.

[0023] Step 2: Weigh 0.3506g of SnCl 4 ·5H 2 O in a beaker, add 2ml of ethylene glycol methyl ether to the beaker, and then add 0.64g of PVP, and ultrasonic...

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Abstract

A copper-zinc-tin-sulfur micro/nano-fiber material and a method for preparing the copper-zinc-tin-sulfur micro/nano-fiber material belong to the technical field of the electronic functional material. The micro/nano-fiber material contains four elements Cu, Zn, Sn and S, has the diameter ranging from 300 to 800 nanometers, and has a zinc stannite crystal structure, wherein the mol ratio of the four elements of Cu: Zn: Sn: S is 2: 1: 1: 4. During preparation, inorganic salts of Cu, Zn and Sn and PVP (Polyvinyl Pyrrolidone) are used as the raw materials, firstly, spinning precursor solution, then spraying the spinning precursor solution to a substrate to form precursor fibers through a high-voltage electrospinning process, and finally, obtaining the targe product through certain thermal treatment and vulcanization treatment. The method provided by the invention is simple in preparation equipment, low in cost, simple and convenient to operate, and the process is easy to control; and the target product prepared has accurate stoichiometric ratio, excellent crystal habit and single phase structure, thereby having potential application in the field of efficient solar photovoltaic cells.

Description

technical field [0001] The invention belongs to the technical field of electronic functional materials, and relates to novel photovoltaic cell materials, in particular to copper-zinc-tin-sulfur (Cu-Zn-S) with a specific crystal structure formed by four elements of Cu, Zn, Sn and S according to the stoichiometric ratio. 2 ZnSnS 4 , CZTS) compound semiconductor micro-nano fiber material and its preparation method. Background technique [0002] The preparation methods of micro-nano fibers include: photolithography directional etching method, template self-assembly growth method, high-voltage electrospinning method, etc. Among them, the high-voltage electrospinning method has been applied more and more because of its high efficiency and low consumption. At the beginning of the invention, high-voltage electrospinning technology was mainly used to prepare polymer nanofibers. With the improvement of technology and the deepening of research, high-voltage electrospinning technolog...

Claims

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Application Information

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IPC IPC(8): D01F9/08D01D5/00
Inventor 宋远强刘爱芳向勇张博胡家瑞周维为
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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