Preparation method of P-type zinc oxide micro/nano fibers

Abstract

The invention belongs to the technical field of preparation of inorganic micro/nano fiber materials, and particularly relates to a preparation method of P-type zinc oxide micro/nano fibers, which comprises the steps of preparation of spinning precursor solution, electric spinning of micro/nano fibers and high-temperature sintering. The method specifically comprises the following steps: respectively preparing a polyvinylpyrrolidone ethanol solution and a lanthanum nitrate or cerium nitrate solution, and evenly mixing the two solutions to obtain a spinning precursor solution; using an aluminum foil as a collector electrode, putting a square silicon wafer with a silicon oxide insulating layer on the surface onto the aluminum foil, using the prepared precursor solution as the spinning solution, electrically spinning the micro/nano fibers by using a conventional electrostatic spinning device and method, and taking down the silicon wafer with micro/nano fibers for later use after finishing the electric spinning; and putting the silicon wafer with micro/nano fibers in a muffle furnace, and sintering at controlled temperature to obtain the P-type zinc oxide micro/nano fibers. The preparation method is easy and simple to operate, and has the advantages of reliable principle, strong practicality, high speed, high efficiency, low cost favorable product performance and environment friendliness.

Description

Technical field: [0001] The invention belongs to the technical field of preparation of inorganic micro-nano fiber materials, and relates to a preparation method of P-type zinc oxide micro-nano fibers. Quick and batch preparation. Background technique: [0002] In the current technology, the so-called micro-nanofibers refer to linear or tubular materials with two dimensions at the nanoscale on the three-dimensional spatial scale of the material, usually a material with a nanometer-scale diameter, diameter or thickness and a relatively large length , which mainly includes nanowires, nanowires, nanorods, nanotubes, nanoribbons and nanocables, etc. Because the diameter of nanofibers is reduced to the nanometer level and the specific surface area is large, its surface energy and activity are greatly enhanced, resulting in Small size effect, surface or interface effect, quantum size effect and macroscopic quantum tunneling effect are introduced, so that it exhibits a series of sp...

AI Technical Summary

Problems solved by technology

[0003] However, the semiconductor characteristic of zinc oxide in the intrinsic state is N-type, and its N-type semiconductor performance can be adjusted by using Group III elements such as aluminum, gallium, indium, etc., or halogen elements such as chlorine and iodine; to make zinc oxide P-type Semiconductors need to be doped by acceptors, and the available additives include alkali metal elements such as lithium, sodium, and potassium, group V elements such as nitrogen, phosphorus, and arsenic, and metal elements such as copper and silver. Multiple intrinsic donor defects will have a highly self-compensating effect on acceptor doping, and the solid solubility of acceptor impurities is very low, making it difficult to achieve P-type transition, resulting in the inability to manufacture the core of semiconductor devices - zinc oxide P-N junction structure, Therefore, the development and application of ZnO-based optoelectronic devices are greatly limited.

In the current research, the Chinese patent (application number: CN200610119424.5) uses the electromagnetic field confined inductive coupling enhanced vapor deposition system to obtain a nitrogen-doped P-type zinc oxide film, but the preparation technology of this method is too complicated; the application number is CN201110160741 The .2 Chinese patent obtains a nitrogen-doped P-type zinc oxide film by magnetron sputtering, using metal zinc as the target material, argon as the sputtering gas, and oxygen and nitrogen as the reaction gases. No heat treatment is required after magnetron sputtering , the method is simple, and the film quality is good, but it is only suitable for the preparation of film materials; Chinese patent (application number: CN200810050450.6) uses a certain molar percentage of zinc oxide and antimony mixed powder as raw material, and is prepared by hot pressing sintering method Antimony-doped P-type zinc oxide polycrystalline material, but this method requires higher temperature and higher pressure, and is only suitable for the preparation of larger volume materials; Chinese patent (application number: CN200910024218.X), using plasma-assisted laser molecular Beam epitaxy equipment adopts two-step epitaxy to generate phosphorus-doped P-type zinc oxide film, which successfully realizes the P-type conductivity type conversion of the original film, but the preparation process is complicated, and all of them are P-type zinc oxide film materials or bulk materials. Therefore, it is of good social significance and practical value to seek to design a simple, fast and mass-producible P-type zinc oxide micro-nanofiber preparation method

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