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Light-emitting diode and preparation method thereof

A technology of light-emitting diodes and light-emitting layers, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of poor charge transfer capability of quantum dots and affect the luminous efficiency of light-emitting diodes, and achieve high luminous efficiency and high-efficiency optoelectronics. The effect of conversion, efficient transfer of charge

Active Publication Date: 2013-03-27
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor charge transport ability of quantum dots, the luminous efficiency of light-emitting diodes is affected.

Method used

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  • Light-emitting diode and preparation method thereof
  • Light-emitting diode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Embodiment 1: the preparation of graphene / CdS quantum dot composite material.

[0034] Take a graphite oxide solution with a concentration of 0.5 mg / ml, add a certain amount of cadmium acetate dihydrate and mix, and the amount of the two is calculated by molar mass ratio, that is, graphite oxide: cadmium acetate dihydrate = 1:1; the mixture is evenly dispersed in In a certain volume of dimethyl sulfoxide solution, the amount of dimethyl sulfoxide solution is calculated based on the quality of graphite oxide, that is, 1 milliliter of dimethyl sulfoxide solution needs to be added for every 1 mg of graphite oxide; , transferred to a high-temperature reactor, and annealed at 180° C. for 12 hours. The product was repeatedly washed with acetone and ethanol, and then dried to obtain a graphene / CdS quantum dot composite material.

[0035] Of course, to realize the present invention, any graphene / quantum dot composite material preparation method disclosed in the prior art can al...

Embodiment 2

[0037] The method for preparing a light-emitting diode comprising a graphene / quantum dot light-emitting layer in this embodiment is:

[0038] 1) Deposit a layer of metal cathode 10 on the substrate 100 by sputtering, vapor deposition, spin coating and other methods;

[0039] 2) Depositing an electron transport layer 20 by sputtering, evaporation, spin coating and other methods;

[0040] 3) Dissolving the graphene / quantum dot composite material in an organic solvent such as toluene, coating it on the surface of the electron transport layer 20 by spin coating, etc., heating to remove the solvent, and forming an empty graphene / quantum dot light emitting layer 50;

[0041] 4) Deposit a layer of hole transport layer 30 by sputtering, vapor deposition, spin coating and other methods using triphenyldiamine as the material of the hole transport layer;

[0042] 5) Deposit a layer of transparent anode 40 by sputtering, vapor deposition, spin coating and other methods.

[0043] The qua...

Embodiment 3

[0052] The method for preparing a light-emitting diode comprising a graphene / quantum dot light-emitting layer in this embodiment is:

[0053] 1) Deposit a layer of transparent anode 11 on the substrate 101 by sputtering, evaporation, spin coating and other methods;

[0054] 2) Dissolving the graphene / quantum dot composite material and the hole transport layer material triphenyldiamine in an organic solvent such as toluene, and coating it on the surface of the transparent anode 11 by spin coating or other methods;

[0055] 3) removing the solvent by heating to form the hole transport layer 21 and the graphene / quantum dot light-emitting layer 60 covering the hole transport layer 21;

[0056] 4) Depositing an electron transport layer 31 by sputtering, evaporation, spin coating and other methods;

[0057] 5) Deposit a layer of metal cathode 41 by sputtering, vapor deposition, spin coating and other methods.

[0058] In the preparation of the hole transport layer (electron transp...

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Abstract

The invention relates to a light-emitting diode. A light-emitting layer of the light-emitting diode is made of graphene / quantum dot composite materials. The invention further provides a preparation method for the light-emitting diode. The quantum dot graphene light-emitting diode is compact in distribution of quantum dot monolayer and higher in light-emitting efficiency.

Description

technical field [0001] The invention relates to a light emitting diode and a preparation method thereof. Background technique [0002] Graphene is a two-dimensional crystal composed of carbon atoms arranged in a honeycomb shape. Due to its quantum transport properties, high conductivity, mobility, and transmittance, graphene and its related devices have become a research hotspot in the fields of physics, chemistry, biology, and material science. So far, people have prepared a variety of devices with graphene as the basic functional unit, wrapping field-effect transistors, solar cells, nanogenerators, sensors, etc. [0003] Quantum dots (QDs for short) are semiconductor nanocrystals with a radius smaller than or close to the exciton Bohr radius. Appearance is just like a very small dot. Since the de Broglie wavelength, coherence wavelength and exciton Bohr radius of quantum dots are comparable to those of electrons, electrons are confined in nanometer space, electron trans...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/15H10K50/171
Inventor 张锋戴天明姚琪
Owner BOE TECH GRP CO LTD
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